A light emitting device includes a semiconductor light emitting element; and a light reflective member having a multilayer structure and covering the side faces of the semiconductor light emitting element. The light reflective member includes: a first layer disposed on an inner, semiconductor light emitting element side, the first layer comprising a light-transmissive resin containing a light reflective substance, and a second layer disposed in contact with an outer side of the first layer, the second layer comprising a light-transmissive resin containing the light reflective substance at a lower content than that of the first layer.

Vertical solid-state transducers (SSTs) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.

A surface-mountable semiconductor component and a method for producing the same are disclosed. In an embodiment the component includes an optoelectronic semiconductor chip, first and second contact elements and a molded body, wherein the chip includes a semiconductor body having a semiconductor layer sequence with an active region provided for producing and/or receiving electromagnetic radiation and arranged between a first semiconductor layer and a second semiconductor layer, wherein the first contact elements are electrically conductively connected to the first semiconductor layer and the second contact elements are electrically conductively connected to the second semiconductor layer, wherein the molded body at least partially encloses the optoelectronic semiconductor chip, wherein the semiconductor component includes a mounting face formed by a surface of the molded body, and wherein the first and second contact elements protrudes through the molded body in a region of the mounting face.

The method of a wafer level packaging includes preparing a substrate, assembling a system on a first side of the substrate, and placing solder balls on a second side of the substrate. The soldering balls s fixed on to the second side of the substrate after the module has been assembled.

A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.

A light-emitting diode package including a body and leads. The body comprising a mounting surface. The light emitting diode package also includes a light emitting diode chip including a substrate and a plurality of light emitting cells disposed on the substrate and positioned to be spaced apart from each other, each of the plurality of light emitting cells comprising an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer. The light emitting diode package also includes a phosphor member disposed on the light-emitting diode chip and a distributed Bragg reflector disposed on the substrate and between the plurality of light emitting cells.

Provided are a light emitting device having a nitride quantum dot and a method of manufacturing the same. The light emitting device may include: a substrate; a nitride-based buffer layer arranged on the substrate; a plurality of nanorod layers arranged on the nitride-based buffer layer in a vertical direction and spaced apart from each other; a nitride quantum dot arranged on each of the plurality of nanorod layers; and a top contact layer covering the plurality of nanorod layers and the nitride quantum dots. A pyramid-shaped material layer may be further included between each of the plurality of nanorod layers and each of the nitride quantum dots. One or the plurality of nitride quantum dots may be arranged on each of the nanorod layers.

A method for manufacturing a light emitting device includes a) forming a first light confinement layer having a plurality of openings on or above one main surface of an oriented polycrystalline substrate, said oriented polycrystalline substrate including a plurality of oriented crystal grains; b) stacking an n-type layer, an active layer, and a p-type layer; c) forming a second light confinement layer on said first light confinement layer so that said second light confinement layer covers said plurality of first columnar structures and said second columnar structure; d) forming a transparent conductive film on said second light confinement layer; e) forming a pad electrode on said transparent conductive film; and f) forming a cathode electrode electrically connected to ends of said plurality of first columnar structures closer to said oriented polycrystalline substrate.

A method for manufacturing a light emitting device comprises a package preparation step of preparing a package having a recess in which a light emitting element is locatable, wherein the package includes a projection extending from an upper surface of the package, the projection at least partially surrounding the recess, a sealing resin forming step of filling said recess in which said light emitting element is located with a sealing resin, and providing said sealing resin higher than the height of said package, and a sealing resin cutting step of cutting the sealing resin such that an upper surface of the sealing resin is at a height that is substantially the same as a height of the upper surface of the package.

An ultraviolet LED having increased light extraction efficiency includes: a single crystal sapphire substrate on which an array of protruding portions are formed; an AlN crystal buffer layer formed on the sapphire substrate; and an ultraviolet light emitting layer, in contact with the buffer layer, formed into a layered stack including an n-type conductive layer, a recombination layer, and a p-type conductive layer, in order from the buffer layer. The buffer layer includes a pillar array section and an integration section wherein pillars in the array are connected with one another. Each pillar extends from a protruding portion of the sapphire substrate, in a direction normal to one surface thereof. The pillars are separated from one another in the plane of the surface by a gap G. Light emitted from the ultraviolet light emitting layer is extracted to the outside through the pillar array section and the sapphire substrate.