A photoelectric conversion device according to an embodiment of the present disclosure includes an avalanche photodiode, a pulse generation unit that converts an output from the avalanche photodiode into a pulse signal, a pulse count unit that counts the pulse signal and outputs a pulse count value, a time count unit that outputs a time count value indicating a time from the start of operation of the pulse generation unit, an output unit that, when the pulse count value does not exceed a threshold value, outputs the pulse count value, and when the pulse count value exceeds the threshold value, ends counting in the pulse count unit and outputs the time count value at the time of the pulse count value exceeding the threshold value, and a threshold calculation unit that calculates the threshold value using the time count value.

An apparatus includes a photodiode that performs avalanche multiplication, a recharging circuit, a control signal generating circuit that generates a control signal to control the recharging circuit, a count pulse generating circuit that generates a pulse signal from a signal output from the photodiode, and a counter that counts the pulse signal output from the count pulse generating circuit. The control signal generating circuit is configured to output, based on a clock signal and a mask signal, the control signal having a first period and the control signal having a second period longer than the first period. In a case where a counted value of the counter reaches a threshold, the signal to be output from the control signal generating circuit can be switched from the control signal having the first period to the control signal having the second period.

A photoelectric conversion apparatus is provided. The apparatus includes a first substrate including an avalanche photodiode, a second substrate, a third substrate, and a temperature detection element having an output characteristic dependent on temperature. A signal processing circuit configured to process a signal output from the avalanche photodiode is arranged in at least parts of the second substrate and the third substrate, the first substrate, the second substrate, and the third substrate are stacked such that the second substrate is arranged between the first substrate and the third substrate, and the temperature detection element is arranged in one of the first substrate and the second substrate.

Various embodiments of a novel structure of a Ge/Si avalanche photodiode with an integrated heater, as well as a fabrication method thereof, are provided. In one aspect, a doped region is formed either on the top silicon layer or the silicon substrate layer to function as a resistor. When the environmental temperature decreases to a certain point, a temperature control loop will be automatically triggered and a proper bias is applied along the heater, thus the temperature of the junction region of a Ge/Si avalanche photodiode is kept within an optimized range to maintain high sensitivity of the avalanche photodiode and low bit-error rate level.

A sensing device includes a first array of sensing elements, which output a signal indicative of a time of incidence of a single photon on the sensing element. A second array of processing circuits are coupled respectively to the sensing elements and comprise a gating generator, which variably sets a start time of the gating interval for each sensing element within each acquisition period, and a memory, which records the time of incidence of the single photon on each sensing element in each acquisition period. A controller controls the gating generator during a first sequence of the acquisition periods so as to sweep the gating interval over the acquisition periods and to identify a respective detection window for the sensing element, and during a second sequence of the acquisition periods, to fix the gating interval for each sensing element to coincide with the respective detection window.

An optical module includes: an avalanche photodiode; a power supply terminal; a self bias resistor connected between a cathode of the avalanche photodiode and the power supply terminal; a grounding terminal; and a surge preventing Zener diode having a cathode connected to a connection point between the power supply terminal and the self-bias resistor and an anode directly connected to the grounding terminal.

A light receiver (10, 50) having a plurality of avalanche photo diode elements (10, 12a-c) which are biased with a bias voltage greater than a breakthrough voltage and are thus operated in a Geiger mode in order to trigger a Geiger current upon light reception, and having a signal detection circuit (50) for reading out the avalanche photo diode elements (10, 12a-c), wherein the signal detection circuit (50) comprises an active coupling element (52) having an input (54) connected to the avalanche photo diode elements (10, 12a-c) and an output (56), the active coupling element (52) mapping the Geiger current at the input (54) to a measuring current corresponding to the Geiger current in its course and level, wherein the input (54) forms a virtual short-circuit for the Geiger current with respect to a potential (ground, U.sub.BE; U.sub.constU.sub.BE), and the output (56) is decoupled from the input (54).

A method of operating an avalanche photodiode includes providing an avalanche photodiode having a multiplication region capable of amplifying an electric current when subject to an electric field. The multiplication region, in operation, has a first ionization rate for electrons and a second, different, ionization rate for holes. The method also includes applying the electric field to the multiplication region, receiving a current output from the multiplication region, and varying the electric field in time, whereby a portion of the current output is suppressed.

An integrated photodetecting semiconductor optoelectronic component for measuring the intensity of each of the two colour constituents of dichromatic light irradiating the optoelectronic component includes a first SPAD and a second SPAD that detect photons over a broad range of wavelengths. The component also includes a semiconductor optical longpass filter that at least partially covers an active surface area of the first SPAD. The longpass filter is permissive to a first one of the two colour constituents of the dichromatic light and blocking the second one of the two colour constituents of the dichromatic light. The component further includes electronic circuitry for the readout and processing of detection signals delivered by the first and second SPAD. The electronic circuitry is adapted to provide a first intensity output signal and a second intensity output signal via a differential analysis based on the detection signals delivered by the first and second SPAD.

In a light detection device, switches are connected in parallel to each other. Each of the switches is connected to an APD. A read line electrically connects the switch and a signal processor to each other. The switch is configured such that a second terminal is connected to the read line and a voltage greater than or equal to a breakdown voltage is applied to the APD in a conductive state. The switch is configured such that the second terminal is not connected to the read line and a voltage greater than or equal to a breakdown voltage is applied to the APD in the conductive state. The switch is configured such that the second terminal is not connected to the read line and a voltage less than a breakdown voltage is applied to the APD in the conductive state.