A display device may include: a substrate including a display area and a non-display area; and at least one pixel disposed in the display area, and comprising at least one pixel including an emission area that emits light. The at least one pixel may include: at least one sub-electrode extending in a direction on the substrate; at least one branch electrode extending in a direction and spaced apart from the sub-electrode; a first insulating layer disposed on the at least one sub-electrode and the at least one branch electrode; first electrodes disposed on the first insulating layer and electrically connected with the at least one sub-electrode; second electrodes disposed on the first insulating layer and electrically connected with the at least one branch electrode; and at least one light emitting element aligned between at least one of the first electrodes and at least one of the second electrodes.

A display panel includes a substrate, first bonding electrodes, connecting leads, an electrode carrier plate and second bonding electrodes. The substrate includes a display surface, a non-display surface, and a selected side face. The display surface includes a first bonding area, and the non-display surface includes a second bonding area. The first bonding electrodes are arranged side by side at the intervals in the first bonding area. The connecting leads are arranged side by side at intervals, each connecting lead includes a first portion, a second portion and a third portion, and the first portion of each connecting lead is electrically connected to a first bonding electrode. The electrode carrier plate is arranged on the non-display surface and provided thereon with the second bonding electrodes arranged side by side at intervals, and each second bonding electrode is electrically connected to a third portion of a connecting lead.

A light emitting device including a substrate having a first region and a second region, a light emitting stack including vertically stacked semiconductor layers disposed on the first region of the substrate, at least one pillar disposed on the second region of the substrate and laterally spaced apart from the light emitting stack, and at least one electrode extending from the first region to the second region of the substrate and electrically connecting the light emitting stack to the at least one pillar, in which the at least one pillar is disposed on the at least one electrode, respectively.

A method of fabricating an LED light plate, an LED light plate, and a display device are disclosed. The method includes: disposing a functional layer on each LED chip to form multiple chips to be transferred; placing the chips into a receiving tank filled with a suspension; defining a plurality of grooves matching the shape of the functional layer in the transport substrate; placing the transport substrate into the suspension so that a first electrode in each receiving tank faces each second electrode in the respective groove and that each chip is located between the first electrode and the respective second electrode; energizing the first electrode and each second electrode, so that each chip is absorbed by the transporting substrate, and each functional layer is moved into the respective groove; and transplanting the multiple chips onto a target substrate; where each functional layer is filled with multiple charged particles.

The present disclosure provides a light-emitting substrate. The light-emitting substrate includes a backboard, a light-emitting layer and a plurality of first optical bodies. The light-emitting layer is located on a side of the backboard; the light-emitting layer includes a plurality of light-emitting units, and the plurality of light-emitting units are arranged in an array. Each first optical body includes a first optical portion and a second optical portion; a gap between two adjacent light-emitting units is filled with the first optical portion, and the second optical portion is located on a side of the light-emitting layer away from the backboard, and is connected to the first optical portion. The second optical portion includes a first surface extending outwards from an edge of the first optical portion.

A light-emitting diode and a light-emitting device are provided. A transparent conductive layer, a current blocking layer and a first metal reflective layer are sequentially arranged on a side of a second semiconductor layer away from an active layer. A side of the first metal reflective layer adjacent to the current blocking layer is a first Al reflective layer, and metal Al has high reflectivity in a short-wave band, increasing the reflection of light radiated by the active layer. Since there is no need to form an adhesion layer between the first Al reflective layer and the current blocking layer, there is no light absorption problem of the adhesion layer. A projection area of the first metal reflective layer is greater than or equal to that of the transparent conductive layer, so that the first metal reflective layer can cover a larger light-emitting surface, thereby further improving the light reflection.

A display device may include: a substrate having a display area and a non-display area, and including a first surface and a second surface facing away from each other in a thickness direction of the substrate, and a side surface connecting the first and second surfaces; a light emitting element on the first surface of the substrate in the display area; a pad electrode on the first surface of the substrate in the non-display area; an intermediate electrode on the second surface of the substrate in the display area; and a side connection line on the side surface, and electrically connected to each of the pad electrode and the intermediate electrode. The pad electrode may include a first pad electrode and a second pad electrode. Opposite side surfaces of the second pad electrode may have the same inclination angles as opposite side surfaces of the first pad electrode.

A display device includes a first substrate having a first surface and a plurality of LED elements mounted on the first surface of the first substrate. Each of the plurality of LED elements includes a main body portion having a second surface facing the first surface of the first substrate and a third surface on a side opposite to the second surface, an anode electrode and a cathode electrode provided on the second surface of the main body portion, and an organic film bonded to the third surface of the main body portion. The organic film has a fourth surface facing and bonded to the third surface and a fifth surface on a side opposite to the fourth surface. The fifth surface of the organic film has a plurality of depressions.

An inorganic light-emitting diode substrate includes: a base, a plurality of epitaxial layer structures disposed on the base, a passivation layer, and a plurality of second electrodes disposed on a side of the passivation layer away from the base. The base includes a base substrate and a plurality of first electrodes disposed on the base substrate. The plurality of epitaxial layer structures are spaced apart, and each first electrode is coupled to one epitaxial layer structure. The passivation layer is made of photoresist. The passivation layer covers surfaces, away from the base, of the plurality of epitaxial layer structures, and fills gaps between the plurality of epitaxial layer structures. The passivation layer has a plurality of via holes, and each second electrode is coupled to one epitaxial layer structure through at least one via hole.

Disclosed is a method for monolithic integration preparation of a full-color nitride semiconductor micro light-emitting diode (micro-LED) array. The method includes preparing a composite conductive substrate; overlaying an insulating template onto the composite conductive substrate to prepare a template substrate; overlaying monocrystalline graphene onto the template substrate in a completely aligned manner to obtain a customized template graphene substrate including graphene array units, wherein one blue-region graphene array element, one green-region graphene array element, and two red-region graphene array elements in each graphene array unit have surface properties different from each other; then performing an in-situ process to epitaxially grow a vertical-structure all-nitride material, to obtain a full-color micro-LED array epitaxial wafer by one-step in-situ process; finally, performing packaging and preparing a transparent electrode, to obtain a vertical-structure full-color nitride micro-LED array with top light emission.