An array substrate and a manufacturing method thereof, a display panel, and a display device are provided. The array substrate includes a bonding region and a non-bonding region, and further includes: a rigid substrate, in the non-bonding region; a driving circuit layer, in the non-bonding region; a light-emitting diode layer, on a side of the driving circuit layer away from the rigid substrate; a flexible base layer, in the bonding region and on the same side of the rigid substrate as the driving circuit layer; and a bonding wire layer, on a side of the flexible base layer away from the rigid substrate. The bonding wire layer and the flexible base layer is capable of being bent along an edge of the rigid substrate to a side of the rigid substrate away from the driving circuit layer.

A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.

Disclosed are a display panel including a light emitting panel, and a color conversion panel facing the light emitting panel, wherein the color conversion panel being converts an emission spectrum of light emitted from the light emitting panel, wherein the color conversion panel may include a color conversion layer including a plurality of regions including a color conversion region, and bank defining each region of the color conversion layer, the color conversion region may include quantum dots, and a refractive index of the bank is lower than a refractive index of the quantum dots, and an electronic device including the same.

A display device includes a first pixel disposed in a display area, wherein the first pixel includes first and second electrodes disposed in the display area and spaced apart from each other; a first light emitting element group including light emitting elements disposed between the first electrode and the second electrode; a first contact electrode disposed on the first electrode and connected to the light emitting elements; a second contact electrode disposed on the second electrode and connected to the light emitting elements; a first electrode contact portion disposed on the first electrode and connected to the first electrode; a second electrode contact portion disposed on the second electrode and connected to the second electrode; a first repair pattern connecting the second contact electrode and the first electrode contact portion; and a second repair pattern connecting the first contact electrode and the second electrode contact portion.

A display device includes pixel areas; and a pixel disposed in each of the pixel areas. The pixel includes a first electrode and a second electrode disposed on a substrate and disposed on a same layer, a light emitting element disposed on the first electrode and the second electrode, a third electrode electrically connecting the first electrode to a first end of the light emitting element, a fourth electrode electrically connecting the second electrode to a second end of the light emitting element, and an electrode pattern and the electrode pattern and one of the third electrode and the fourth electrode being disposed on a same layer.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, and the multiple micro-LEDs sharing the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer. A bottom surface of the isolation structure is aligned with a bottom of the light emitting layer, and a top surface of the isolation structure is aligned with a top surface of the light emitting layer.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer.

A display apparatus including a plurality of pixel regions disposed on a support substrate, each of the pixel regions including a plurality of subpixel stacks including a first epitaxial stack, a second epitaxial stack, and a third epitaxial stack, in which light generated from the first epitaxial stack is to be emitted to the outside of the display apparatus through the second and third epitaxial stacks, light generated from the second epitaxial stack is to be emitted to the outside of the display apparatus through the third epitaxial stack, during operation, one of the subpixel stacks within each pixel region is configured to be selected and driven, and at least one subpixel stack further includes an electrode disposed between the first epitaxial stack and the support substrate to be in ohmic contact with the first epitaxial stack.

A display apparatus including a plurality of pixel regions disposed on a support substrate, each of the pixel regions including a plurality of subpixel stacks including a first epitaxial stack, a second epitaxial stack, and a third epitaxial stack, in which light generated from the first epitaxial stack is to be emitted to the outside of the display apparatus through the second and third epitaxial stacks, light generated from the second epitaxial stack is to be emitted to the outside of the display apparatus through the third epitaxial stack, during operation, one of the subpixel stacks within each pixel region is configured to be selected and driven, and at least one subpixel stack further includes an electrode disposed between the first epitaxial stack and the support substrate to be in ohmic contact with the first epitaxial stack.

The LED structure includes a substrate and a plurality of LED units formed on the substrate. Each LED unit includes a bonding layer formed on the substrate, a first doping type semiconductor layer formed on the bonding layer, a second doping type semiconductor layer formed on the first doping type semiconductor layer, a passivation layer formed on the second doping type semiconductor layer and a portion of the first doping type semiconductor layer; and an electrode layer formed on a portion of the passivation layer and contacting the second doping type semiconductor layer. The plurality of LED units include a first LED unit and a second LED unit adjacent to the first LED unit. The first doping type semiconductor layer of the first LED unit horizontally extends to the first doping type semiconductor layer of the second LED unit adjacent to the first LED unit, and the first LED unit and the second LED unit are individually functionable LED units.