A method of manufacturing a light emitting device having a resin package which provides an optical reflectivity equal to or more than 70% at a wavelength between 350 nm and 800 nm after thermal curing, and in which a resin part and a lead are formed in a substantially same plane in an outer side surface, includes a step of sandwiching a lead frame provided with a notch part, by means or an upper mold and a lower mold, a step of transfer-molding a thermosetting resin containing a light reflecting material in a mold sandwiched by the upper mold and the lower mold to form a resin-molded body in the lead frame and a step of cutting the resin-molded body and the lead frame along the notch part.

High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm.sup.2.

Methods and apparatus for use in the manufacture of a display device including pixels. Each pixel includes a plurality of sub-pixels, each sub-pixel configured to provide light of a given wavelength. The method may include: performing, using a pick up tool (PUT), a first placement cycle comprising picking up first light emitting diode (LED) dies, and placing a first LED die on a substrate of the display device at a location corresponding to a sub-pixel the display device. The method further includes performing one or more subsequent placement cycles comprising picking up a second LED die, and placing the second LED die on the substrate of the display device at a second location corresponding to the sub-pixel of the display device. Multiple first and second LED dies may be picked and placed during each placement cycle to populate each pixel of the display device to provide redundancy of LED dies at each sub-pixel.

A chip substrate includes at least one insulation portion interposed between conductive portions. A cavity formed in a recessed shape from a region of an upper surface of the chip substrate exposes a top surface of a part of the at least one insulation portion. An insulation layer is coated on the upper surface of the chip substrate excluding the region of the cavity. A bump may be formed at a predetermined height within the cavity.

A system and method are provided for repairing an emissive display. Following assembly, the emissive substrate is inspected to determine defective array sites, and defect items are removed using a pick-and-remove process. In one aspect, the emissive substrate includes an array of wells, with emissive elements located in the wells, but not electrically connected to the emissive substrate. If the emissive elements are light emitting diodes (LEDs), then the emissive substrate is exposed to ultraviolet illumination to photoexcite the array of LED, so that LED illumination can be measured to determine defective array sites. The defect items may be determined to be misaligned, mis-located, or non-functional emissive elements, or debris. Subsequent to determining these defect items, the robotic pick-and-remove process is used to remove them. The pick-and-remove process can also be repurposed to populate empty wells with replacement emissive elements.

The present invention relates to a nano-scale light emitting diode (LED) electrode assembly emitting polarized light, a method of manufacturing the same, and a polarized LED lamp having the same, and more particularly, to a nano-scale LED electrode assembly in which partially polarized light close to light that is linearly polarized having one direction is emitted as an emitted light when applying a driving voltage to the nano-scale LED electrode assembly and also nano-scale LED devices are connected to a nano-scale electrode without defects such as an electrical short circuit while maximizing a light extraction efficiency, a method of manufacturing the same, and a polarized LED lamp having the same.

An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide LED dies that are joined to a carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area.

Provided is a light emitting device having a phosphor layer on a surface of a semiconductor light emitting element and reducing unevenness in light distribution color, and a method of manufacturing the same. A light emitting device 100 includes a light emitting element 20 with a supporting body which is composed of a semiconductor light emitting element 1 and a supporting body 10, and a phosphor layer 7 which continuously covers an upper surface and side surfaces of the semiconductor light emitting element 1, and side surfaces of the supporting body 10. The phosphor layer 7 is configured such that at least a lower portion of the side surface of the supporting body 10 is thinner than the upper surface and the side surface of the semiconductor light emitting element 1. Such a configuration of the phosphor layer can be formed by applying a spray-coating of a slurry containing phosphor particles and a thermosetting resin in a solvent on the semiconductor light emitting element 1 side of the light emitting element 20 which has the supporting body.

An optoelectronic component includes an optoelectronic semiconductor chip having a first surface on which a first electrical contact and a second electrical contact are arranged, wherein the first surface adjoins a molded body, a first pin and a second pin are embedded in the molded body and electrically conductively connect to the first contact and the second contact, and a protection diode is embedded in the molded body and electrically conductively connect to the first contact and the second contact.

A chip scale LED packaging method includes the following steps: clamping an upper mold with a plurality of through holes and a plate-shaped lower mold together; allowing bottoms of the plurality of through holes of the upper mold to be sealed by the plate-shaped lower mold to form a pattern of a plurality of grooves; placing chips one by one in corresponding through holes of the plurality of through holes; pouring encapsulation gel into each of the corresponding through holes; separating the upper mold from the plate-shaped lower mold after the encapsulation gel is cured and molded; and separating each cured and molded encapsulation gel from each of the corresponding through holes of the upper mold and taking each cured and molded encapsulation gel out of the upper mold to obtain an individual chip scale LED package.