A light-emitting device includes a substrate; a light-emitting element mounted on the substrate; a first light-transmissive member bonded to an upper surface of the light-emitting element via an adhesive; and a second light-transmissive member placed on an upper surface of the first light-transmissive member. In a plan view of the light-emitting device, a peripheral edge of a lower surface of the first light-transmissive member is positioned more inward than a peripheral edge of the upper surface of the light-emitting element. The adhesive extends from the upper surface of the light-emitting element to a lower surface of the second light-transmissive member, the adhesive covers a side surface of the first light-transmissive member, and the adhesive is separated from the substrate.

A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween. The first electrode is provided between the first light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer and the conductive substrate. The second electrode is provided between the second light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer. The first interconnection electrically connects the second semiconductor layer of the first light emitting body and the second electrode. The first interconnection includes a first portion extending over the first and second light emitting bodies and a second portion extending into the second light emitting body.

A pixel comprises three adjacent sub-pixels, formed by respective stacks of semi-conducting layers wherein: each sub-pixel comprises a first active layer, adapted for emitting a light at a first wavelength when an electric current passes through it; another sub-pixel comprises a second active layer, adapted for emitting a light at a second wavelength greater than the first wavelength; another sub-pixel comprises a third active layer, adapted for emitting a light at a third wavelength greater than the first wavelength and different from the second wavelength; at least one from among the second and third active layers being adapted for emitting light when it is excited by the light at the first wavelength emitted by the first active layer of the same sub-pixel. Semi-conducting structure and methods for the fabrication of such a pixel are provided.

A silicone-based encapsulating material composition contains a bifunctional the silicone resin (A), a multifunctional thermosetting silicone resin having a hydroxyl group (B), and a curing catalyst (C). In the composition, a weight-average molecular weight of the component (A) is 300 to 4,500, a mass ratio of the component (B) relative to a total mass of the component (A) and the component (B) is 0.5% by mass or more and less than 100% by mass, an average functional number of the component (B) is 2.5 to 3.5, and the repeating units constituting the component (B) which are trifunctional account for 50% by mass or more relative to a total mass of the component (B). A visible light transmittance measured at an optical path length of 1 cm and a wavelength of 600 nm is 70% or higher.

A light-emitting device includes a plurality of light-emitting elements, a phosphorescent phosphor layer including a green phosphorescent phosphor that emits green light and has an afterglow property, and a sealing resin that disperses the green phosphorescent phosphor. The light-emitting device includes a red phosphor that emits red light, a sealing resin that disperses the red phosphor, and a red phosphor layer that contains only a red phosphor as a phosphor. The phosphorescent phosphor layer and the red phosphor layer are disposed apart from each other, and the light-emitting device emits white light while electric current is supplied to the plurality of light-emitting elements, and emits green light after ending the supply of the electric current to the light-emitting elements.

A light emitting diode (LED) includes a semiconductor material with an active region. The active region is disposed in the semiconductor material to produce light in response to a voltage applied across the semiconductor material. The active region includes a wide bandgap region disposed to inhibit charge transfer from a central region of the LED to the lateral edges of the LED. The active region also includes a narrow bandgap region disposed in the central region with the wide bandgap region disposed about the narrow bandgap region, and the narrow bandgap region has a narrower bandgap than the wide bandgap region.

A light-emitting element includes a light-emitting layer, and an optical function film. The light-emitting layer is configured to include a first plane with a first electrode, a second plane with a second electrode, and a circumferential plane connecting the first and second planes, the second plane being opposing to the first plane, and the light-emitting layer being made of a semiconductor. The optical function film is configured to include a reflection layer being able to reflect light coming from the light-emitting layer, the reflection layer being provided with first and second regions, the first region covering the second plane and the circumferential plane, the second region protruding from the first region to an outside of the light-emitting layer to expose an end plane thereof.

A method for manufacturing a micro LED display is provided. The method includes providing a plurality of LED elements on a first substrate, transferring, using a magnetic holder or a vacuum holder, at least two of the plurality of LED elements of the same primary color from the first substrate to a second substrate, performing the steps of the providing and the transferring with respect to three primary colors, forming an array of RGB LED units on the second substrate, each of the array of RGB LED units including a red LED element, a green LED element, and a blue LED element, interposing the array of RGB LED units between the second substrate and an LED driver wafer, detaching the second substrate from the array of RGB LED units, and interposing the array of RGB LED units between the LED driver wafer and a cover.

An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 510.sup.19 atoms/cm.sup.3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

A display panel and manufacturing method thereof are provided. The display panel includes a first display area and a second display area surrounding the first display area. The display panel includes: a first substrate, including base islands; light-emitting elements arranged on the first substrate; and a second substrate set on the light-emitting elements. The second substrate includes grooves arranged in the first display area. These grooves can increase the elasticity and stretchability of the second substrate in the first display area, making a stretch film in this area more easily stretchable and deformable, reducing stress concentration. This design aims to prevent excessive force and deformation in a middle part when the display panel is stretched upwards, thus minimizing stress concentration in this area. By allowing a smoother stretch in the first display area, it prevents issues of uneven display effects and abnormal screen problems.