A semiconductor device is provided, which includes an active region, a first semiconductor layer, a first metal element-containing structure, a first p-type or n-type layer, a second semiconductor layer and an insulating layer. The active region has a first surface and a second surface. The first semiconductor layer is at the first surface. The first metal element-containing structure covers the first semiconductor layer and comprising a first metal element. The first p-type or n-type layer is between the first semiconductor layer and the first metal element-containing structure. The second semiconductor layer is between the first semiconductor layer and the first p-type or n-type layer. The insulating layer covers a portion of the first semiconductor layer and a portion of the second semiconductor. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm.

A semiconductor heterostructure for an optoelectronic device with improved light emission is disclosed. The heterostructure can include a first semiconductor layer having a first index of refraction n1. A second semiconductor layer can be located over the first semiconductor layer. The second semiconductor layer can include a laminate of semiconductor sublayers having an effective index of refraction n2. A third semiconductor layer having a third index of refraction n3 can be located over the second semiconductor layer. The first index of refraction n1 is greater than the second index of refraction n2, which is greater than the third index of refraction n3.

A light emitting diode including a substrate having a first area and a second area defined by an isolation groove line, a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer, an active layer, a first electrode pad electrically connected to the lower semiconductor layer, a second electrode pad electrically connected to the upper semiconductor layer, and a connecting portion electrically connecting the semiconductor stack disposed in the first and second areas to each other, and including a first portion, a second portion, and a third portion extending from a second distal end of the first portion, in which the isolation groove line is disposed between the first and second electrode pads and exposes the substrate, the first portion extends along a first direction substantially parallel to an extending direction of the isolation groove line, and the second and third portions extend in a second direction crossing the first direction.

The invention relates to various aspects of a -LED or a -LED array for augmented reality or lighting applications, in particular in the automotive field. The -LED is characterized by particularly small dimensions in the range of a few m.

A spliced panel is provided. A light-emitting diode substrate is disposed on two adjacent display panels and blocks a gap. A substrate comprises a first surface, a second surface, and a third surface. The first surface and the second surface are disposed opposite to each other. The third surface is connected between the first surface and the second surface. A plurality of light-emitting diodes are disposed on the first surface. The reflective layer is disposed on the third surface. An angle between the third surface and the second surface is greater than or equal to 90.

A light-emitting device is provided. The light-emitting device includes a light-emitting diode, a reflective structure, and a package structure. The reflective structure includes a bottom surface and a lateral part. The light-emitting diode is disposed on the bottom surface. The lateral part is disposed surrounding the bottom surface and disposed on the bottom surface. The package structure is configured to package the light-emitting diode and the reflective structure. The package structure includes a first package part and a second package part. The first package part has a phosphorescent powder. An interface is between the first package part and the second package part. The interface is disposed below a top surface of the lateral part.

An image display device includes a drive circuit substrate, micro LED elements, and a wavelength conversion layer that converts excitation light emitted from the micro LED elements and that emits converted long-wavelength light to a side opposite to the drive circuit substrate, the micro LED elements and the wavelength conversion layer being sequentially stacked on the drive circuit substrate. The micro LED elements include a first multilayer film that reflects the long-wavelength light converted by the wavelength conversion layer.

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly current injection structures for LED chips are disclosed. Current injection structures include integrated layers or materials with high work functions as part of contact structures for epitaxial layers of active LED structures. Exemplary structures provide high work function contact layers for p-type epitaxial layers to enhance hole mobility and transport. Further contact structures include combinations of high work function layers with other current spreading layers. Exemplary materials for high work function layers include transition metal oxides.

A unit pixel and a displaying apparatus including the unit pixel are provided. The unit pixel includes a transparent substrate, a plurality of light emitting devices arranged on the transparent substrate, a light blocking layer disposed between the transparent substrate and the light emitting devices, and having at least one window, and a semi-transmissive layer disposed between at least one of the plurality of light emitting devices and the transparent substrate to overlap with the window at least partially.

A method for manufacturing a light emitting device can include providing a substrate, forming a first active layer including a first electrical polarity, forming a light emitting region, forming a second active layer including a second electrical polarity, and forming a first electrical contact layer. The light emitting region can emit light with a target wavelength between 200 nm and 300 nm. A plurality of mesas can be formed, where each mesa can include a portion of the first active layer, the light emitting region, the second active layer, and the first electrical contact layer. A mesa width of each mesa is smaller than twice a current spreading length of the light emitting device. In some cases, the current spreading length is from 400 nm to 5 microns. In some cases, a distance separating the mesas from 1 micron to 10 microns.