Provided in the embodiments of the present disclosure are a wiring substrate and a manufacturing method therefor, a light-emitting panel, and a display apparatus. The wiring substrate comprises: a substrate, a plurality of metal wires and an insulation layer, wherein the metal wires and the insulation layer are located on a same side of the substrate; the insulation layer is located in an area outside the metal wires and a part of the surfaces of the metal wires; the distance between the upper surface of the insulation layer and the substrate is greater than the distance between the upper surfaces of the metal wires and the substrate; the upper surface of the insulation layer can reflect light rays; the insulation layer is provided with first holes, and the first holes expose a part of the surfaces of the metal wires. By means of arranging the insulation layer, a function of protecting the metal wires can be achieved, so as to prevent the metal wires from being oxidized and corroded during a manufacturing process, and improve product performance. In addition, the surface of the insulation layer can reflect light rays, thus improving a light effect.

A light emitting device including a substrate having a first region and a second region, a light emitting stack including vertically stacked semiconductor layers disposed on the first region of the substrate, at least one pillar disposed on the second region of the substrate and laterally spaced apart from the light emitting stack, and at least one electrode extending from the first region to the second region of the substrate and electrically connecting the light emitting stack to the at least one pillar, in which the at least one pillar is disposed on the at least one electrode, respectively.

A display device includes a substrate having first and second surfaces, transistors, data lines, and light-emitting diodes above the first surface, front data pads above the first surface, electrically connected to the data lines, and arranged in a first direction along a first side of the substrate, a first insulating layer above the front data pads, rear data pads under the second surface, and arranged in the first direction, a second insulating layer under the rear data pads, and defining first and second openings overlapping one of the rear data pads, a first virtual line extending from the first opening in the first direction not overlapping the second opening, and a side wire connecting a front data pad to a rear data pad, and electrically connected to and overlapping the first rear data pad through the first opening.

A display panel, a tiled display panel and a manufacturing method of display panel are provided. The display panel includes a substrate; a light-shielding layer disposed on the substrate and provided with a plurality of through-holes; a transparent insulation layer including transparent portions arranged in the through-holes respectively; a light-emitting layer disposed on the transparent insulation layer, wherein the light-emitting layer includes a plurality of light-emitting diode (LED) chips are disposed to the plurality of through-holes in a one-to-one correspondence, and a light-emitting surface the LED chip faces to the transparent portion; a device array layer disposed on the light-shielding layer and including a driver and a plurality of metal wirings used to connect the LED chips with the driver; and a sealing layer disposed on the substrate and encapsulating the light-shielding layer, the transparent insulation layer, the light-emitting layer, and the device array layer.

This application discloses a pixel unit for semiconductor device and a manufacturing method, a micro display screen, and a discrete device, the pixel unit includes a target drive circuit, a display unit, and a common cathode, the backplane is provided with a drive circuit, and the drive circuit is provided with at least one anode; the display unit is provided on the backplane, it includes a first device layer and a second device layer stacked vertically from bottom to top, the first device layer and the second device layer are respectively connected to the corresponding anodes of the backplane; the common cathode is respectively connected to each device layer in the display unit, and the common cathode is connected to the external cathode.

An embodiment of the present disclosure provides a semiconductor device arrangement. This arrangement includes a substrate, an adhesive structure, and a first semiconductor device. The substrate includes an upper surface. The adhesive structure is located on the upper surface and includes a first concave region. The first semiconductor device includes a lower surface facing toward the adhesive structure and a conductive bump located under the lower surface and in the first concave region. The conductive bump includes a first portion and a second portion. Wherein the lower surface does not contact the adhesive structure, the first portion contacts the first concave region, and the second portion does not contact the first concave region.

A display device may include: a substrate having a display area and a non-display area, and including a first surface and a second surface facing away from each other in a thickness direction of the substrate, and a side surface connecting the first and second surfaces; a light emitting element on the first surface of the substrate in the display area; a pad electrode on the first surface of the substrate in the non-display area; an intermediate electrode on the second surface of the substrate in the display area; and a side connection line on the side surface, and electrically connected to each of the pad electrode and the intermediate electrode. The pad electrode may include a first pad electrode and a second pad electrode. Opposite side surfaces of the second pad electrode may have the same inclination angles as opposite side surfaces of the first pad electrode.

A method includes providing a ceramic substrate having a first arrangement portion recessed from a first planar portion; disposing a first conductive paste containing a first metal powder in the first arrangement portion; obtaining a first conductor by firing the first conductive paste; forming first recessed portions on a surface of the first conductor disposed in the first arrangement portion by polishing the first conductor and the ceramic substrate so that the first conductor and the first surface form a same plane; disposing a second conductive paste containing a second metal powder and a second organic resin binder in the first recessed portions; obtaining a second conductor by curing the second conductive paste; polishing the second conductor so that the second conductor and the first conductor form the same plane; and forming a first metal layer on surfaces of the first conductor and the second conductor.

An electronic device includes a heat dissipation structure that includes one or more openings. An electronic component is disposed on a surface of the heat dissipation structure and over the one or more openings. The electronic component is coupled to the heat dissipation structure by an adhesion material in the one or more openings.

In an embodiment a method for producing optoelectronic semiconductor devices includes providing at least one optoelectronic semiconductor chip with at least one contact side, generating at least one coating region and at least one protection region on the contact side or on at least one of the contact sides, applying at least one liquid coating material to the at least one contact side, wherein the at least one coating material wets the at least one coating region and does not wet the at least one protection region and solidifying the at least one coating material into at least one electrical contact structure on the at least one coating region such that the semiconductor chip is capable of being energized through the at least one contact structure.