H10H20/0364

Method of direct-bonded optoelectronic devices

Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.

Array substrate, method of manufacturing the same, and display device

An array substrate, a method of manufacturing the array substrate, and a display device are provided. The array substrate includes: a transparent rigid base; light-emitting chips on the transparent rigid base, each light-emitting chip including a chip body and a pin coupled to the chip body, a light-exiting surface of the chip body facing towards the transparent rigid base, and the pin being on a side of the chip body facing away from the transparent rigid base; a driving wire layer on a side of the pin facing away from the transparent rigid base; and a driving chip structure on a side of the driving wire layer facing away from the transparent rigid base. The driving chip structure is coupled to pins of the plurality of light-emitting chips through the driving wire layer, and is used for provide driving signals for the light-emitting chips.

Optoelectronic component and method for producing an optoelectronic component

In an embodiment an optoelectronic component includes a carrier, an optoelectronic semiconductor chip and an encapsulation, wherein the semiconductor chip is fixed on a mounting surface of the carrier and is electrically conductively connected with the carrier, wherein the encapsulation is located around the semiconductor chip and covers the mounting surface at least partially, wherein the encapsulation includes a first layer and a second layer, wherein the first layer is arranged between the mounting surface and the second layer, wherein each of the first layer and the second layer is based on a silicone, and wherein the first layer and the second layer are directly adjacent to each other in a region of an interface.

Display panel and manufacturing method thereof

Disclosed are a display panel and a manufacturing method thereof. The display panel comprises: a substrate, a plurality of conductive units and a plurality of Mini LEDs. A material of the conductive units is conductive ink, and the conductive ink comprises a prepolymer, a monomer, a conductive filler and a photoinitiator. The viscosity of the conductive ink itself is employed to adsorb the Mini LEDs to improve the transfer accuracy of the Mini LEDs and to prevent the weak adsorption between the Mini LEDs and the conductive units, which affects the electrical connection between the conductive units and the Mini LEDs.

LED display apparatus
12199133 · 2025-01-14 · ·

A display apparatus including a display substrate, light emitting devices disposed on the display substrate, circuit electrodes disposed between the light emitting devices and the display substrate, and a transparent layer covering the light emitting devices and the circuit electrodes, in which at least one of the light emitting devices includes a first LED sub-unit configured to emit light having a first wavelength, a second LED sub-unit adjacent to the first LED sub-unit and configured to emit light having a second wavelength, a third LED sub-unit adjacent to the second LED sub-unit and configured to emit light having a third wavelength, and a substrate disposed on the third LED sub-unit, in which a difference in refractive indices between the transparent layer and air is less than a difference in refractive indices between the substrate and a semiconductor layer of the third LED sub-unit.

Driving substrate, method for preparing the same, and display device

The present disclosure provides a driving substrate, a method for preparing the same, and a display device. The driving substrate includes: a base substrate; a stress buffer layer located on the base substrate; a plurality of first wirings located on a surface of the stress buffer layer away from the base substrate; a first insulating layer located on a surface of the first wiring away from the base substrate; a plurality of second wiring structures located on a surface of the first insulating layer away from the base substrate; a second insulating layer located on a surface of the second wiring structure away from the base substrate; an electronic element located on a surface of the second insulating layer away from the base substrate.

Method of manufacturing display device and display device
12198970 · 2025-01-14 · ·

According to one embodiment, a method of manufacturing a display device is provided. The display device includes a mounting substrate and a plurality of light-emitting elements two-dimensionally arrayed and mounted on the mounting substrate. The plurality of light-emitting elements have a planar shape that is non-rotationally symmetric and non-linearly symmetric. The method includes preparing the plurality of light-emitting elements separated from each other, preparing an array guide member, and aligning the plurality of light-emitting elements following the two-dimensional array of the opening portion group.

Ultra-high-resolution micro-display screen and manufacturing process therefor
12199078 · 2025-01-14 · ·

An ultra-high-resolution micro-display screen and a manufacturing process therefor. In the process, multiple LED light-emitting structures are formed by means of pre-arranging isolation columns and a conductive solder on a drive backplate, performing alignment-free pressing on the driving backplate (10) and an LED epitaxial wafer, and performing exposure and development on the LED epitaxial wafer. According to the method, accurate alignment does not need to be performed, and there are few pixel defects. LED units of a micro-display screen are embedded into the conductive solder, such that a high soldering adhesion is achieved, and the reliability and stability of the display screen can be improved.

Display panel, manufacturing method thereof, and bonding structure

A display panel, a manufacturing method thereof, and a bonding structure are provided. The display panel includes a first body electrode and a second body electrode disposed on a same layer on a substrate and disposed oppositely. A first conductive electrode is disposed on the first body electrode. A light-emitting device includes a first lead and a second lead disposed opposite to each other. The first lead is disposed to contact the first body electrode and the first conductive electrode. The second lead contacts the second body electrode.

Pixel, display device having same and production method therefor

A pixel may include first and second areas sectioned from each other in a first direction; 1-1-th to 4-1-th electrodes successively arranged in the first area in a second direction intersecting the first direction; 1-2-th to 4-2-th electrodes successively arranged in the second area in the second direction; light emitting elements disposed between two adjacent electrodes of the 1-1-th to 4-1-th electrodes of the first area; light emitting elements disposed between two adjacent electrodes of the 1-2-th to 4-2-th electrodes of the second area; a first conductive pattern disposed in the first area, and electrically connecting the 2-1-th and 3-1-th electrodes; a second conductive pattern disposed over the first and second areas, and electrically connecting the 4-1-th electrode of the first area with the 1-2-th electrode of the second area; and a third conductive pattern disposed in the second area and electrically connecting the 2-2-th and 3-2-th electrodes.