A wiring structure includes a structure body including a pattern, a first conductive layer above the structure body, the first conductive layer having a shape, the shape crossing an edge of a pattern of the structure body and reflecting a step of the edge of the pattern of the structure body, a first insulating layer above the first conductive layer, the first insulating layer having a first opening overlapping the edge of the pattern of the structure body in a plane view, and r is arranged with a second opening in a region overlapping the semiconductor layer in a plane view, a second conductive layer in the first opening, the second conductive layer being connected to the first conductive layer.

A memory device includes a plurality of memory cells. A first memory cell of the plurality of memory cells includes a first write transistor includes a first write gate, a first write source, and a first write drain. A first read transistor includes first read gate, a first read source, a first read drain, and a first body region separating the first read source from the first read drain. The first read source is coupled to the first write source. A first capacitor has a first upper capacitor plate coupled to the first write drain and a first lower capacitor plate coupled to the first body region of the first read transistor.

Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor including a first active layer including silicon, a first gate, a first source and a first drain; a second transistor including a second active layer including an oxide semiconductor, a second gate located on a side of the second active layer facing away from the base substrate, a second source and a second drain; a first insulating layer including an inorganic material; and a planarization layer including an organic material. The first insulating layer includes a first insulating sublayer and a second insulating sublayer. The second insulating sublayer is located on a side of the first insulating sublayer facing away from the base substrate, and a compactness of the second insulating sublayer is greater than a compactness of the first insulating sublayer.

A display device with high display quality is provided. A display device with low power consumption is provided. In the display device, a first transistor, a second transistor, a first conductive layer, and a light-emitting diode package are included in a pixel. The light-emitting diode package includes a first light-emitting diode, a second light-emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer. The first light-emitting diode includes a first electrode and a second electrode. The second light-emitting diode includes a third electrode and a fourth electrode. One of a source and a drain of the first transistor is electrically connected to the first electrode through the second conductive layer.

10 One of a source and a drain of the second transistor is electrically connected to the third electrode through the third conductive layer. The first conductive layer is electrically connected to each of the second electrode and the fourth electrode through the fourth conductive layer. A constant potential is supplied to the first conductive layer.

An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.

Provided is a display apparatus including: a substrate in which a display element is arranged; a first thin film transistor arranged in the display area and including a first semiconductor layer including silicon and a first control electrode insulated from the first semiconductor layer; a first interlayer insulating layer covering the first control electrode; a second thin film transistor arranged on the first interlayer insulating layer and including a second semiconductor layer including an oxide semiconductor and a second control electrode insulated from the second semiconductor layer; a second interlayer insulating layer covering the second control electrode; a node connection line arranged on the second interlayer insulating layer and connected to the first control electrode via a first contact hole; a first planarization layer covering the node connection line; and a shielding electrode arranged on the first planarization layer to overlap the node connection line.

An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 510.sup.19 atoms/cm.sup.3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

According to some embodiments of the present disclosure, a display device includes an active pattern including a metal oxide, a gate electrode overlapping the active pattern, a first capacitor electrode spaced apart from the active pattern and including a conductive oxide, and a second capacitor electrode on the first capacitor electrode.

The present disclosure provides a thin film transistor, an electronic device, a manufacturing method of electronic device, and display device. The thin film transistor includes a driving circuit layer including a first metal layer, a first insulating layer, a second metal layer, a second insulating layer, and a third metal layer stacked together; wherein one of the first, the second, and the third metal layer is configured to be a gate, and the another two are configured to be a source and a drain; a gate insulating layer disposed on a sidewall of the driving circuit layer, and a semiconductor layer disposed on a surface of the gate insulating layer.