An imaging system detector array (112) includes a detector tile (116). The detector tile includes a photosensor array (202), including a plurality of photosensor pixels (204). The detector tile further includes a scintillator array (212) optically coupled to the photosensor array. The detector tile further includes an electronics layer or ASIC on a substrate (214) that is electrically coupled to the photosensor array. The electronics layer includes a plurality of individual and divisible processing regions (302). Each processing region including a predetermined number of channels corresponding to a sub-set of the plurality of photosensor pixels. The processing regions are in electrical communication with each other. Each processing region includes its own electrical reference and bias circuitry (802, 804).

Provided are a composition of which dispersibility of particles including a pyrrolopyrrole coloring agent is satisfactory, a method of manufacturing a composition, a curable composition, a cured film using a curable composition, a near-infrared cut filter, a solid-state imaging device, an infrared sensor, and a camera module. The composition includes particles including a coloring agent represented by Formula (1), in which an average secondary particle diameter of the particles is 500 nm or less. R.sup.1a and R.sup.1b each independently represent an alkyl group, an aryl group, or a heteroaryl group, R.sup.2 and R.sup.3 each independently represent a hydrogen atom or a substituent, R.sup.2 and R.sup.3 may be bonded to each other to form a ring, R.sup.4's each independently represent a hydrogen atom, an alkyl group, an aryl group, a heteroaryl group, BR.sup.4AR.sup.4B, or a metal atom, R.sup.4's may form a covalent bond or a coordinate bond with at least one selected form R.sup.1a, R.sup.1b, or R.sup.3, and R.sup.4A and R.sup.4B each independently represent a hydrogen atom or a substituent.

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An imaging unit includes: a semiconductor package having an image sensor and having a first connection electrode on a back face thereof; a first multi-layer substrate having layered substrates and having second and third connection electrodes respectively on front and back faces of the first multi-layer substrate, the second connection electrode being configured to be connected to the first connection electrode; a second multi-layer substrate having layered substrates, the second multi-layer substrate being configured to be connected to the back face of the first multi-layer substrate such that a layer direction of the second multi-layer substrate is perpendicular to a layer direction of the first multi-layer substrate; an electronic component mounted inside the first multi-layer substrate; and cables configured to be connected to the second multi-layer substrate. The first and second multi-layer substrates lie within a projected plane in an optical axis direction of the semiconductor package.

The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

To provide a memory cell for storing multilevel data that is less likely to be affected by variations in characteristics of transistors and that is capable of easily writing multilevel data in a short time and accurately reading it out. In writing, a current corresponding to multilevel data is supplied to the transistor in the memory cell and stored as the gate-drain voltage of the transistor in the memory cell. In reading, a current is supplied to the transistor in the transistor with the stored gate-drain voltage, and the multilevel data is obtained from the voltage supplied to generate a current that is equal to the current.

A detector module for detecting photons includes a detector formed from a semiconductive material, the detector having a first surface, an opposing second surface, and a plurality of sidewalls extending between the first and second surfaces, and a guard band coupled to the sidewalls, the guard band having a length that extends about a circumference of the detector, the guard band having a width that is greater than a thickness of the detector such that an upper rim segment of the guard band projects beyond the first surface of the detector, the upper rim segment being folded over a peripheral region of the first surface along the circumference of the detector, the guard band configured to reduce recombinations proximate to the edges of the detector.

To provide an organic photoelectric conversion element, imaging device, and optical sensor having low dark currents, and a method of manufacturing a photoelectric conversion element. Provided is a photoelectric conversion element, including: a first electrode; an organic photoelectric conversion layer disposed in a layer upper than the first electrode, the organic photoelectric conversion layer including one or two or more organic semiconductor materials; a buffer layer disposed in a layer upper than the organic photoelectric conversion layer, the buffer layer including an amorphous inorganic material and having an energy level of 7.7 to 8.0 eV and a difference in a HOMO energy level from the organic photoelectric conversion layer of 2 eV or more; and a second electrode disposed in a layer upper than the buffer layer.

The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate 12 and multiple photoelectric converters 40 that are formed on the substrate 12, an insulating film 21 forms an embedded element separating unit 19. The element separating unit 19 is configured of an insulating film 20 having a fixed charge that is formed so as to coat the inner wall face of a groove portion 30, within the groove portion 30 which is formed in the depth direction from the light input side of the substrate 12.

An aim of the present invention is to provide a technology that increases the aperture ratio of an imaging panel. The imaging panel captures scintillation light, which are X-rays that have passed through a specimen and been converted by a scintillator. The imaging panel includes a plurality of gate lines and a plurality of data lines. The imaging panel includes, in each of the pixels, a conversion element that converts scintillation light to electric charge, a thin film transistor connected to the gate line, data line, and conversion element, and a metal wiring line connecting to the conversion element and supplying a bias voltage to the conversion element. The metal wiring line is positioned generally parallel to the data line and is closer to the data line that connects to the thin film transistor than approximately the center in the extension direction of the gate line of the conversion element.

A photodetection device according to one embodiment of the present disclosure includes: a semiconductor substrate having a first surface and a second surface that are opposed to each other and including a plurality of pixels arranged in an array in an in-plane direction; a first trench extending between the first surface and the second surface in an approximate middle of each of the plurality of pixels; a first semiconductor layer of a first conductivity type, the first semiconductor layer being provided in each of the plurality of pixels and extending between the first surface and the second surface; and a second semiconductor layer of a second conductivity type that is opposite to the first conductivity type, the second semiconductor layer being provided in each of the plurality of pixels and extending between the first surface and the second surface. When a reverse bias voltage is applied, a high electric field region is formed between the first semiconductor layer and the second semiconductor layer throughout between the first surface and the second surface.