An EL display apparatus according to the present invention includes EL device adapted to emit light at a luminance corresponding to a current fed thereto. A source driver outputs a current higher than a current corresponding to an image signal to the EL device through a source signal line. This operation charges/discharges a parasitic capacitance present in the source signal line. A transistor formed between the EL device and the source driver operates so that the EL device is fed with the current for only a part of a one-frame period. As a result, the El device emits light for only the part of the period.

The present invention provides a TFT substrate structure and a manufacturing method thereof. In the manufacturing method of a TFT substrate structure according to present invention, a graphene layer is formed on a semiconductor layer and after the formation of a second metal layer, the second metal layer is used as a shielding mask to conduct injection of fluoride ions into the graphene layer to form a modified area in a portion of the graphene layer that is located on and corresponds to a channel zone of the semiconductor layer, wherein the modified area of the graphene layer shows a property of electrical insulation and a property of blocking moisture/oxygen so as to provide protection to the channel zone; portions of the graphene layer that are located under source and drain electrodes are not doped with ions and preserves the excellent electrical conduction property of graphene and thus electrical connection between the source and drain electrodes and the semiconductor layer can be achieved without formation of a via in the graphene layer, making a TFT device so manufactured showing excellent I-V (current-voltage) output characteristics and stability, saving one mask operation process, shortening the manufacturing time, and lowering down the manufacturing cost.

The present invention provides an array substrate and a manufacturing method thereof. The manufacturing method of the array substrate according to the present invention forms a gate electrode in the same metal layer with source and drain electrodes and divides a common electrode layer that is conventionally in the form of an entire surface into two portions, of which one serves as a common electrode, while the other portion feeds an input of a gate scan signal thereby eliminating an operation of forming an interlayer insulation layer and thus reducing manufacturing cost of the operation. The array substrate of the present invention comprises a gate electrode that is formed in the same metal layer with source and drain electrodes so that no interlayer insulation layer is present between the gate electrode and the source and drain electrodes, thereby simplifying the structure and reducing the manufacturing cost of the array substrate.

An EL display apparatus according to the present invention includes an EL device adapted to emit light at a luminance corresponding to a current fed thereto. A source driver outputs a current higher than a current corresponding to an analog video signal to the EL device through a source signal line. This operation charges/discharges a parasitic capacitance present in the source signal line. A second gate driver circuit controls a transistor formed between the EL device and the source driver to operate so that the EL device is fed with the current for only a part of a one-frame period. As a result, the El device emits light for only the part of the period.

A thin-film transistor (TFT) switch includes a gate, a drain, a source, a semiconductor layer, and a fourth electrode. The drain is connected to a first signal. The gate is connected to a control signal to control the switch on or off. The source outputs the first signal when the switch turns on. The fourth electrode and the gate are respectively located at two sides of the semiconductor layer. The fourth electrode is conductive and is selectively coupled to different voltage levels, thereby reducing leakage current in a channel to improve switch characteristic when the switch turns off.

A thin-film transistor (TFT) switch includes a gate, a drain, a source, a semiconductor layer, and a fourth electrode. The drain is connected to a first signal. The gate is connected to a control signal to control the switch on or off. The source outputs the first signal when the switch turns on. The fourth electrode and the gate are respectively located at two sides of the semiconductor layer. The fourth electrode is conductive and is selectively coupled to different voltage levels, thereby reducing leakage current in a channel to improve switch characteristic when the switch turns off.

Embodiments of the present disclosure relate to the field of display technologies, and particularly, to an array substrate and methods of manufacturing and driving the same. With the embodiments of the present disclosure, undesirable phenomenon, e.g. color mixing and so on is avoid in a display device having the array substrate while simplifying the manufacture process of the array substrate. The array substrate comprises a substrate, thin-film transistors, pixel electrodes and a common electrode on the substrate, a plurality of leading wires and a color filter layer; wherein the common electrode comprises a plurality of common electrode blocks reusable as self-capacitance electrodes, and each of the leading wires has one end electrically connected to one of the common electrode blocks and the other end electrically connected to a touch integrated circuit. The array substrate according to the embodiments of the present disclosure is used in the display device.

To suppress change in electric characteristics and improve reliability of a semiconductor device including a transistor formed using an oxide semiconductor. A semiconductor device includes a transistor including a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, and a pair of electrodes. The gate electrode and the oxide semiconductor film overlap with each other. The oxide semiconductor film is located between the first insulating film and the second insulating film and in contact with the pair of electrodes. The first insulating film is located between the gate electrode and the oxide semiconductor film. An etching rate of a region of at least one of the first insulating film and the second insulating film is higher than 8 nm/min when etching is performed using a hydrofluoric acid.

A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region and a second region; forming a gate layer on the substrate; forming a first gate dielectric layer on the gate layer; forming a first channel layer on the first region and a second channel layer on the second region; and forming a first source/drain on the first channel layer and a second source/drain on the second channel layer.