The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a semiconductor substrate having sidewalls that form one or more trenches. The one or more trenches are disposed along opposing sides of a photodiode and vertically extend from an upper surface of the semiconductor substrate to within the semiconductor substrate. A doped region is arranged along the upper surface of the semiconductor substrate and along opposing sides of the photodiode. A first dielectric lines the sidewalls of the semiconductor substrate and the upper surface of the semiconductor substrate. A second dielectric lines sidewalls and an upper surface of the first dielectric. The doped region has a width laterally between a side of the photodiode and a side of the first dielectric. The width of the doped region varies at different heights along the side of the photodiode.

The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensor die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer.

An imaging device according to an embodiment of the present disclosure includes a photoelectric conversion section provided in a semiconductor substrate, a charge holding section that is provided as being laminated over the photoelectric conversion section in a thickness direction of the semiconductor substrate and holds a charge photoelectrically converted by the photoelectric conversion section, a horizontal light shielding film that is provided between the photoelectric conversion section and the charge holding section and extends in an in-plane direction of the semiconductor substrate, and a plurality of vertical gate electrodes that passes through an identical opening provided in the horizontal light shielding film and extends to the photoelectric conversion section in the thickness direction of the semiconductor substrate.

An image sensor includes a first semiconductor substrate provided with a pixel, including a photoelectric conversion unit that photoelectrically converts incident light to generate an electric charge, an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit, and a transfer unit that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit, and a second semiconductor substrate provided with a supply unit for the pixel, the supply unit supplying the transfer unit with a transfer signal to transfer the electric charge from the photoelectric conversion unit to the accumulation unit.

Light-sensor array systems for capturing multiple-color images and light-fields using array of wavelength-selective optoelectronic elements (rather than wider-range photosensors prefaced with visible-band wavelength-selective optical elements such as color selective filters) as light-field or image sensors are presented. The light-sensor array can be one or more of transparent, bendable, and implemented on a curved surface. In some embodiments, the wavelength-selective light-sensing opto-electronic elements are arranged in a stacked array. In some embodiments, more than three wavelength-selective ranges can be employed in each light-sensing pixel. The invention can be used to implement one or more of a lensless imaging light-field camera, tactile gesture user interface, and/or proximate gesture user interface. In some embodiments, the light-sensor array system can be configured to emit light of one or more colors, and thus can additionally serve as an image display. In some embodiments, the wavelength-selective light-sensing opto-electronic elements are co-optimized for light sensing and emission.

An imaging device which does not include a color filter and does not need arithmetic processing using an external processing circuit is provided. A first circuit includes a first photoelectric conversion element, a first transistor, and a second transistor; a second circuit includes a second photoelectric conversion element, a third transistor, and a fourth transistor; a third circuit includes a fifth transistor, a sixth transistor, a seventh transistor, and a second capacitor; the spectroscopic element is provided over the first photoelectric conversion element or the second photoelectric conversion element; and the first circuit and the second circuit is connected to the third circuit through a first capacitor.

A sensor includes a plurality of image sensors, wherein each image sensor of the plurality of image sensors is configured to detect a first spectrum of light. The sensor further includes a depth sensing pixel bonded to each image sensor of the plurality of image sensors, wherein the depth sensing pixel is configured to detect a second spectrum of light different from the first spectrum.

The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.

In an image sensor, if a pixel for focusing has a structure having a light-shielding layer for performing pupil division, between the micro lens and the photoelectric conversion unit, the pixel may be configured such that the focal position of the micro lens is positioned further on the micro lens side than the light-shielding layer, and the distance from the focal position of the micro lens to the light-shielding layer is greater than 0 and less than nF, where n is the refractive index at the focal position of the micro lens, F is the aperture value of the micro lens, and is the diffraction limit of the micro lens. This enables variation in the pupil intensity distribution of the pixel for focusing due to positional production tolerance of components to be suppressed.

An electronic device may include: a display panel comprising a pixel flexible substrate, a driving circuit, a display medium formed from an organic light-emitting material, and a plurality of shielding units; and a plurality of micro photoelectric units adjacent to a protection layer and away from the display panel. The plurality of micro-photoelectric units may comprise respective micro-photoelectric elements, and at least one of the micro-photoelectric elements may be, or may include, a sensor element. The protection layer may serve to protect the plurality of micro-photoelectric units while being located at one side of the plurality of micro-photoelectric units. Each of the plurality of micro photoelectric units may be configured to emit light toward an object, and to receive the light reflected, scattered, refracted, or diffracted by, or penetrating through, the object, or receive a signal generated from the light after being reflected, scattered, refracted, or diffracted by, or penetrating through, the object.