An electronic circuit comprises a first resistor and a second resistor. The first resistor comprises: a first sheet (e.g. layer or film) of resistive (i.e. electrically resistive) material; and a first pair of conductive contacts, each arranged in electrical contact with the first sheet, and arranged such that a shortest resistive path in the first sheet between the first pair of contacts passes through the first sheet and has a length equal to a thickness of the first sheet. The second resistor comprises: a second sheet (e.g. layer or film) of resistive material; and a second pair of conductive contacts, each arranged in electrical contact with the second sheet, and arranged such that a shortest resistive path in the second sheet between the second pair of contacts passes along at least a portion of a length of the second sheet.

An electronic circuit comprises a first resistor and a second resistor. The first resistor comprises: a first sheet (e.g. layer or film) of resistive (i.e. electrically resistive) material; and a first pair of conductive contacts, each arranged in electrical contact with the first sheet, and arranged such that a shortest resistive path in the first sheet between the first pair of contacts passes through the first sheet and has a length equal to a thickness of the first sheet. The second resistor comprises: a second sheet (e.g. layer or film) of resistive material; and a second pair of conductive contacts, each arranged in electrical contact with the second sheet, and arranged such that a shortest resistive path in the second sheet between the second pair of contacts passes along at least a portion of a length of the second sheet.

An isolation transformer includes an insulation layer, a transformer, and a capacitor. The transformer includes first and second coils separated from each other in a thickness-wise direction of the insulation layer. The capacitor includes a first capacitor electrode and a second capacitor electrode. The insulation layer includes thin films and interlayer insulation films alternately stacked in the direction. The thin films include first and second thin films separated from each other in the direction. The interlayer insulation films include a first interlayer insulation film located next to the first thin film in the direction and a second interlayer insulation film located next to the second thin film in the direction. The first capacitor electrode is formed between the first thin film and the first interlayer insulation film. The second capacitor electrode is formed between the second thin film and the second interlayer insulation film.

An isolation transformer includes an insulation layer, a transformer, and a capacitor. The transformer includes first and second coils separated from each other in a thickness-wise direction of the insulation layer. The capacitor includes a first capacitor electrode and a second capacitor electrode. The insulation layer includes thin films and interlayer insulation films alternately stacked in the direction. The thin films include first and second thin films separated from each other in the direction. The interlayer insulation films include a first interlayer insulation film located next to the first thin film in the direction and a second interlayer insulation film located next to the second thin film in the direction. The first capacitor electrode is formed between the first thin film and the first interlayer insulation film. The second capacitor electrode is formed between the second thin film and the second interlayer insulation film.

A semiconductor structure is disclosed. The semiconductor structure includes back end layers that include a first metallization layer, a second metallization layer, and a scalable resistor between the first metallization layer and the second metallization layer. The semiconductor structure also includes front end layers.

A semiconductor structure is disclosed. The semiconductor structure includes back end layers that include a first metallization layer, a second metallization layer, and a scalable resistor between the first metallization layer and the second metallization layer. The semiconductor structure also includes front end layers.

This disclosure relates to embodiments that include an apparatus that may comprise an integrated circuit including a plurality of switched-capacitor partitions configured to be coupled to a plurality of pump capacitors. The plurality of switched-capacitor partitions includes a first partition and a second partition. The first partition includes a first switch and a second switch. The second partition includes a third switch and a fourth switch. The first partition and the second partition are disposed substantially symmetric with respect to an axis.

This disclosure relates to embodiments that include an apparatus that may comprise an integrated circuit including a plurality of switched-capacitor partitions configured to be coupled to a plurality of pump capacitors. The plurality of switched-capacitor partitions includes a first partition and a second partition. The first partition includes a first switch and a second switch. The second partition includes a third switch and a fourth switch. The first partition and the second partition are disposed substantially symmetric with respect to an axis.

An electronic component includes: a first inductor; a second inductor connected in parallel with the first inductor; and a stack for integrating the first inductor and the second inductor, the stack including a plurality of dielectric layers stacked together. Each of the first inductor and the second inductor is wound about an axis extending in a direction orthogonal to a stacking direction of the plurality of dielectric layers. The number of windings of the first inductor and the number of windings of the second inductor are different from each other.

An electronic component includes: a first inductor; a second inductor connected in parallel with the first inductor; and a stack for integrating the first inductor and the second inductor, the stack including a plurality of dielectric layers stacked together. Each of the first inductor and the second inductor is wound about an axis extending in a direction orthogonal to a stacking direction of the plurality of dielectric layers. The number of windings of the first inductor and the number of windings of the second inductor are different from each other.