In at least one embodiment, the method is designed for producing a light-emitting diode display (1). The method comprises the following steps: A) providing a growth substrate (2); B) applying a buffer layer (4) directly or indirectly onto a substrate surface (20); C) producing a plurality of separate growth points (45) on or at the buffer layer (4); D) producing individual radiation-active islands (5), originating from the growth points (45), wherein the islands (5) each comprise an inorganic semiconductor layer sequence (50) with at least one active zone (55) and have a mean diameter, when viewed from above onto the substrate surface (20), between 50 nm and 20 m inclusive; and E) connecting the islands (5) to transistors (6) for electrically controlling the islands (5).

A radiation-emitting optoelectronic device is provided. The radiation-emitting optoelectronic device includes a semiconductor chip that, when the device is in operation, emits primary radiation of a wavelength of between 600 nm and 1000 nm. A conversion element includes a conversion material comprising ions of one or more metals selected from a group comprising La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Cr, Pb and Mg. The conversion material converts the primary radiation emitted by the semiconductor chip virtually completely into secondary radiation of a wavelength of between 1000 nm and 6000 nm.

Provided is an LED production method that can produce a great number of high-quality LEDs at low production cost. A binder-rich layer is formed on LEDs to increase the adhesiveness between the LEDs and a substrate; a phosphor layer or phosphor-rich layer is formed over the layer with a mask put on the layer; and the phosphor or a mixture of the phosphor and binder on the mask is recovered and reused.

A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.

To provide an LED lighting apparatus and a method for manufacturing the same that can improve the bonding strength between an aluminum substrate and a printed wiring substrate. An LED lighting apparatus and a method for manufacturing the same, the LED lighting apparatus includes an aluminum substrate, a plurality of reflectivity-enhanced layers formed on the aluminum substrate, an LED device bonded on said plurality of reflectivity-enhanced layers, a printed wiring substrate bonded onto a region on the aluminum substrate other than a region where the plurality of reflectivity-enhanced layers are formed, a wire for connecting between the printed wiring substrate and the LED device, a frame member formed so as to surround said LED device, and a phosphor resin deposited over a region inside the frame member.

A light emitting diode package includes a light emitting diode which emits a first light having a first color; a body member defining a planar part thereof on which the light emitting diode is mounted, and a side part thereof which is extended upward from the planar part, the planar and side parts defining an inner cavity in which the light emitting diode is disposed; and a filling member which fills the inner cavity and includes a base part in which a plurality of first phosphors is dispersed, the plurality of first phosphors absorbing a portion of the first light and generating a second light having a second color different from the first color. The body member which defines the planar and side parts thereof has a third color different color from the second color, and the body member having the third color absorbs light having the second color.

A method of making an LED device and an LED device using a high-silica, fully-sintered glass substrate is provided. The high-silica substrate is at least 99% silica and is thin, such as less than 200 m in thickness. A phosphor containing layer is deposited on to the substrate and is laser sintered on the substrate such that a portion of the sintered phosphor layer embeds in the material of the substrate.

A method of manufacturing a light emitting device includes: mounting at least one light emitting element on a support member with a first surface of the light emitting element facing upward; applying an adhesive to the first surface of the light emitting element by holding the support member and dipping the first surface of the light emitting element in the adhesive; and disposing a light-transmissive member on the first surface of the light emitting element via the adhesive.

A light emitting device includes a base member; a light emitting element mounted on the base member; a light-transmissive member that covers an upper surface of the light emitting element, and is substantially rectangular in a plan view; and a light reflecting member that covers a lateral surface of the light-transmissive member, the light reflecting member having a substantially rectangular frame shape in a plan view. A width of the light reflecting member is smaller along a short side of the light-transmissive member than along a long side of the light-transmissive member. A height of the light reflecting member is smaller along the short side of the light-transmissive member than along the long side of the light-transmissive member at a position separated from an outer edge of the light reflecting member by a predetermined distance.

The present invention relates to a primary particle comprised of a primary matrix material containing a population of semiconductor nanoparticles, wherein each primary particle further comprises an additive to enhance the physical, chemical and/or photo-stability of the semiconductor nanoparticles. A method of preparing such particles is described. Composite materials and light emitting devices incorporating such primary particles are also described.