H10H20/831

Light emitting device and light emitting device package

Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

LED lighting apparatus
09837392 · 2017-12-05 · ·

An LED lighting apparatus includes an LED substrate, a LED chip, a sealing resin member, and a reflecting face. The LED substrate has a main surface. The LED chip is mounted on the main surface of the LED substrate. The sealing resin member is made of a material that transmits light from the LED chip. The sealing resin member covers the LED chip. The sealing resin member has a shape bulging in the direction in which the main surface faces. The reflecting face surrounds the sealing resin member.

Display device
09837582 · 2017-12-05 · ·

A display device is provided. The display device includes a substrate and a light-emitting diode. The light-emitting diode includes first and second conductive-type semiconductor layers and a light-emitting layer. The second conductive-type semiconductor layer is adjacent to the substrate. The first conductive-type semiconductor layer includes a bulk portion and a reflection layer disposed over a side of the bulk portion. The bulk portion has a first surface away from the light-emitting layer and a second surface adjacent to the light-emitting layer. The second conductive-type semiconductor layer has a third surface adjacent to the light-emitting layer and a fourth surface away from the light-emitting layer. There is a specific relationship between the width of the first surface, the width of the light-emitting layer, the distance from the first surface to the fourth surface, and the distance from the first surface to the light-emitting layer.

BACKLIGHT UNIT USING MULTI-CELL LIGHT EMITTING DIODE
20170347418 · 2017-11-30 ·

A backlight unit includes a backlight module with a printed circuit board including blocks and MJT LEDs disposed on the blocks, respectively and a backlight control module generating a signal for drive control of each of the blocks, wherein each of the blocks comprises at least one MJT LED, and the backlight control module includes a drive controller for On/Off control and dimming control of each of the blocks.

Light emitting device and method of manufacturing the same
09831409 · 2017-11-28 · ·

Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes.

LED chip integrated with hybrid sensor and method of fabricating the same

The present invention relates to a light emitting diode (LED) chip, in which a hybrid sensor is formed in a nitride-based LED structure. A chip structure embedded with such a hybrid sensor functions as an LED light emitting sensor which can monitor environmental pollution while functioning as a lighting element at the same time and has an effect of being used as a variety of environment pollution sensors according to the type of an electrode material.

Display device using semiconductor light emitting device and method for manufacturing the same
09831222 · 2017-11-28 · ·

A display device including a substrate; a first electrode on the substrate; and a plurality of semiconductor light emitting devices disposed on the first electrode; and a second electrode. Further, at least one of the semiconductor light emitting devices includes a first conductive semiconductor layer; a second conductive semiconductor layer overlapping with the first conductive semiconductor layer; and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer. In addition, an upper surface of the second conductive layer includes a recess groove having a bottom portion and a lateral wall portion formed along an edge of the second conductive semiconductor layer, and the second electrode extends partially on the bottom portion of the groove and on the lateral wall portion.

LIGHT-EMITTING-DEVICE PACKAGE AND PRODUCTION METHOD THEREFOR

A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.

Light emitting diode chip and fabrication method

A light emitting diode chip includes an epitaxial layer with a plurality of recess portions and protrusion portions over the top layer; a light transmission layer, located between top ends of adjacent protrusion portions and forming holes with the recess portions. The light transmission layer has a horizontal dimension larger than a width of the top ends of two adjacent protrusion portions, and serves as current blocking layer; a current spreading layer covering the surface of the light transmission layer and the surface of an epitaxial layer of a non-mask light transmission layer. As the refractive index of the light transmission layer is between those of the epitaxial layer and the hole, indicating a difference of refractive index between the light transmission layer and the epitaxial layer, the probability of scattering generated when light from a luminescent layer emits upwards can be increased, thus avoiding light absorption by electrodes and improving light extraction efficiency.

Display with surface mount emissive elements

A surface mount emissive element is provided with a top surface and a bottom surface. A first electrical contact is formed exclusively on the top surface, and a second electrical contact is formed exclusively on the top surface. A post extends from the bottom surface. An emissive display is also provided made from surface mount emissive elements and an emissions substrate. The emissions substrate has a top surface with a first plurality of wells formed in the emissions substrate top surface. Each well has a bottom surface, sidewalls, a first electrical interface formed on the bottom surface, and a second electrical interface formed on the bottom surface. The emissions substrate also includes a matrix of column and row conductive traces forming a first plurality of column/row intersections, where each column/row intersection is associated with a corresponding well. A first plurality of emissive elements populates the wells.