An image sensor includes a semiconductor substrate having a first surface and a second surface. The first surface includes an element isolation trench. An element isolation layer is arranged inside the element isolation trench. The element isolation layer defines an active region. A gate electrode is arranged on the first surface of the semiconductor substrate. An interlayer insulating layer is arranged on the first surface of the semiconductor substrate and covers the gate electrode. A ground contact is configured to penetrate the element isolation layer and the interlayer insulating layer and contacts the semiconductor substrate. A color filter is arranged on the second surface of the semiconductor substrate.

Arrays of integrated analytical devices and their methods for production are provided. The arrays are useful in the analysis of highly multiplexed optical reactions in large numbers at high densities, including biochemical reactions, such as nucleic acid sequencing reactions. The devices allow the highly sensitive discrimination of optical signals using features such as spectra, amplitude, and time resolution, or combinations thereof. The devices include an integrated diffractive beam shaping element that provides for the spatial separation of light emitted from the optical reactions.

A solid-state imaging device includes a second image sensor having an organic photoelectric conversion film transmitting a specific light, and a first image sensor which is stacked in layers on a same semiconductor substrate as that of the second image sensor and which receives the specific light having transmitted the second image sensor, in which a pixel for focus detection is provided in the second image sensor or the first image sensor. Therefore, an AF method can be realized independently of a pixel for imaging.

The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.

An image sensor includes: a semiconductor substrate including a pixel array region, the pixel array region including a center pixel region and an edge pixel region enclosing the center pixel region in a plan view; color filter groups on the pixel array region, each color filter group of the color filter groups including color filters arranged in a same number of rows and columns; and micro lenses covering the color filter groups, respectively, wherein the color filter groups include center color filter groups on the center pixel region and edge color filter groups on the edge pixel region, and at least two color filters of the color filters in each of the edge color filter groups have thicknesses that are different from each other.

A semiconductor device and a semiconductor package, the device including a first buffer dielectric layer on a first dielectric layer; a second dielectric layer and a second buffer dielectric layer sequentially disposed on the first buffer dielectric layer, the second buffer dielectric layer being in contact with the first buffer dielectric layer; and a pad interconnection structure that penetrates the first buffer dielectric layer and the second buffer dielectric layer, wherein the pad interconnection structure includes copper and tin.

A light detection device of an embodiment of the present disclosure includes: a filter including a metal film provided with a plurality of openings each having a size equal to or less than a wavelength of incident light; a barrier metal provided on a corner of the filter, and a photoelectric converter that converts light entering through the filter into an electric charge.

An image sensor includes a sensor substrate including a plurality of pixels that are two-dimensionally disposed in a first direction and a second direction; and a nano-photonic lens array including a first pixel corresponding region, a second pixel corresponding region, a third pixel corresponding region, and a fourth pixel corresponding region respectively corresponding to the plurality of pixels, wherein each of the first to fourth pixel corresponding regions includes a plurality of nano-structures that are arranged to condense light of a first wavelength, light of a second wavelength, and light of a third wavelength respectively onto the plurality of pixels, and in each of the second pixel corresponding region and the fourth pixel corresponding region, cross-sectional area sizes of the plurality of nano-structures are distributed asymmetrically in the first direction, the second direction, and a first diagonal direction, and are distributed symmetrically in a second diagonal direction that crosses the first diagonal direction.

A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.