Light emitting assemblies comprise a plurality of Light Emitting Diode (LED) dies arranged and attached to common substrate to form an LED array having a desired optimum packing density. The LED dies are wired to one another and are attached to landing pads on the substrate for receiving power from an external electrical source via an interconnect device. The assembly comprises a lens structure, wherein each LED die comprises an optical lens disposed thereover that is configured to promote optimal light transmission. Each optical lens has a diameter that is between about 1.5 to 3 times the size of a respective LED die, and is shaped in the form of a hemisphere. Fillet segments are integral with and interposed between the adjacent optical lenses, and provide sufficient space between adjacent optical lenses so that the diameters of adjacent optical lenses do not intersect with one another.

The present disclosure discloses a display substrate, including a substrate, and a driver circuit, an insulation layer and a bonding electrode sequentially superposed on the substrate. The bonding electrode is configured to be connected to an anode and a cathode of a micro inorganic light-emitting diode chip to be bonded. The display substrate further includes an elastic layer sandwiched between the bonding electrode and the insulation layer, the elastic layer having an orthographic projection on the substrate covering at least an orthographic projection of the bonding electrode on the substrate. The present disclosure provides a display panel, including the above display substrate, and further including a micro inorganic light-emitting diode chip having an anode and a cathode thereof connected to the bonding electrode on the display substrate.

The invention pertains to the field of nanotechnology. The invention provides highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnSe.sub.1-xTe.sub.x core and ZnS and/or ZnSe shell layers. The nanostructures comprising a ZnSe.sub.1-xTe.sub.x core and ZnS and/or ZnSe shell layers display a low full width at half-maximum and a high quantum yield. The invention also provides methods of producing the nanostructures.

A display device can include a substrate including a plurality of pixels; a plurality of light emitting diodes disposed in each of the plurality of pixels; a color conversion member disposed over at least two light emitting diodes among the plurality of light emitting diodes in one pixel among the plurality of pixels; and a light shielding pattern disposed over at least one light emitting diode among the plurality of light emitting diodes in the one pixel for forming a black sub pixel that does not emit light outside of the display device. Also, each of the plurality of pixels includes a first sub pixel, a second sub pixel, a third sub pixel, and one or more black sub pixels.

A method for depositing patterned phosphor films comprises using a patterned polymer film as a mask to block phosphor deposition, or allow subsequent removal of deposited phosphor, from selected areas of a device surface covered by the polymer film. The method generally comprises disposing the patterned polymer film mask on the device, subsequently depositing the phosphor, and then removing the mask and any phosphor deposited on the mask from the device. The polymer film may be deposited in the desired mask pattern or patterned after deposition.

Disclosed are a semiconductor structure, a manufacturing method of a semiconductor structure, and a light-emitting device. The semiconductor structure includes: a light-emitting structure including a plurality of light-emitting units, where an insulating structure is disposed between adjacent two light-emitting units; and a light-control layer, disposed on a side of the light-emitting structure, including a plurality of light-control regions regularly disposed and a substrate structure disposed between adjacent two light-control regions, one light-control region corresponding to at least one light-emitting unit, where the substrate structure includes a growth substrate layer structure and an etching stop layer structure stacked along a direction away from the light-emitting structure.

Disclosed are a semiconductor structure and a manufacturing method for the semiconductor structure. The semiconductor structure includes a light-emitting structure; a light control layer disposed on a side of the light-emitting structure, including a plurality of light control regions regularly arranged and a substrate structure located between the plurality of light control regions; where the plurality of light control regions include a wavelength conversion structure, and the wavelength conversion structure includes a quantum dot and a porous structure adsorbed with the quantum dot. In the present disclosure, the plurality of light control regions and the substrate structure are provided to ensure uniform light output, good directionality, high light extraction rate, and avoidance of light crosstalk in each light control region. The porous structure is utilized to adsorb the quantum dot and achieve a full color display, thereby improving resolution, simplifying a manufacturing process and reducing costs.

A light-emitting device is provided. The light-emitting device includes a circuit board and a connection board disposed on the circuit board and having a first pad, a second pad, and a third pad. The light-emitting device also includes a first light-emitting element disposed on the connection board and having a first electrode and a second electrode and a second light-emitting element adjacent to the first light-emitting element and having a third electrode and a fourth electrode. The light-emitting device further includes a light-converting layer disposed on the first light-emitting element and the second light-emitting element. The thermal expansion coefficient of the connection board is smaller than the thermal expansion coefficient of the circuit board.

A wavelength conversion unit arrangement includes a carrier and a wavelength conversion unit. The wavelength conversion unit includes a wavelength conversion layer and a filter layer, and the filter layer attaches the wavelength conversion unit to the carrier. The filter layer has a first surface facing the carrier and a second surface opposite the first surface, and the first surface and the second surface have different textures.

An oxide fluorescent material has a composition represented by the following formula (1).

(Ga.sub.1-uM.sup.1.sub.u).sub.2(Ge.sub.1-vM.sup.2.sub.v).sub.wO.sub.x:Cr.sub.y,M.sup.3.sub.z(1), wherein M.sup.1 represents at least one element selected from the group consisting of Al, Sc, and In; M.sup.2 represents at least one element selected from the group consisting of Si, Ti, Zr, Sn, and Hf, M.sup.3 represents at least one element selected from the group consisting of Ni, Eu, Fe, Mn, Nd, Tm, Ho, Er, and Yb; and u, v, w, x, y, and z satisfy 0u1.0, 0v0.5, 1.0w3.0, 5x9, 0.005y1.0, and 0z0.5, respectively.