An image display device includes a drive circuit substrate, micro LED elements, and a wavelength conversion layer that converts excitation light emitted from the micro LED elements and that emits converted long-wavelength light to a side opposite to the drive circuit substrate, the micro LED elements and the wavelength conversion layer being sequentially stacked on the drive circuit substrate. The micro LED elements include a first multilayer film that reflects the long-wavelength light converted by the wavelength conversion layer.

A device for facilitating emitting light is disclosed. Accordingly, the device may include at least one substrate, at least one first layer configured to be placed on the at least one substrate. Further, the at least one first layer may be an n-type nitride based semiconductor layer. At least one second layer configured to be placed on the at least one first layer. Further, the at least one second layer may be a nitride based semiconductor. At least one third layer configured to be placed on the at least one second layer. Further, the at least one third layer may be a p-type semiconductor layer. At least one fourth layer configured to be placed on the at least one third layer. Further, the at least one fourth layer may include at least one transparent electrode.

The present disclosure relates to a micro light emitting diode (LED) display device including a substrate having a plurality of thin film transistors thereon; a plurality of micro light emitting devices (LEDs) on an upper surface of the substrate, the micro LEDs each having a protecting film provided with a first contact hole to expose a portion of an upper surface of a corresponding micro LED; at least one insulating layer covering the micro LED, the insulating layer provided with a second contact hole to expose a portion of the upper surface of the corresponding micro LED; and a connection electrode in the first contact hole and the second contact hole configured to transfer signals to the micro LED, wherein the first contact hole is larger than the second contact hole.

A method for manufacturing a light emitting device can include providing a substrate, forming a first active layer including a first electrical polarity, forming a light emitting region, forming a second active layer including a second electrical polarity, and forming a first electrical contact layer. The light emitting region can emit light with a target wavelength between 200 nm and 300 nm. A plurality of mesas can be formed, where each mesa can include a portion of the first active layer, the light emitting region, the second active layer, and the first electrical contact layer. A mesa width of each mesa is smaller than twice a current spreading length of the light emitting device. In some cases, the current spreading length is from 400 nm to 5 microns. In some cases, a distance separating the mesas from 1 micron to 10 microns.

A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The active layer emits light having at least two peak wavelengths at a single chip level.

An array of semiconductor structures is grown on a hetero-interface barrier layer by forming successive semiconductor layers within holes formed through a dielectric layer deposited above the hetero-interface barrier layer. The hetero-interface forms a two dimensional charge carrier gas. Each semiconductor structure is grown within one of the holes and includes at least one LED active layer between an n-type semiconductor layer and a p-type semiconductor layer. The bottom one of the two semiconductor layers has the same conductivity type as the barrier layer on which it is formed. The hetero-interface is defined between the barrier layer and a buffer layer. The barrier layer and buffer layer can be formed from GaN, AlGaN, and/or InGaN of varying concentrations. The two dimensional charge carrier gas can be a 2D electron gas or a 2D hole gas.

An electronic device includes: a semiconductor layer; a first layer disposed on the semiconductor layer, including at least one of oxygen atoms and nitrogen atoms and having a first maximum thickness; a second layer, wherein the first layer is disposed between the second layer and the semiconductor layer, and the second layer has a second maximum thickness; and a third layer, wherein the second layer is disposed between the first layer and the third layer, the third layer has a third maximum thickness, and the second maximum thickness and the third maximum thickness are greater than the first maximum thickness, wherein the first layer comprises a first position and a second position, the first position is closer to the semiconductor layer than the second position, and a first oxygen atomic percentage at the first position is less than a second oxygen atomic percentage at the second position.

Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.

A light-emitting device includes doped layer arranged on a substrate. The doped layer is n-doped or p-doped. A multiple quantum well is arranged on the doped layer and includes a plurality of adjacent pairs of quantum wells and quantum barriers. An electron blocking layer is arranged on the multiple quantum well. The doped layer, the electron blocking layer, the quantum wells, and all of the quantum barriers except for the last quantum barrier include a first III-nitride alloy. The last quantum barrier includes a second III-nitride alloy that is different from the first III-nitride alloy. The second III-nitride alloy has a bandgap larger than a bandgap of the last quantum well and smaller than a bandgap of the electron blocking layer. An interface between the last quantum barrier and the electron blocking layer exhibits a polarization difference between 0 and 0.012 C/m.sup.2.

A device includes: an active layer provided in a first comb tooth region on an n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; an n-side contact electrode provided in a second comb tooth region on the n-type semiconductor layer; a p-side contact electrode provided in a third comb tooth region on the p-type semiconductor layer; a protective layer having a p-side pad opening provided in a fourth comb tooth region on the p-side contact electrode, having an n-side pad opening provided in a fifth comb tooth region on the n-side contact electrode, and made of a dielectric material; a p-side pad electrode connected to the p-side contact electrode in the p-side pad opening; and an n-side pad electrode connected to the n-side contact electrode in the n-side pad opening.