A light emitting device package includes a package substrate, a semiconductor light emitting device on the package substrate, the semiconductor light emitting device including a substrate with a light emitting structure, a wavelength conversion portion on the semiconductor light emitting device, the wavelength conversion portion including a first region overlapping the light emitting structure, and a second region other than the first region, an adhesive layer between the semiconductor light emitting device and the wavelength conversion portion, and a reflective resin portion on the package substrate, the reflective resin portion surrounding the semiconductor light emitting device and the wavelength conversion portion, and the reflective resin portion extending to the second region.

A pixel may include first and second areas sectioned from each other in a first direction; 1-1-th to 4-1-th electrodes successively arranged in the first area in a second direction intersecting the first direction; 1-2-th to 4-2-th electrodes successively arranged in the second area in the second direction; light emitting elements disposed between two adjacent electrodes of the 1-1-th to 4-1-th electrodes of the first area; light emitting elements disposed between two adjacent electrodes of the 1-2-th to 4-2-th electrodes of the second area; a first conductive pattern disposed in the first area, and electrically connecting the 2-1-th and 3-1-th electrodes; a second conductive pattern disposed over the first and second areas, and electrically connecting the 4-1-th electrode of the first area with the 1-2-th electrode of the second area; and a third conductive pattern disposed in the second area and electrically connecting the 2-2-th and 3-2-th electrodes.

According to one embodiment, a semiconductor device includes a substrate; a first transistor, a second transistor, a third transistor, and a fourth transistor; a first light emitting element and a second light emitting element; a first light receiving element configured to switch the first transistor and the second transistor to an ON state or to an OFF state; and a second light receiving element configured to switch the third transistor and the fourth transistor to the ON state or to the OFF state, wherein the first light emitting element and the second light emitting element are configured such that, when either one of the first light emitting element or the second light emitting element is turned to a lit state, the other one is turned to an unlit state.

A light-emitting device is provided. The light-emitting device includes a light-emitting diode, a reflective structure, and a package structure. The reflective structure includes a bottom surface and a lateral part. The light-emitting diode is disposed on the bottom surface. The lateral part is disposed surrounding the bottom surface and disposed on the bottom surface. The package structure is configured to package the light-emitting diode and the reflective structure. The package structure includes a first package part and a second package part. The first package part has a phosphorescent powder. An interface is between the first package part and the second package part. The interface is disposed below a top surface of the lateral part.

A method for manufacturing a light emitting device can include providing a substrate, forming a first active layer including a first electrical polarity, forming a light emitting region, forming a second active layer including a second electrical polarity, and forming a first electrical contact layer. The light emitting region can emit light with a target wavelength between 200 nm and 300 nm. A plurality of mesas can be formed, where each mesa can include a portion of the first active layer, the light emitting region, the second active layer, and the first electrical contact layer. A mesa width of each mesa is smaller than twice a current spreading length of the light emitting device. In some cases, the current spreading length is from 400 nm to 5 microns. In some cases, a distance separating the mesas from 1 micron to 10 microns.

An electronic device includes: a semiconductor layer; a first layer disposed on the semiconductor layer, including at least one of oxygen atoms and nitrogen atoms and having a first maximum thickness; a second layer, wherein the first layer is disposed between the second layer and the semiconductor layer, and the second layer has a second maximum thickness; and a third layer, wherein the second layer is disposed between the first layer and the third layer, the third layer has a third maximum thickness, and the second maximum thickness and the third maximum thickness are greater than the first maximum thickness, wherein the first layer comprises a first position and a second position, the first position is closer to the semiconductor layer than the second position, and a first oxygen atomic percentage at the first position is less than a second oxygen atomic percentage at the second position.

A display device including a semiconductor light emitting device according to an embodiment may include a substrate, a first assembly wiring and a second assembly wiring arranged to be spaced apart from each other on the substrate, a planarization layer disposed on the first assembly wiring and the second assembly wiring and having an opening overlapping the first assembly wiring and the second assembly wiring, a light emitting device including a first electrode placed inside the opening and electrically connected to the first assembly wiring, and wherein the opening includes a main opening and one or more auxiliary openings that are connected to the main opening and are smaller than the main opening.

Discussed is a display device, including a substrate, a wiring electrode disposed on the substrate, a plurality of semiconductor light-emitting elements electrically connected to the wiring electrode, an anisotropic conductive layer disposed between the plurality of semiconductor light-emitting elements and formed of a mixture of conductive particles and an insulating material; and a buffer portion disposed on a lower surface of a semiconductor light-emitting element of the plurality of semiconductor light-emitting elements so as to allow the wiring electrode and the semiconductor light-emitting element to be spaced apart by a predetermined distance, and provided with at least one hole, wherein the mixture of the conductive particles and the insulating material is disposed inside the at least one hole, and the wiring electrode is electrically connected to the semiconductor light-emitting element through conductive particles disposed inside the at least one hole.

The present disclosure discloses a display substrate, including a substrate, and a driver circuit, an insulation layer and a bonding electrode sequentially superposed on the substrate. The bonding electrode is configured to be connected to an anode and a cathode of a micro inorganic light-emitting diode chip to be bonded. The display substrate further includes an elastic layer sandwiched between the bonding electrode and the insulation layer, the elastic layer having an orthographic projection on the substrate covering at least an orthographic projection of the bonding electrode on the substrate. The present disclosure provides a display panel, including the above display substrate, and further including a micro inorganic light-emitting diode chip having an anode and a cathode thereof connected to the bonding electrode on the display substrate.

A light-emitting device, including: a semiconductor stack generating a first light; and a filter formed on the semiconductor stack, including a first surface facing the semiconductor stack and a second surface opposite to the first surface; and a transparent conductive layer formed on the semiconductor stack; wherein: the filter includes a plurality of first dielectric layers with a first refractive index and a plurality of second dielectric layers with a second refractive index alternately stacked, a portion of the first light is transmitted by the filter and extracted from the second surface, the light-emitting device has a beam angle in a range of 50 degrees to 110 degrees, and the filter comprises a light transmittance of more than 90% with respect to light incident at an incident angle in a range less than 10 degrees.