A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material.

Light emitting devices and methods of integrating micro LED devices into light emitting device are described. In an embodiment a light emitting device includes a reflective bank structure within a bank layer, and a conductive line atop the bank layer and elevated above the reflective bank structure. A micro LED device is within the reflective bank structure and a passivation layer is over the bank layer and laterally around the micro LED device within the reflective bank structure. A portion of the micro LED device and a conductive line atop the bank layer protrude above a top surface of the passivation layer.

A method for producing a plurality of conversion elements (10) is specified, comprising providing a carrier substrate (1), introducing a converter material (3) into a matrix material (2), applying the matrix material (2) with the converter material (3) to individual regions (8) of the carrier substrate (1) in a non-continuous pattern, applying a barrier substrate (5) to the matrix material (2) and to the carrier substrate (1), and singulating the carrier substrate (1) with the matrix material (2) and the barrier substrate (5) into a plurality of conversion elements (10) along singulation lines (V), wherein the conversion elements (10) in each case comprise at least one of the regions (8) of the matrix material (2).

A method of manufacturing a light emitting device, includes: temporarily connecting light emitting elements to a wiring layer through connection members, the wiring layer being formed on a mounting board provided with reflectors; contacting a pressing surface of a press-bonding jig with upper surfaces of the light emitting elements and pressing the light emitting elements toward the mounting board while being heated at the same time to deform the connection members and to contact the pressing surface with tops of the reflectors; and connecting the light emitting elements to the wiring layer in a flip chip manner, wherein when the light emitting elements are temporarily connected to the wiring layer, a sum of height of a light emitting element of the light emitting elements and a connection member of the connection members is set to be larger than a height of a reflector of the reflectors.

A flexible display includes a plurality of pixel chips, chixels, provided on a flexible substrate. The chixels and the light emitters thereon may be shaped, sized and arranged to minimize chixel, pixel, and sub-pixel gaps and to provide a desired bend radius of the display. The flexible substrate may include light manipulators, such as filters, light converters and the like to manipulate the light emitted from light emitters of the chixels. The light manipulators may be arranged to minimize chixel gaps between adjacent chixels.

A carrier leadframe, including a frame body and a carrier, is provided. The frame body includes at least one supporting portion, and the carrier includes a shell and at least one electrode portion and is mechanically engaged with the frame body via the supporting portion. A method for manufacturing the carrier leadframe as described above, as well as a light emitting device made from the carrier leadframe and a method for manufacturing the device, are also provided. The carrier leadframe has carriers that are separate in advance and mechanically engaged with the frame body, thereby facilitating the quick release of material after encapsulation. Besides, in the carrier leadframe as provided, each carrier is electrically isolated from another carrier, so the electric measurement can be performed before the release of material. Therefore, the speed and yield of production of the light emitting device made from the carrier leadframe is improved.

A wafer-level method of fabricating optoelectronic modules performing a first vacuum injection technique, using a first vacuum injection tool, to surround optoelectronic devices laterally with a transparent overmold region, performing a replication technique to form a respective passive optical element on a top surface of each overmold region, and performing a second vacuum injected technique to form sidewalls laterally surrounding and in contact with sides of each overmold region. The replication technique and the second vacuum injection technique are performed using a combined replication and vacuum injection tool.

The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

A light-emitting device includes a light-emitting semiconductor component that emits first light in a first wavelength range during operation A wavelength conversion element converts the first light at least partly into second light in a second wavelength range is arranged in the beam path of the first light. The second wavelength range differs from the first wavelength range. The wavelength conversion element includes nanoparticles containing organic luminescent molecules in a basic material formed from an SiO2-based material. A method for producing a light-emitting device is furthermore specified.

The present invention relates to an LED metal substrate package, and particularly, to an LED metal substrate package having a heat dissipating structure, and a method of manufacturing same. The method comprises at least the steps of: forming at least one cavity having a groove of a predetermined depth in a metal substrate that is electrically separated by at least one vertical insulation layer, the cavity having one vertical insulation layer built in a floor thereof; treating all surfaces, except portions of the top surface of the metal substrate formed in the respective cavities, with shadow masking; removing an oxide film formed on the surface portions that have not been treated with masking; depositing an electrode layer on each of the surface portions of the oxide layer that have been removed; removing the shadow mask; performing Au/Sn soldering on the electrode layer and bonding an optical device chip; and wire bonding one electrode of the optical device, disposed on one side of the metal substrate with respect to each of the vertical insulation layers, through wires to the metal substrate disposed on the other side of each of the vertical insulation layers. The present invention forms solder using Au/Sn material, which has good heat dissipating characteristics and good bonding characteristics, on the electrode layer to bond an optical device chip, so as to have excellent heat dissipating performance compared to existing LED metal packages that use Ag epoxy.