A semiconductor device and a method for manufacturing the same is described. The semiconductor device includes a substrate, a first capacitor and a second capacitor. The first capacitor includes a first conductive layer, a first insulating layer and a second conductive layer. The first conductive layer is disposed on the substrate. The first insulating layer is disposed on the first conductive layer and has a first peripheral edge. The second conductive layer is disposed on the first insulating layer and has a second peripheral edge. The second capacitor includes a third conductive layer, a second insulating layer and the second conductive layer. The second insulating layer is disposed on the second conductive layer and has a third peripheral edge. The third conductive layer is disposed on the second insulating layer and has a fourth peripheral edge. The first, second, third and fourth peripheral edges are aligned with one another.

A semiconductor device includes a dielectric layer over a back end of line (BEOL) metal layer, a metallic resistive layer over the dielectric layer, a resistor comprising a metallic resistive film that is a first portion of the metallic resistive layer, and a metal-insulator-metal (MIM) capacitor. The insulator of the MIM capacitor comprises at least two layers including a first layer that is a second portion of the metallic resistive layer and a second layer that is the dielectric layer.

An improved power distribution network for an integrated circuit package that reduces the number of power supply pins that are used in the pin array and achieves better operating performance. In a preferred embodiment, the ratio of power supply pins to input/output (I/O) pins is in the range of approximately 1 to 24 to approximately 1 to 52. In this embodiment, the integrated circuit package comprises a substrate, an integrated circuit mounted on the substrate, a first decoupling capacitor mounted on the substrate, and a second decoupling capacitor formed in the integrated circuit. The package is formed by coupling a power supply pin to both the first and second capacitors by a low frequency path and a DC path, respectively, and the first and second capacitors are coupled by a high frequency path.

Embodiments disclosed herein include a capacitor apparatus. In an embodiment, the apparatus comprises a first metal layer and a first plate above the first metal layer, where the first plate is electrically conductive. In an embodiment, a second plate is above the first plate, where the second plate is electrically conductive, and a third plate is above the second plate, where the third plate is electrically conductive. In an embodiment, a second metal layer is above the third plate, and a first via is between the first metal layer and the second metal layer, where the first via contacts the first plate and the third plate. In an embodiment, a second via is between the first metal layer and the second metal layer, where the second via contacts the second plate, and a third via is between the first metal layer and the first plate.

A method of making a semiconductor device, includes: providing a first dielectric layer; sequentially forming a first metal layer, a dummy capacitor dielectric layer, and a second metal layer over the first dielectric layer; and using a single mask layer with two patterns to simultaneously recess two portions of the second metal layer so as to define a metal thin film of a resistor and a top metal plate of a capacitor.

A semiconductor package is provided and includes: a lower redistribution layer; a capacitor chip on the lower redistribution layer; an interposer chip on the lower redistribution layer, horizontally spaced apart from the capacitor chip, and connected to the lower redistribution layer; a mold layer surrounding the capacitor chip and the interposer chip; and an upper redistribution layer on a top surface of the mold layer and connected to the capacitor chip and the interposer chip. The capacitor chip includes a capacitor substrate and a capacitor device in the capacitor substrate, and the capacitor device includes: a top electrode pad; top electrodes on a bottom surface of the top electrode pad, a capacitor dielectric layer on the top electrodes with a uniform thickness; and a bottom electrode on the capacitor dielectric layer such as to commonly cover the top electrodes.

A method includes: providing a modulation circuit and a driving circuit, the modulation circuit configured to generate a temperature-dependent voltage and provide the same to the driving circuit; determined an operation mode of a memory array; providing a first current corresponding to a positive temperature coefficient by the driving circuit in response to the operation mode being a read operation on the memory array; and providing a second current corresponding to a negative temperature coefficient by the driving circuit in response to the operation mode being a write operation on the memory array.

A capacitor structure includes a first capacitor device structure, a first circuit layer, and at least one second capacitor device structure. The first capacitor device structure includes a first substrate and first capacitors. The first capacitors are located in the first substrate. The first circuit layer is located on the first capacitor device structure. The at least one second capacitor device structure is located on the first circuit layer. The second capacitor device structure includes a second substrate and second capacitors. The second capacitors are located in the second substrate. The first capacitors and the second capacitors are connected in parallel by the first circuit layer.

A light emitting device includes: a light emitting unit that includes plural light emitting elements; a transfer unit that transfers a signal for setting a light emitting element to turn into an on state among the plural light emitting elements; and a low-pass filter provided between a reference potential terminal of the transfer unit and an external reference potential.

An integrated circuit structure including a metal-insulator-metal (MIM) capacitor module and a thin-film resistor (TFR) module is provided. The MIM capacitor module includes a bottom electrode base formed in a lower metal layer, a bottom electrode formed in a dielectric region between the lower metal layer and an upper metal layer, an insulator formed over the bottom electrode, and a top electrode formed in the upper metal layer over the insulator. The bottom electrode includes a cup-shaped bottom electrode component and a bottom electrode fill component formed in an interior opening defined by the cup-shaped bottom electrode component. The TFR module includes a pair of metal heads formed in the dielectric region and a resistor element connected across the pair of metal heads. Each metal head includes a cup-shaped head component and a head fill component formed in an interior opening defined by the cup-shaped head component.