An image sensor includes a first semiconductor chip including a first semiconductor substrate including a plurality of pixels and a first wiring structure having a first bonding pad; a second semiconductor chip including a second semiconductor substrate having pixel signal generator circuits, a second wiring structure on the second semiconductor substrate and having an upper bonding pad bonded to the first bonding pad, a back side insulating layer on a lower surface of the second semiconductor substrate and including a shielding metal pattern buried therein, and a conductive through-via penetrating the back side insulating layer and the first semiconductor substrate, and a third semiconductor chip including a bonding layer having a lower bonding pad connected to the conductive through via, a third semiconductor substrate including logic devices, and a third wiring structure having a third bonding pad bonded to the lower bonding pad.

A method of manufacturing a connection structure, connection structure, film structure, and a method of manufacturing a film structure capable of mounting an electronic component having a plurality of terminal rows on a mounting surface by using existing equipment, including: a pasting step of pasting, from a film structure including a tape-shaped base material and a connection film formed thereon, connection films having a unit region of a predetermined length in the length direction of the base material and a predetermined width in the width direction to a first or second electronic component having a plurality of terminal rows; and a connecting step of connecting terminals of the first and second electronic components through the connection films, wherein the film structure includes, in the unit region, in addition to portions corresponding to the plurality of terminal rows, a non-pasting portion in which the connection film is not pasted.

Disclosed in the present application are a camera module, and a photosensitive assembly and a manufacturing method therefor. The photosensitive assembly comprises a circuit board, a photosensitive chip electrically connected to the circuit board, and a shaping member provided on the circuit board. A lower surface of the photosensitive chip is attached to the shaping member to form an accommodating space with the shaping member and the circuit board. The accommodating space is configured so that the photosensitive chip is bent downward during a process of assembling the photosensitive assembly. In this way, the photosensitive chip is bent into a shape adapted to the actual focal plane during the assembly process, so as to improve the imaging quality.

A semiconductor package is disclosed. The package includes a package substrate having top and bottom major package substrate surfaces, the top major package surface including a die region. A die having first and second major die surfaces is attached onto the die region. The second major die surface is attached to the die region. The first major die surface includes a sensor region and a cover adhesive region surrounding the sensor region. The package also includes applying a cover adhesive to the cover adhesive region on the first major die surface. A protective cover with first and second major cover surfaces and side surfaces is attached to the die using the cover adhesive. The second major cover surface contacts the cover adhesive. The protective cover covers the sensor region. The protective cover includes a recessed structure on the second major cover surface. The recessed structure is located above die bond pads on the die to create an elevated space over peak portions of wire bonds on the die bond pads. An encapsulant is disposed on the package substrate to cover exposed portions of the package substrate, die and bond wires and side surfaces of the protective cover, while leaving the first major cover surface exposed.

An intermediate connection member includes a first insulating substrate portion, a second insulating substrate portion, an insulating layer portion provided between the first insulating substrate portion and the second insulating substrate portion and formed from a different material from the first insulating substrate portion and the second insulating substrate portion, a plurality of first wiring portions provided between the first insulating substrate portion and the insulating layer portion so as to extend in a first direction such that both end portions of the plurality of first wiring portions in the first direction are exposed to an outside, and a plurality of second wiring portions provided between the second insulating substrate portion and the insulating layer portion so as to extend in the first direction such that both end portions of the plurality of second wiring portions in the first direction are exposed to the outside.

An image sensor includes a substrate region having a photoelectric conversion region and a floating diffusion region therein. The floating diffusion region is configured to receive charges generated in the photoelectric conversion region in response to light incident the photoelectric conversion region. First and second horizontal conductive lines are provided that extend on the substrate region, but at different heights relative to a surface of the substrate region. The first horizontal conductive line is electrically connected to the floating diffusion region and has a thickness smaller than a thickness of the second horizontal conductive line. In addition, the first horizontal conductive line extends closer to the substrate region than the second horizontal conductive line.

In general, the disclosure describes sensor including an intermediate band layer including a plurality of dopant particles, wherein the intermediate band layer is configured to absorb a portion of incident electromagnetic radiation comprising a first range of wavelengths greater than 1100 nm and form optically induced minority carriers. The sensor also includes a photo-sensitive silicon substrate configured to detect the electromagnetic radiation comprising a second range of wavelengths less than or equal to 1100 nm.

Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an acitve region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

A curved image sensor chip has a first side and a second side opposite the first side. The second side includes light sensors configured to generate electrical signals in response to receiving light. A substrate is in contact with the first side of the curved image sensor chip and is configured to increase in volume so as to apply a bending force to form the curved image sensor chip.

Semiconductor devices, image sensors, and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a high dielectric constant (k) insulating material disposed over a workpiece, the high k insulating material having a dielectric constant of greater than about 3.9. A barrier layer is disposed over the high k insulating material. A buffer oxide layer including a porous oxide film is disposed between the high k insulating material and the barrier layer. The porous oxide film has a first porosity, and the barrier layer or the high k insulating material has a second porosity. The first porosity is greater than the second porosity.