The present disclosure provides a display panel and a display device. The display panel includes at least two first panels and a second panel. The first panels are spliced with a gap defined. The first panel includes a first pixel region and a second pixel region, the second pixel region being near the gap. The second pixel region includes second pixel units. The second panel includes a third pixel region and two fourth pixel regions, the third pixel region facing the gap, and the two fourth pixel regions being located on opposite sides of the third pixel region and overlapping with the second pixel regions. The fourth pixel region includes virtual pixel units, and the virtual pixel units faces and overlaps with the second pixel units in a one-to-one correspondence, and light from each second pixel unit is capable of passing through a corresponding virtual pixel unit.

A manufacturing method of a micro LED display device is provided. The method includes: providing an epitaxial structure layer, wherein the epitaxial structure layer comprises a plurality of micro light-emitting diodes disposed apart from each other; forming a connection layer at one side of the epitaxial structure layer away from the micro light-emitting diodes; providing a carrier and forming a release layer, a transparent layer and a light conversion layer on the carrier in order, wherein the light conversion layer comprises a plurality of light conversion portions, each of the light conversion portions corresponds to one of the micro light-emitting diodes; attaching the light conversion layer to the connection layer, so that the carrier configured with the release layer, the transparent layer and the light conversion layer is fixed on the epitaxial structure layer through the connection layer; and removing the release layer and the carrier.

A difference between the height of a highest point of a first protruding portion and the height of a lowest point of the first protruding portion in a film thickness direction of a reflective electrode is in a range from 0.4 m to 1 m.

A display module includes: a substrate including a mounting surface having a thin-film transistor (TFT) layer is formed thereon, a side surface, and a rear surface opposite to the mounting surface; a plurality of inorganic light-emitting elements mounted on the mounting surface; an anisotropic conductive layer on the TFT layer and configured to electrically connect the TFT layer with the plurality of inorganic light-emitting elements; a front cover for covering the mounting surface; a side cover for surrounding the side surface; and a metal plate adhered to the rear surface. A side end of the front cover extends to a region outside the mounting surface. The side cover is made of a moisture-proof material for preventing moisture from permeating, and extends to at least a part of a side surface of the metal plate from a lower portion of the front cover corresponding to the region outside the mounting surface.

A micro-LED display device mainly has a plurality of pixel areas arranged in matrix and a driving circuit. Each pixel area has a plurality of sub-pixel areas arranged adjacent to each other. In a first driving mode, the driving circuit enables the rows of pixel areas in sequence. When one of rows of pixel areas is enabled, the driving circuit controls one sub-pixel area of each pixel area on the enabled row of pixel areas to display an image color. In a second driving mode, the rows of pixel areas are also enabled in sequence. When one of rows of pixel area is enabled, the driving circuit drives all sub-pixel areas of each pixel area on the enabled row of pixel area to synchronously display the same image color. Therefore, a high-brightness requirement is met, and the overall power consumption is not increased.

A method for manufacturing an image display device includes: providing a second substrate that includes a first substrate, and a semiconductor layer grown on the first substrate, the semiconductor layer including a light-emitting layer; providing a third substrate including: a circuit including a circuit element formed on a light-transmitting substrate, a first insulating film covering the circuit, and a conductive layer including a light-reflective part formed on the first insulating film; bonding the semiconductor layer to the third substrate; forming a light-emitting element from the semiconductor layer; forming a second insulating film covering the conductive layer, the light-emitting element, and the first insulating film; forming a via extending through the first and second insulating films; and electrically connecting the light-emitting element and the circuit element by the via.

A display device includes a first display panel; and a second display panel, wherein the first display panel includes a first substrate including a first region and a second region that is thinner than the first region, a first scan driver positioned on one edge of the first region, a second scan driver positioned in the second region, and a plurality of pixels connected to the first scan driver and the second scan driver by a scan line, the second display panel includes a second substrate including a first region and a second region that is thinner than the first region, a first scan driver positioned on one edge of the first region, and a plurality of pixels connected to the first scan driver by a scan line.

A micro LED display device includes an epitaxial structure layer, a connection layer, a light conversion layer and a transparent layer. The epitaxial structure layer includes a plurality of micro LEDs disposed apart from each other. The connection layer is disposed at one side of the epitaxial structure layer away from the micro LEDs. The light conversion layer is fixed on the epitaxial structure layer through the connection layer and includes a plurality of light conversion portions. Each of the light conversion portions corresponds to one of the micro LEDs. The transparent layer is disposed at one side of the light conversion layer away from the epitaxial structure layer. The ratio of the thickness of the transparent layer to the width of each light conversion portion is between 0.1 and 40. A manufacturing method of the micro LED display device is also provided.

A semiconductor light-emitting device has an emitter matrix with an arrangement of emitter cells interspersed with non-emitter cells. The emitter cell has a semiconductor emitter, and a non-emitter cell does not have a semiconductor emitter. A number of bond pads for connection to a power supply and a plurality of wirebonds are present. Each wirebond extends from a bond pad to the semiconductor emitter of an emitter cell. An imaging arrangement includes a light source for illuminating a scene. The light source has a pair of such semiconductor light-emitting devices. A method of manufacturing such a semiconductor light-emitting device is also described.

A foldable electronic device may bend about a bend axis. A foldable display panel may be configured to bend along the bend axis as the foldable device is folded. A display cover layer may overlap the display panel. The display panel may have an array of pixels configured to display an image viewable through the display cover layer. The display cover layer may be formed from a layer of glass. A recess may be formed in the layer of glass that runs parallel to the bend axis and that overlaps the bend axis. The recess forms a flexible locally thinned portion in the glass that allows the display cover layer to bend. A rough surface texture and polymer coating may be provided in the recess. The recess may have shallowly sloping walls.