An embodiment of the application discloses a panel and a manufacturing method thereof. In the panel, a thin-film transistor layer, a first conductive layer, a light-emitting diode (LED), and a second conductive layer are sequentially disposed on a substrate. The LED includes a first end and a second end. The first end is disposed on the first electrode. The second end is disposed on the second electrode. The second conductive layer includes a first conductive portion and a second conductive portion. The first conductive portion is electrically connected to the first end and the first electrode. The second conductive portion is electrically connected to the second end and the second electrode.

A method for making light emitting device LED arrays includes the steps of providing a plurality of LEDs having a desired configuration (e.g., VLED, FCLED, PLED); attaching the LEDs to a carrier substrate and to a temporary substrate; forming one or more metal layers and one or more insulator layers configured to electrically connect the LEDs to form a desired circuitry; and separating the LEDs along with the layered metal layers and insulator layers that form the desired circuitry from the carrier substrate and the temporary substrate.

A display device includes: a plurality of light emitting elements on a first substrate; a second substrate facing the first substrate; a partition wall on one surface of the second substrate facing the first substrate, and including a plurality of openings; a plurality of color filters in the plurality of openings; wavelength conversion layers on the plurality of color filters, respectively, and to convert wavelengths of light emitted from the plurality of light emitting elements; and an adhesive layer adhering the first substrate and the second substrate to each other. The partition wall includes a silicon single crystal.

A display device may include: a base layer including a plurality of islands, at least one first bridge configured to connect the islands in a first direction, and at least one second bridge configured to connect the islands in a second direction; and at least one pixel including a plurality of sub-pixels in the base layer. Each of the sub-pixels may include: a first electrode and a second electrode in one island of the islands and spaced from each other; a third electrode and a fourth electrode in one bridge of the at least one first bridge and the at least one second bridge and spaced from each other; at least one first light emitting element between the first electrode and the second electrode; and at least one second light emitting element between the third electrode and the fourth electrode.

A light-emitting substrate includes a transparent substrate; a first metal light-shielding layer, a wiring layer and light-emitting devices. The first metal light-shielding layer is disposed on the transparent substrate. The wiring layer is disposed on a side of the first metal light-shielding layer away from the transparent substrate, and the wiring layer includes circuit traces and pads. Orthographic projections of the circuit traces and the pads on the transparent substrate are all located within an orthographic projection of the first metal light-shielding layer on the transparent substrate. The light-emitting devices are disposed on a side of the wiring layer away from the transparent substrate, and electrically connected to some of the pads; and orthographic projections of the light-emitting devices on the transparent substrate are located within the orthographic projection of the first metal light-shielding layer on the transparent substrate.

A method includes forming a light emitting chip on a surface of a growth substrate; forming a transfer film layer on a transient substrate; forming an electrode fixing structure on a side of the transfer film layer away from the transient substrate, and opening a through-wire hole in the transfer film layer adjacent to the electrode fixing structure; making the growth substrate opposite to the transient substrate; making the light emitting transfer structure opposite to a driving backplane; and forming a connection wire, a portion of the connection wire is connected to the binding-point electrode through the through-wire hole, and another portion of the connection wire is connected to the electrode fixing structure.

A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAl.sub.xN.sub.y material at least partially contiguous with the semiconductor structure. The TiAl.sub.xN.sub.y material can be TiAl.sub.3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAl.sub.xN.sub.y material, such that the TiAl.sub.xN.sub.y material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.

A display device may include: a substrate including a display area and a non-display area, the non-display area including a pad area; a transistor and a conductive pattern on the substrate in the display area; a via layer on the transistor and the conductive pattern to cover the transistor and the conductive pattern; a first alignment electrode and a second alignment electrode on the via layer; a light emitting element between the first and second alignment electrodes; a first electrode and a second electrode that are spaced from each other, and electrically connected to the light emitting element; a plurality of pads on the substrate in the pad area; and a dummy pattern on the substrate in the pad area, and spaced from the plurality of pads. The via layer and the dummy pattern may include a same material.

An optoelectronic component includes an optoelectronic semiconductor chip. The optoelectronic component also includes a control element for controlling an electric current and/or an electric voltage of the optoelectronic semiconductor chip. The optoelectronic semiconductor chip and the control element are arranged one above the other and are mechanically and electrically conductively connected to one another. The optoelectronic component further includes a first connection electrode and a second connection electrode for electrically contacting the optoelectronic component from the outside. The optoelectronic semiconductor chip and the control element are each electrically conductively connected to one of the first and second connection electrodes.

A display device and a method of manufacturing the same according to an embodiment include a substrate, first assembly wiring and second assembly wiring alternately arranged on the substrate and overlapping each other, an insulating layer disposed between the first assembly wiring and the second assembly wiring, a planarization layer disposed on the first assembly wiring and the second assembly wiring, and having a first opening, and a light emitting device disposed inside the first opening, wherein the first electrode overlaps the first assembly wiring and the second assembly wiring. And, the first electrode is bonded to one of the first assembly wiring and the second assembly wiring.