Provided is a method of manufacturing a display, the method including a first operation of transferring a plurality of micro light emitting diodes (LEDs) to a plurality of wells of an interposer through a fluidic self assembly (FSA) process, a second operation of aligning a driving substrate on the interposer, a third operation of injecting a penetrating solvent between the interposer and the driving substrate, such that the penetrating solvent penetrates between the plurality of micro LEDs and the plurality of wells, and a fourth operation of transferring the plurality of micro LEDs to the driving substrate by radiating light to the interposer to vaporize the penetrating solvent.

A display panel includes a first substrate. The first substrate includes multiple sub-pixel areas arranged in an array. At least one of the multiple sub-pixel areas includes a main bonding pad and a backup bonding pad which are disposed on the first substrate; and a micro light-emitting diode electrically connected to the main bonding pad or the backup bonding pad. The main bonding pad and the backup bonding pad are in a first symmetric manner about a first symmetric reference object. The sub-pixel area is in a second symmetric manner about a second symmetric reference object. The first symmetric manner is the same as the second symmetric manner. The distance between the vertical projection of the first symmetric reference object on the first substrate and the vertical projection of the second symmetric reference object on the first substrate is S1, and S110 m.

A light-emitting device including a semiconductor stack generating a first light, and a filter formed on the semiconductor stack, including a first surface facing the semiconductor stack and a second surface opposite to the first surface. The filter includes pairs of layers with different refractive indexes alternately stacked. A portion of the first light is transmitted by the filter. The light emitting device emits a second light including the portion of the first light, and the second light includes a first directional part with a first FWHM and a second directional part with a second FWHM smaller than the first FWHM. The first directional part has a first angle with a normal direction of the second surface in a range of 45-90 degrees and the second directional part having a second angle with the normal direction of the second surface in a range of 0-30 degrees.

An electronic device including at least one light emitting chip, a circuit chip, and a base is provided. The base having a first surface, a second surface opposite to the first surface and at least one conductive via extending from the first surface to the second surface, the base is disposed between the at least one light emitting chip and the circuit chip, and the base is greater than one of the at least one light emitting chip in thickness. The circuit chip is electrically connected to the at least one light emitting chip through the at least one conductive via and configured to control the at least one light emitting chip.

A micro LED includes a bonding layer; an N type semiconductor layer formed on the bonding layer; a light emitting layer formed on the N type semiconductor layer; and a P type semiconductor layer formed on the light emitting layer. A resonance cavity structure is formed by the N type semiconductor layer and the P type semiconductor layer.

A display panel includes a first substrate. The first substrate includes multiple sub-pixel areas arranged in an array. At least one of the multiple sub-pixel areas includes a main bonding pad and a backup bonding pad which are disposed on the first substrate; and a micro light-emitting diode electrically connected to the main bonding pad or the backup bonding pad. The main bonding pad and the backup bonding pad are in a first symmetric manner about a first symmetric reference object. The sub-pixel area is in a second symmetric manner about a second symmetric reference object. The first symmetric manner is the same as the second symmetric manner. The distance between the vertical projection of the first symmetric reference object on the first substrate and the vertical projection of the second symmetric reference object on the first substrate is S1, and S110 m.

A display panel includes a first substrate. The first substrate includes multiple sub-pixel areas arranged in an array. At least one of the multiple sub-pixel areas includes a main bonding pad and a backup bonding pad which are disposed on the first substrate; and a micro light-emitting diode electrically connected to the main bonding pad or the backup bonding pad. The main bonding pad and the backup bonding pad are in a first symmetric manner about a first symmetric reference object. The sub-pixel area is in a second symmetric manner about a second symmetric reference object. The first symmetric manner is the same as the second symmetric manner. The distance between the vertical projection of the first symmetric reference object on the first substrate and the vertical projection of the second symmetric reference object on the first substrate is S1, and S110 m.

An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a carrier, a multi-pixel semiconductor chip that emits electromagnetic radiation during operation, wherein the semiconductor chip is arranged on the carrier, and wherein the semiconductor chip has a plurality of individually activatable pixels capable of generating primary radiation and a wavelength conversion element for at least partially converting the primary radiation emitted from the semiconductor chip into electromagnetic secondary radiation, wherein an active zone of the multi-pixel semiconductor chip extends continuously over the plurality of pixels, and wherein the wavelength conversion element is implemented in one piece.

A light-emitting device includes: one or more first light-emitting elements each having a peak wavelength in a range from 430 nm to less than 490 nm; a second light-emitting element having a peak wavelength Y in a range from 490 nm to less than a wavelength X; a third light-emitting element having a peak wavelength Z in a range from more than the wavelength X to 570 nm; and a phosphor or a fourth light-emitting element having a peak wavelength in a range from 580 nm to 680 nm. At least one of the second and third light-emitting elements is connected to at least one of the first light-emitting elements in series. The wavelength X is in a range from more than 490 nm to less than 570 nm with an absolute value of difference between |XY| and |XZ| being 10 nm or less.

A light emitting apparatus includes a package and at least one light emitting device. The package has a package bottom surface and defining a recessed portion having a recessed portion bottom surface. The package includes a first leadframe, a second leadframe, and a resin portion. The first leadframe has a first leadframe upper surface and a first leadframe bottom surface. The second leadframe has a second leadframe upper surface and a second leadframe bottom surface. The first leadframe has a first leadframe main portion and a first leadframe extension portion. A first recessed part is formed at the first leadframe bottom surface and embedded with the resin portion. The first leadframe forms a second recessed part at an upper surface thereof other than an area approximately above the first recessed part, while the second recessed part is not provided on the area approximately above the first recessed part.