Patent classifications
H10D86/451
Display panel and display device
Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor and a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.
Display device
According to one embodiment, a display device comprises a flexible substrate, a first insulating film disposed on the flexible substrate, a switching element disposed on the first insulating film, a signal wiring electrically connected with the switching element, a first organic film disposed on the signal wiring, a connection wiring disposed on the first organic film, a second organic film disposed on the connection wiring and a pad electrode disposed on the second organic film. The connection wiring is located between the first organic film and the second organic film and is in contact with the first organic film and the second organic film.
ELECTRONIC APPARATUS
An electronic apparatus includes a base substrate having an active area and a peripheral area adjacent to the active area. A plurality of pixels is disposed on the active area. The electronic apparatus also includes a plurality of power lines connected to the pixels. A power pad is disposed on a peripheral area and is configured to receive a power voltage. A power pattern is disposed on the peripheral area and connecting the power lines to the power pad. A plurality of sensing electrodes is disposed on the pixels in the active area. A plurality of sensing pads is disposed on the peripheral area and is electrically connected to the sensing electrodes. The sensing pads overlap with the power pattern.
DISPLAY DEVICE
A display device includes a substrate, a switching element, a first insulating layer, a first metal layer, and an energy-absorbing layer. The switching element is on the substrate and has a source/drain. The first insulating layer covers the switching element and has a first opening. The first metal layer is on the first insulating layer and extends through the first opening. The energy-absorbing layer is over the first metal layer. A first orthographic projection area of the first opening projected on the substrate is within a second orthographic projection area of the energy-absorbing layer projected on the substrate. A laser reflectivity of a material of the energy-absorbing layer is higher than a laser reflectivity of a material of the source/drain. A laser absorptivity of the material of the energy-absorbing layer is lower than a laser absorptivity of the material of the source/drain.
ELECTRONIC DEVICE
An electronic device includes a substrate, two adjacent transistors, a scan line, and two adjacent metal elements. The two adjacent transistors are disposed on the substrate and arranged along a first direction. A first transistor of the two adjacent transistors includes a first active element and a first conductive element electrically connected to the first active element. The two adjacent metal elements are disposed on the substrate and spaced apart from each other along the first direction. In a cross section view along a normal direction of the electronic device, a distance between the first active element and the substrate is greater than a distance between one of the two adjacent metal elements and the substrate. Projections of the first conductive element and the first active element on the substrate are located between projections of the two adjacent metal elements on the substrate.
DISPLAY DEVICE COMPRISING SEMICONDUCTOR LIGHT-EMITTING ELEMENTS
A display device according to an embodiment includes: a substrate; a plurality of assembly lines disposed on the substrate and including first assembly lines and second assembly lines which are alternately arranged; a planarization layer having a plurality of openings which overlap the plurality of assembly lines respectively; a plurality of light-emitting elements disposed in the plurality of openings respectively; and a plurality of conductive connection members disposed in the plurality of openings respectively to electrically connect the plurality of assembly lines and the plurality of light-emitting elements to each other, wherein the planarization layer protrudes more inwardly of the plurality of openings than one end of the respective assembly lines, and one end of the respective assembly lines is exposed from the planarization layer and comes into contact with the plurality of conductive connection members.
Display device and electronic device including the display device
The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.
Resin composition, resin sheet, cured film, method for producing cured film, semiconductor device, and display device
Provided is a resin composition which makes it possible to improve the resistance to a flux to be used in soldering and the resistance to reflow, and which, when used as a photosensitive resin composition, can be cured into a film capable of being imparted with such thick film processability that the film can be processed with high sensitivity even when the thickness of the film is as high as 15 m or more. A resin composition comprising (A) a resin having a structural unit represented by general formula (1) and/or general formula (2), (B) a phenolic resin and (C) an antioxidant agent, wherein the phenolic resin (B) contains a structure represented by general formula (3).
Light-emitting substrate and display device
A light-emitting substrate and a display device. The light-emitting substrate includes a base substrate, an electrode layer and a definition pattern layer; the electrode layer is at a side of the base substrate, and the definition pattern layer is at a side of the electrode layer away from the base substrate; the electrode layer includes a first electrode, and the definition pattern layer covers at least a part of the first electrode; the definition pattern layer includes a plurality of first openings, the plurality of first openings expose a same first electrode. Therefore, the light-emitting substrate can ensure the bonding success rate of the light-emitting substrate, and thus can further improve the product yield of the light-emitting substrate.
ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING SAME, AND LIQUID CRYSTAL PANEL
Provided is an array substrate. The array substrate us provided with a display region and a non-display region on a periphery of the display region, and includes: a base substrate; a pixel electrode and a thin-film transistor on a side of the base substrate, wherein the pixel electrode and the thin-film transistor are disposed in the display region, and the pixel electrode is disposed on a side, facing away from the base substrate, of the thin-film transistor; a first passivation layer between the pixel electrode and the thin-film transistor, wherein a plurality of first vias are defined in the first passivation layer; and a second passivation layer on a side, facing away from the base substrate, of the pixel electrode, wherein a plurality of second vias are defined in the second passivation layer.