A color image sensor including an array of pixels is formed in a semiconductor layer having a back side that receives an illumination. Insulated conductive walls penetrate into the semiconductor layer from the back side and separate the pixels from one another. For each pixel, a color pixel penetrates into from 5 to 30% of a thickness of the semiconductor layer from the back side and occupies at least 90% of the surface area delimited by the walls. An electrically-conductive layer extends from the lateral wall of the filter all the way to the walls.

Various optoelectronic modules are described that include an optoelectronic device (e.g., a light emitting or light detecting element) and a transparent cover. Non-transparent material is provided on the sidewalls of the transparent cover, which, in some implementations, can help reduce light leakage from the sides of the transparent cover or can help prevent stray light from entering the module. Fabrication techniques for making the modules also are described.

An optical apparatus including an optical functional layer having a high refractive index and a method of manufacturing the optical apparatus are provided. The optical functional layer includes a phase change material that has a first refractive index during heat treatment in a first temperature range and has a second refractive index, which is higher than the first refractive index, during heat treatment in a second temperature range that is higher than the first temperature range. The optical functional layer may be configured to have the second refractive index by using a micro-heater without having to be deposited at a high temperature.

A backside illuminated image sensor includes a semiconductor material with a plurality of photodiodes disposed in the semiconductor material, and a transfer gate electrically coupled to a photodiode in the plurality of photodiodes to extract image charge from the photodiode. The image sensor also includes a storage gate electrically coupled to the transfer gate to receive the image charge from the transfer gate. The storage gate has a gate electrode disposed proximate to a frontside of the semiconductor material, an optical shield disposed in the semiconductor material, and a storage node disposed between the gate electrode and the optical shield. The optical shield is optically aligned with the storage node to prevent the image light incident on the backside illuminated image sensor from reaching the storage node.

A chip package includes a chip, an insulating layer and a conductive layer. The chip includes a substrate, an epitaxy layer, a device region and a conductive pad. The epitaxy layer is disposed on the substrate, and the device region and the conductive pad are disposed on the epitaxy layer. The conductive pad is at a side of the device region and connected to the device region. The conductive pad protrudes out of a side surface of the epitaxy layer. The insulating layer is disposed below the substrate and extended to cover the side surface of the epitaxy layer. The conductive layer is disposed below the insulating layer and extended to contact the conductive pad. The conductive layer and the side surface of the epitaxy layer are separated by a first distance.

A complementary metal-oxide-semiconductor (CMOS) image sensor having a passivation layer is provided. The CMOS image sensor includes a sensing device substrate. Isolation structures are positioned within trenches of the sensing device substrate. The isolation structures are arranged along opposing sides of a plurality of image sensing devices. The CMOS image sensor also includes a passivation layer. The passivation layer includes passivation sidewalls arranged along the sidewalls of the isolation structures. A metallic grid overlies the passivation layer. The metallic grid includes a metal framework surrounding openings overlying the plurality of image sensing devices. The passivation layer further includes passivation section underlying the openings.

A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk.

This present invention provides a chip scale sensing chip package, comprising: a sensing chip with a first top surface and a first bottom surface opposite to each other, comprising: a sensing device adjacent to the first top surface; and a plurality of conductive pads adjacent to first top surface and the sensing device; a wiring layer formed on the first bottom surface and connected to each of the conductive pads; a dam having a supporter with a first opening and a spacer with a second opening formed on the first top surface, wherein the supporter is within the second opening and adjacent to the spacer, and the spacer is higher than the supporter by a predetermined distance d; a lens formed on the first top surface exposed by the first opening and above the sensing device; and an optical filter deposed on the supporter and above the lens.

A sensor package that includes a substrate with opposing first and second surfaces. A plurality of photo detectors are formed on or under the first surface and configured to generate one or more signals in response to light incident on the first surface. A plurality of contact pads are formed at the first surface and are electrically coupled to the plurality of photo detectors. A plurality of holes are each formed into the second surface and extending through the substrate to one of the contact pads. Conductive leads each extend from one of the contact pads, through one of the plurality of holes, and along the second surface. The conductive leads are insulated from the substrate. One or more trenches are formed into a periphery portion of the substrate each extending from the second surface to the first surface. Insulation material covers sidewalls of the one or more trenches.

An image-sensor structure is provided. The image-sensor structure includes a substrate having a first surface and a second surface and including a sensing area, a first metal layer formed above the first surface of the substrate and surrounding the sensing area, and a protection layer formed above the first surface of the substrate and overlying the sensing area and a part of the first metal layer to expose an exposed area of the first metal layer. The exposed area includes a first portion having a first width, a second portion having a second width, a third portion having a third width and a fourth portion having a fourth width.