A method of transferring a micro light emitting diode (LED) to a pixel array panel includes transferring the micro LED by spraying using an inkjet method, wherein the micro LED comprises an active layer comprising a first portion emitting light in a first direction and a second portion emitting the light in a second direction different from the first direction.

An optical part includes a quantum dot film layer, a lower transparent film layer, and an outer protective film. The quantum dot film layer includes an upper surface, a lower surface, and a lateral surface. The lateral surface connects the upper surface with the lower surface, and the quantum dot film layer is a film containing light emitting semiconductor nanoparticles. The lower transparent film layer is disposed on the lower surface of the quantum dot film layer. The outer protective film directly or indirectly covers the upper surface of the quantum dot film layer, and extends to cover the lateral surface of the quantum dot film layer.

Disclosed are a light-emitting device with quantum dots and a manufacturing method thereof. The light-emitting device includes a light-emitting diode chip, a transparent barrier layer, a quantum dot film, and a transparent protective layer. The transparent barrier layer is disposed on the light-emitting diode chip. The quantum dot film is disposed on the transparent barrier layer, such that the light-emitting diode chip is separated from the quantum dot film by the transparent barrier layer. The transparent protective layer is disposed on the quantum dot film, such that the quantum dot film is encapsulated between the transparent barrier layer and the transparent protective layer.

A method for manufacturing a light-emitting device includes preparing a wafer in which multiple semiconductor parts are arranged on a first surface of a first substrate, disposing a resin member covering the first surface and the multiple semiconductor parts, disposing a second substrate on the resin member, removing the first substrate, forming a dielectric layer continuously covering upper surfaces of the multiple semiconductor parts and an upper surface of the resin member, causing an upper surface of the dielectric layer to approach flat, selectively removing the dielectric layer located on the upper surface of the resin member, and directly bonding a wavelength conversion member to the upper surface of the dielectric layer.

A radiation-emitting component includes a semiconductor chip which, in operation, emits electromagnetic radiation of a first wavelength range from a radiation exit surface, and a conversion element on a cover surface of the semiconductor chip comprising the radiation exit surface. The conversion element contains a matrix material and phosphor particles embedded therein which convert electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range. The conversion element has a bearing surface which is equal to or smaller than the cover surface of the semiconductor chip, and the bearing surface is completely in direct contact with the cover surface of the semiconductor chip. A method for producing a radiation-emitting component is further disclosed.

A method for manufacturing an image display device includes: providing a second substrate that includes a first substrate, and a semiconductor layer grown on the first substrate, the semiconductor layer including a light-emitting layer; providing a third substrate including: a circuit including a circuit element formed on a light-transmitting substrate, a first insulating film covering the circuit, and a conductive layer including a light-reflective part formed on the first insulating film; bonding the semiconductor layer to the third substrate; forming a light-emitting element from the semiconductor layer; forming a second insulating film covering the conductive layer, the light-emitting element, and the first insulating film; forming a via extending through the first and second insulating films; and electrically connecting the light-emitting element and the circuit element by the via.

In an embodiment a radiation emitting device includes a semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface and a potting comprising a matrix material and a plurality of nanoparticles, wherein a concentration of the nanoparticles in the matrix material decreases starting from the radiation exit surface of the semiconductor chip so that a refractive index of the potting decreases starting from the radiation exit surface of the semiconductor chip, and wherein the nanoparticles are coated with a shell.

An electronic device including a first substrate, an isolating layer, a porous structure, a light conversion unit, and a color filter unit is provided. The isolating layer is disposed on the first substrate and has an opening. The porous structure is disposed in the opening and has a plurality of pores arranged irregularly. The light conversion unit is disposed in the pores. The color filter unit is disposed between the first substrate and the porous structure, and the color filter unit comprises a color filter pattern overlapped with the light conversion unit in a normal direction of the first substrate.

The present disclosure provides a light-emitting device and a manufacturing method thereof, a taillight and a vehicle. The light-emitting device includes at least one light-emitting element located on one side of a backplane, wherein a wavelength of a first light emitted by each light-emitting element is 500 nm to 580 nm; a wavelength conversion layer located on one side of the at least one light-emitting element away from the backplane and configured to emit a second light with a different color from the first light under the excitation of the first light; and a first optical structure located on one side of the wavelength conversion layer away from the backplane, and including one or more optical elements, each of which is configured to focus the second light along a direction perpendicular to the backplane.

This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.