A photosensor includes a plurality of avalanche photodiodes (APD) provided on a first main surface, a first isolation region that is provided on the first main surface and electrically separates the plurality of APDs from one another in a first direction, and a second isolation region that is provided on the first main surface and electrically separates the plurality of APDs from one another in a second direction different from a direction of the first isolation region. The first isolation region and the second isolation region are depleted. At least one of the first isolation region or the second isolation region is terminated at a first connection portion at which the first isolation region and the second isolation region are connected.

A segmented optoelectronic semiconductor package may help to alleviate stresses resulting from bending that can cause a mechanical defect (e.g., crack) in a detector circuit. The bending can result from thermal growth/shrinkage of parts used in the optical electronic package and may be more pronounced for high aspect ratio detector circuits. The segmentation of the disclosed semiconductor package can create seams that allow the parts to flex without breaking. As a result, the disclosed semiconductor package may facilitate high aspect ratio optical detection over a wide temperature range.

In a light detection device, switches are connected in parallel to each other. Each of the switches is connected to an APD. A read line electrically connects the switch and a signal processor to each other. The switch is configured such that a second terminal is connected to the read line and a voltage greater than or equal to a breakdown voltage is applied to the APD in a conductive state. The switch is configured such that the second terminal is not connected to the read line and a voltage greater than or equal to a breakdown voltage is applied to the APD in the conductive state. The switch is configured such that the second terminal is not connected to the read line and a voltage less than a breakdown voltage is applied to the APD in the conductive state.

The present invention relates to a laser scanner, comprising a housing, a laser transmitter including a transmission aperture for a transmission beam, a laser receiver for a reception beam, and a beam deflection device in the form of a mirror pyramid, the pyramid axis of which forms its axis of rotation, and the pyramid sides of which each form a mirror facet The laser transmitter and the laser receiver are each directed at the mirror pyramid parallel to the axis of rotation of the mirror pyramid. The laser receiver comprises at least one converging lens arranged downstream of the mirror pyramid in the reception beam path. The converging lens, viewed in the direction of the axis of rotation, in its region of overlap with the mirror facets, is at least as large, in area comparison, as twice the largest of all mirror facets viewed in the direction of the axis of rotation.

A semiconductor package may include a line array of single-photon avalanche diodes (SPADs). The line array of single-photon avalanche diodes may be split between multiple silicon dice. Each silicon die may be overlapped by at least one lens to focus light away from gaps between the dice and towards the single-photon avalanche diodes. There may be one single-photon avalanche diode for each silicon die or multiple single-photon avalanche diodes for each silicon die. When there are multiple single-photon avalanche diodes for each silicon die, lenses may be formed over only the edge single-photon avalanche diodes.

A photoelectric conversion device includes a photoelectric conversion unit, a light value holding unit that holds light values based on signal charges generated during a first exposure period and a second exposure period having at least one of start timing and end timing different from that of the first exposure period, a comparison unit that compares the light value based on the signal charge generated during the first exposure period with the light value based on the signal charge generated during the second exposure period, and a control unit that sets a third exposure period and a fourth exposure period having at least one of the start timing and end timing different from that of the third exposure period on the basis of a comparison result of the comparison unit. The third and fourth exposure periods are less than at least one of the first and second exposure periods.

In some embodiments, the present disclosure relates to a single-photon avalanche detector (SPAD) device including a silicon substrate including a recess in an upper surface of the silicon substrate. A p-type region is arranged in the silicon substrate below a lower surface of the recess. An n-type avalanche region is arranged in the silicon substrate below the p-type region and meets the p-type region at a p-n junction. A germanium region is disposed within the recess over the p-n junction.

An illustrative optical measurement system includes a light source configured to emit a light pulse directed at a target. The optical measurement system further includes a plurality of photodetectors configured to operate in accordance with an input bias voltage. The optical measurement system further includes a control circuit configured to identify a photodetector subset included in the plurality of photodetectors and that detects, while the input bias voltage has a first value, photons of the light pulse after the light pulse is scattered by the target. The control circuit is further configured to determine, based on the identifying of the photodetector subset, an overvoltage associated with the photodetector subset. The control circuit is further configured to update, based on the overvoltage, the input bias voltage for the plurality of photodetectors to have a second value.

Provided is a photodetector including: a photodetection element; a reset circuit that sets one end of the photodetection element to an initialization voltage after the photodetection element detects light, and that includes a variable current source capable of varying a current to be supplied to the one end of the photodetection element; and a control circuit that stepwise or continuously increases a current to be supplied to the one end of the photodetection element by using the variable current source until the one end of the photodetection element is set to the initialization voltage after the photodetection element detects light.

A device includes a semiconductor substrate having a surface. The device includes a first region in the substrate having a first dopant, a second region in the substrate having a second dopant, and a third region in the substrate having the first dopant. A first light absorption layer is on the surface and over a fourth region of the substrate between the first and second regions. The first light absorption layer is configured to absorb light of a particular wavelength. A second light absorption layer is on the surface and over a fifth region of the substrate between the second and third regions. The second light absorption layer is configured to absorb the light of the particular wavelength. At least one of lateral dimensions of the first and second light absorption layers or a lateral separation between the first and second light absorption layers is based on the particular wavelength.