H10H29/142

Light-emitting device and display apparatus

A light-emitting device including an epitaxial layer, a support layer, an insulating layer, a first electrode pad, and a second electrode pad is provided. The epitaxial layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer, wherein the light-emitting layer is disposed on a partial area of the first type doped semiconductor layer and is between the first type doped semiconductor layer and the second type doped semiconductor layer. The support layer covers the second type doped semiconductor layer while the insulating layer covers the epitaxial layer and the support layer. The first and the second electrode pads are disposed over the insulating layer and electrically connected to the first and the second type doped semiconductor layers, respectively. The support layer extends from a first position below the first electrode pad to a second position below the second electrode pad.

μ-LED, μ-LED device, display and method for the same

The invention relates to various aspects of a -LED or a -LED array for augmented reality or lighting applications, in particular in the automotive field. The -LED is characterized by particularly small dimensions in the range of a few m.

MICRO LIGHT EMITTING DIODE STRUCTURES FORMED IN A RECESS OF A TRANSPARENT SUBSTRATE

Techniques and mechanisms for a micro-LED (or uLED) device to facilitate communication of an optical signal which is propagated via a transparent substrate structure. In an embodiment, one or more recess structures are formed in a side of a transparent substrate structure, such as a glass core of a package substrate. A uLED structure extends partially through the transparent substrate structure in a first recess structure, and is oriented to transmit or receive an optical signal via the transparent substrate. In another embodiment, the uLED structure is coupled to integrated circuitry which provides functionality to operate the uLED structure, at different times, in either one of an optical signal receiver mode or an optical signal transmitter mode.

SEMICONDUCTOR DEVICES INCORPORATING QUANTUM DOTS
20250022909 · 2025-01-16 · ·

In accordance with one or more aspects of the present disclosure, an apparatus including micro-LEDs is provided. The apparatus may include a first nanoporous structure fabricated on a first light-emitting device and a second nanoporous structure fabricated on a second light-emitting device. A first plurality quantum dots are placed in the first nanoporous structure for converting light emitted by the first light-emitting device into light of a first color. A second plurality quantum dots are placed in the second nanoporous structure for converting light emitted by the second light-emitting device into light a second color. The apparatus further includes a third light-emitting device that emits light of a third color. The apparatus further includes a conductive layer of a conductive material. The conductive layer contacts the top surfaces of the first light-emitting device, the second surface of the second light-emitting device, and the third light-emitting device.

DISPLAY APPARATUS
20250022867 · 2025-01-16 ·

A display apparatus includes a circuit board including driving circuits; and a pixel array on the circuit board and including a plurality of pixels, wherein the pixel array includes LED cells having a pillar shape and including first and second conductivity-type semiconductor layers and an active layer, wherein a width thereof is 100 m or less, and a height thereof is greater than the width; a transparent electrode on lower surfaces of the LED cells and including a cone or pyramid-shaped inclined portion; a passivation layer disposed on side surfaces of the LED cells and extending from a side surface of the LED cell to a side surface of the inclined portion of the transparent electrode.

Electronic Device Displays with Lenses and Color Filters

An electronic device may include a stereoscopic display that is configured to display three-dimensional content for a viewer. The stereoscopic display may include a lenticular lens film with lenticular lenses that extend across the length of the display and may be referred to as a lenticular display. The lenticular display may have convex curvature. The lenticular display may include a color filter layer with color filters and an opaque masking layer. The color filter layer may be interposed between the lenticular lens film and an array of display pixels for the display. The color filter layer may mitigate ghost image artifacts and reflections of ambient light. Microlenses may be included between the lenticular lens film and the array of display pixels to improve the efficiency of the display. The display may include a Fresnel lens layer. The lenticular lens film may include lenticular lenses having different shapes.

SEMICONDUCTOR STRUCTURES GROWN ON HETERO-INTERFACE WITHOUT ETCH DAMAGE
20250022910 · 2025-01-16 ·

An array of semiconductor structures is grown on a hetero-interface barrier layer by forming successive semiconductor layers within holes formed through a dielectric layer deposited above the hetero-interface barrier layer. The hetero-interface forms a two dimensional charge carrier gas. Each semiconductor structure is grown within one of the holes and includes at least one LED active layer between an n-type semiconductor layer and a p-type semiconductor layer. The bottom one of the two semiconductor layers has the same conductivity type as the barrier layer on which it is formed. The hetero-interface is defined between the barrier layer and a buffer layer. The barrier layer and buffer layer can be formed from GaN, AlGaN, and/or InGaN of varying concentrations. The two dimensional charge carrier gas can be a 2D electron gas or a 2D hole gas.

Direct-bonded LED arrays drivers

Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.

Display panel and display device

A display panel and a display device are provided. The display panel includes a substrate, sub-pixels, a color conversion layer, and a color filter layer. At least one sub-pixel each includes a light-emitting element. The at least one light-emitting element of the at least one sub-pixels includes at least one blue light light-emitting element. The color conversion layer is configured to convert a color of light emitted by the light-emitting element. The color conversion layer includes red and green conversion layers. The red conversion layer is configured to convert blue light into red light, and the green conversion layer is configured to convert blue light into green light. The color filter layer includes red and green color resists. In a direction perpendicular to a plane of the substrate, the red color resist overlaps the red conversion layer, and the green color resist overlaps the green conversion layer.

Display device and method for manufacturing same

A display device may include: a substrate including a display area and a non-display area; and at least one pixel disposed in the display area, and comprising at least one pixel including an emission area that emits light. The at least one pixel may include: at least one sub-electrode extending in a direction on the substrate; at least one branch electrode extending in a direction and spaced apart from the sub-electrode; a first insulating layer disposed on the at least one sub-electrode and the at least one branch electrode; first electrodes disposed on the first insulating layer and electrically connected with the at least one sub-electrode; second electrodes disposed on the first insulating layer and electrically connected with the at least one branch electrode; and at least one light emitting element aligned between at least one of the first electrodes and at least one of the second electrodes.