Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

Disclosed herein is a lead frame assembly including a frame and lead frame units each including a chip holder having first and second electrode pads; and a pin unit having a first pin, a second pin and third pins each extending from the chip holder. The pin unit extending from one of the lead frame units is connected to the pin unit of the adjacent one of the lead frame units. For the lead frame units disposed adjacent to the frame, the pin units extending towards the frame are connected to the frame such that the lead frame units are fixedly positioned within the frame. A chip packaging device including a lead frame body and a packaging structure is also disclosed.

A display device includes a first electrode and a second electrode spaced apart from each other, each of the first electrode and the second electrode including an electrode base layer, a main electrode layer disposed on the electrode base layer, and an electrode upper layer disposed on a portion of the main electrode layer, a first insulating layer disposed on the first electrode and the second electrode, light-emitting elements disposed on the first electrode and the second electrode on the first insulating layer, a first connecting electrode electrically contacting the light-emitting elements, and a second connecting electrode electrically contacting the light-emitting elements. The first electrode includes a first part, the second electrode includes a second part, and the light-emitting elements are disposed on the first part and the second part.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

An inorganic light-emitting diode substrate includes: a base, a plurality of epitaxial layer structures disposed on the base, a passivation layer, and a plurality of second electrodes disposed on a side of the passivation layer away from the base. The base includes a base substrate and a plurality of first electrodes disposed on the base substrate. The plurality of epitaxial layer structures are spaced apart, and each first electrode is coupled to one epitaxial layer structure. The passivation layer is made of photoresist. The passivation layer covers surfaces, away from the base, of the plurality of epitaxial layer structures, and fills gaps between the plurality of epitaxial layer structures. The passivation layer has a plurality of via holes, and each second electrode is coupled to one epitaxial layer structure through at least one via hole.

A display panel and a display apparatus. The display panel includes a main display area, a first secondary display area, a second secondary display area and a transition display area, a transmittance of the first secondary display area is greater than a transmittance of the main display area, and the display panel includes: a first pixel unit located in the first secondary display area and including a first sub-pixel; a second pixel unit located in the second secondary display area and including a second sub-pixel; and a third pixel unit located in the transition display area and including a third sub-pixel, in which at least two of the first sub-pixel, the second sub-pixel and the third sub-pixel of a first color have a first size.

A display panel and a display apparatus. The display panel includes a main display area, a first secondary display area, a second secondary display area and a transition display area, a transmittance of the first secondary display area is greater than a transmittance of the main display area, and the display panel includes: a first pixel unit located in the first secondary display area and including a first sub-pixel; a second pixel unit located in the second secondary display area and including a second sub-pixel; and a third pixel unit located in the transition display area and including a third sub-pixel, in which at least two of the first sub-pixel, the second sub-pixel and the third sub-pixel of a first color have a first size.

Solid-state transducer (SST) dies and SST arrays having electrical cross-connections are disclosed herein. An array of SST dies in accordance with a particular embodiment can include a first terminal, a second terminal and a plurality of SST dies coupled between the first and second terminals with at least a pair of the SST dies being coupled in parallel. The plurality of SST dies can individually include a plurality of junctions coupled in series with an interconnection between each individual junction. Additionally, the individual SST dies can have a cross-connection contact coupled to the interconnection. In one embodiment, the array can further include a cross-connection between the cross-connection contacts on the pair of the SST dies.

Various embodiments of SST dies and solid state lighting (SSL) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.