A display device includes a pixel, which includes at least one first light emitting element disposed between a first electrode and a second electrode; at least one second light emitting element disposed between a second electrode and a third electrode; at least one third light emitting element disposed between a third electrode and a fourth electrode; a first intermediate electrode disposed on the second electrode and electrically connected to the at least one first light emitting element and the at least one second light emitting element; and a second intermediate electrode disposed on the fourth electrode and electrically connected to the at least one third light emitting elements. The first intermediate electrode and the second intermediate electrode are electrically connected to each other.

A light emitting element includes a first surface corresponding to an end of the light emitting element, a second surface corresponding to another end of the light emitting element, a first semiconductor layer adjacent to the first surface, the first semiconductor layer including a first type of semiconductor, a second semiconductor layer adjacent to the second surface, the second semiconductor layer including a second type of semiconductor different from the first type of semiconductor, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. An area of the first surface is larger than an area of the second surface, and a distance between the first surface and the second surface is shorter than a length defined by the first surface.

The disclosure describes various aspects of monolithic integration of different light emitting structures on a same substrate. In an aspect, a device for light generation is described having a substrate with one or more buffer layers made a material that includes GaN. The device also includes light emitting structures, which are epitaxially grown on a same surface of a top buffer layer of the substrate, where each light emitting structure has an active area parallel to the surface and laterally terminated, and where the active area of different light emitting structures is configured to directly generate a different color of light. The device also includes a p-doped layer disposed over the active area of each light emitting structure and made of a p-doped material that includes GaN. The device may be part of a light field display and may be connected to a backplane of the light field display.

A lighting device includes a substrate, light sources having a first light source on the substrate, a resin layer sealing the plurality of light sources on the substrate; and a light transmitting layer on the resin layer. A surface of the resin layer has an upper surface and side surfaces, and the side surfaces of the resin layer has a convex curved surface. The light transmitting layer has a first flat region on the upper surface of the resin layer and a second curved region on the side surfaces of the resin layer. The convex curved surface of the resin layer and the second curved region of the light transmitting layer overlap the first light source in a vertical direction, and a corner between two adjacent the side surfaces of the resin layer has a convex curved surface.

A display device includes: a plurality of light emitting elements on a first substrate; a second substrate facing the first substrate; a partition wall on one surface of the second substrate facing the first substrate, and including a plurality of openings; a plurality of color filters in the plurality of openings; wavelength conversion layers on the plurality of color filters, respectively, and to convert wavelengths of light emitted from the plurality of light emitting elements; and an adhesive layer adhering the first substrate and the second substrate to each other. The partition wall includes a silicon single crystal.

A COB type photoelectric device is provided. The COB type photoelectric device includes: a metallic substrate including a photoelectric element fixing area; a dam disposed on the metallic substrate and surrounding the photoelectric element fixing area; first photoelectric elements disposed on the metallic substrate and in the photoelectric element fixing area; a KSF phosphor based layer disposed on the first photoelectric elements and being not in contact with the metallic substrate; and an isolation layer disposed in the dam and covering the KSF phosphor based layer. The KSF phosphor based layer includes a KSF phosphor. The COB type photoelectric device can make full use of high luminous efficiency performance of the KSF, and improve luminous efficiency of the COB type photoelectric device while maintaining stability of the KSF.

A display device and a method for fabricating the same are provided. The display device includes a support substrate, a light-emitting chip, and a thin film transistor. The light-emitting chip is disposed on a side of the support substrate. The thin film transistor is disposed on a side of the light-emitting chip away from the support substrate. The thin film transistor is connected to the light-emitting chip.

A display device may include: a base layer including a plurality of islands, at least one first bridge configured to connect the islands in a first direction, and at least one second bridge configured to connect the islands in a second direction; and at least one pixel including a plurality of sub-pixels in the base layer. Each of the sub-pixels may include: a first electrode and a second electrode in one island of the islands and spaced from each other; a third electrode and a fourth electrode in one bridge of the at least one first bridge and the at least one second bridge and spaced from each other; at least one first light emitting element between the first electrode and the second electrode; and at least one second light emitting element between the third electrode and the fourth electrode.

The present invention provides a light emitting panel, which includes: a substrate, at least one light emitting element disposed on the substrate, and a reflective structure layer. The reflective structure layer includes a plurality of first microstructure units disposed on the substrate and distributed around the at least one light emitting element, and a plurality of second microstructure units disposed on and overlapping the first microstructure units. A spacing between adjacent first microstructure units among the first microstructure units is less than a spacing between adjacent second microstructure units among the second microstructure units.

Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride or an indium tin oxide; and the electrode layer is located on the second-type layer.