A method of fabricating a display device includes forming a transistor above a substrate, and a pixel electrode at a same layer as one of electrodes of the transistor, forming an adhesive layer on the pixel electrode, placing a light-emitting element on the adhesive layer, forming an insulting layer to cover the transistor, the pixel electrode, and the light-emitting element, and forming a first bridge pattern electrically connecting the transistor to a first end of the light-emitting element, and a second bridge pattern electrically connected to a second end of the light-emitting element, wherein the light-emitting element is primarily fixed by the adhesive layer, and wherein the light-emitting element is secondarily fixed by the insulating layer.

A display device and a method of manufacturing the display device are provided. The display device includes a display substrate including a driving circuit; an array layer provided on the display substrate and including a plurality of grooves; a micro-semiconductor chip provided in a groove of the plurality of grooves, the micro-semiconductor chip including: an n-type semiconductor layer; an active layer provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; and a first electrode provided on the p-type semiconductor layer; and a second electrode connected to the n-type semiconductor layer from a lower surface of the display substrate; a first wiring connected to the first electrode; and a second wiring connected to the second electrode.

The disclosure provides a light emitting element array, a display device, and a method of manufacturing the display device. A light emitting element array includes a base substrate, each of a plurality of light emitting elements including a light emitting element rod including a third semiconductor layer, a second semiconductor layer, a light emitting layer, and a first semiconductor layer sequentially stacked on the base substrate and an insulating layer surrounding the light emitting element rod and a connection electrode disposed on the first semiconductor layer of each of the plurality of light emitting elements, wherein a diameter of the connection electrode is greater than a diameter of the light emitting element, and the connection electrode surrounds a side surface of the first semiconductor layer and a side surface of the light emitting layer.

A device for facilitating emitting light is disclosed. Accordingly, the device may include at least one substrate, at least one first layer configured to be placed on the at least one substrate. Further, the at least one first layer may be an n-type nitride based semiconductor layer. At least one second layer configured to be placed on the at least one first layer. Further, the at least one second layer may be a nitride based semiconductor. At least one third layer configured to be placed on the at least one second layer. Further, the at least one third layer may be a p-type semiconductor layer. At least one fourth layer configured to be placed on the at least one third layer. Further, the at least one fourth layer may include at least one transparent electrode.

A method for manufacturing a light emitting device can include providing a substrate, forming a first active layer including a first electrical polarity, forming a light emitting region, forming a second active layer including a second electrical polarity, and forming a first electrical contact layer. The light emitting region can emit light with a target wavelength between 200 nm and 300 nm. A plurality of mesas can be formed, where each mesa can include a portion of the first active layer, the light emitting region, the second active layer, and the first electrical contact layer. A mesa width of each mesa is smaller than twice a current spreading length of the light emitting device. In some cases, the current spreading length is from 400 nm to 5 microns. In some cases, a distance separating the mesas from 1 micron to 10 microns.

An array of semiconductor structures is grown on a hetero-interface barrier layer by forming successive semiconductor layers within holes formed through a dielectric layer deposited above the hetero-interface barrier layer. The hetero-interface forms a two dimensional charge carrier gas. Each semiconductor structure is grown within one of the holes and includes at least one LED active layer between an n-type semiconductor layer and a p-type semiconductor layer. The bottom one of the two semiconductor layers has the same conductivity type as the barrier layer on which it is formed. The hetero-interface is defined between the barrier layer and a buffer layer. The barrier layer and buffer layer can be formed from GaN, AlGaN, and/or InGaN of varying concentrations. The two dimensional charge carrier gas can be a 2D electron gas or a 2D hole gas.

Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.

Discussed is a display device, including a substrate, a wiring electrode disposed on the substrate, a plurality of semiconductor light-emitting elements electrically connected to the wiring electrode, an anisotropic conductive layer disposed between the plurality of semiconductor light-emitting elements and formed of a mixture of conductive particles and an insulating material; and a buffer portion disposed on a lower surface of a semiconductor light-emitting element of the plurality of semiconductor light-emitting elements so as to allow the wiring electrode and the semiconductor light-emitting element to be spaced apart by a predetermined distance, and provided with at least one hole, wherein the mixture of the conductive particles and the insulating material is disposed inside the at least one hole, and the wiring electrode is electrically connected to the semiconductor light-emitting element through conductive particles disposed inside the at least one hole.

The present disclosure discloses a display substrate, including a substrate, and a driver circuit, an insulation layer and a bonding electrode sequentially superposed on the substrate. The bonding electrode is configured to be connected to an anode and a cathode of a micro inorganic light-emitting diode chip to be bonded. The display substrate further includes an elastic layer sandwiched between the bonding electrode and the insulation layer, the elastic layer having an orthographic projection on the substrate covering at least an orthographic projection of the bonding electrode on the substrate. The present disclosure provides a display panel, including the above display substrate, and further including a micro inorganic light-emitting diode chip having an anode and a cathode thereof connected to the bonding electrode on the display substrate.

A device includes: an active layer provided in a first comb tooth region on an n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; an n-side contact electrode provided in a second comb tooth region on the n-type semiconductor layer; a p-side contact electrode provided in a third comb tooth region on the p-type semiconductor layer; a protective layer having a p-side pad opening provided in a fourth comb tooth region on the p-side contact electrode, having an n-side pad opening provided in a fifth comb tooth region on the n-side contact electrode, and made of a dielectric material; a p-side pad electrode connected to the p-side contact electrode in the p-side pad opening; and an n-side pad electrode connected to the n-side contact electrode in the n-side pad opening.