A light emitting device is provide comprising a light emitting diode (LED) chip having a first main surface and a second main surface opposing the first main surface, and one or more side surfaces extending between the first main surface and second main surface. A plurality of electrodes is disposed on the first main surface. A wavelength conversion film is disposed on the second main surface. A mark is formed in the wavelength conversion film. The mark contains orientation information of the light emitting device, thereby enabling the light emitting device to be properly oriented on a receiving substrate.

A wavelength converting element (100), a light emitting module and a luminaire are provided. The wavelength converting element comprises a luminescent element (104) and a light transmitting cooling support (112). The luminescent element comprises a luminescent material (102) and a light transmitting sealing envelope (108) for protecting the luminescent material against environmental influences. The sealing envelope has a first thermal conductivity. The cooling support has a second thermal conductivity that is at least two times the first thermal conductivity. The cooling support comprises a first surface (113) and the sealing envelope comprises a second surface (105). The first surface and the second surface face towards each other. The first surface is thermally coupled to the second surface for allowing through the second surface a conduction of heat towards the cooling support to enable a redistribution of the heat generated in the luminescent element.

A light-emitting device includes a light-emitting element to emit a bluish light, and a yellowish phosphor to absorb the light emitted by the light-emitting element and produce a yellowish fluorescence. The yellowish phosphor comprises a single crystal phosphor comprising a composition represented by a compositional formula (Y.sub.1-a-bLu.sub.aCe.sub.b).sub.3+cAl.sub.5-cO.sub.12 (where 0a0.9994, 0.001b0.0067, 0.016c0.315. Commission International de l'Eclairage (CIE) chromaticity coordinates x and y of an emission spectrum obtained by using CIE 1931 color-matching function to satisfy a relationship of 0.4377x+0.7384y0.4377x+0.7504 when a peak wavelength of excitation light is 450 nm and temperature is 25 C. The single crystal phosphor is disposed off of the light-emitting element.

The present invention relates to an array-type double-side light-emitting device, a manufacturing method thereof and a double-side display device. The array-type double-side light-emitting device comprises: a first protective layer, a first fluorescent layer or quantum dot layer, an array of first transparent conductive layers, a first anisotropic conductive adhesive layer, an array of light-emitting wafers, a second anisotropic conductive adhesive layer, an array of second transparent conductive layers, a second fluorescent layer or quantum dot layer and a second protective layer, which are attached together sequentially.

A light emitting device comprises a light emitting element having an emission peak wavelength in a wavelength range of 430 nm to 470 nm, and a phosphor material comprising at least one type of phosphor selected from the group consisting of a first phosphor and a second phosphor, a third phosphor, a fourth phosphor, and a fifth phosphor having respective compositions represented by formulas (I)-(V):

(xs)MgO.(s/2)Sc.sub.2O.sub.3.yMgF.sub.2.uCaF.sub.2.(1t)GeO.sub.2.(t/2)M.sup.t.sub.2O.sub.3:zMn.sup.4+(I)

A.sub.2[M.sub.1-pF.sub.6]:pMn.sup.4+(II)

Lu.sub.3Al.sub.5O.sub.12:Ce(III)

(Sr,Ca).sub.8AlSiN.sub.3:Eu(IV)

(Ca,Sr,Ba).sub.8MgSi.sub.4O.sub.16(F,Cl,Br).sub.2:Eu(V)

In the formulas (I)-(V), M.sup.t is at least one of Al, Ga, and In; x, y, z, s, t, and u each satisfy 2x4, 0<y<1.5, 0<z<0.05, 0s0.5, 0<t<0.5, and 0u<1.5; A is at least one of K, Li, Na, Rb, Cs, and NH.sub.4; M is at least one type of element from group 4 elements and group 14 elements; and p satisfies 0<p<0.2.

A light-emitting device includes blue LED chips having a light emission peak wavelength of at least 430 nm and at most 470 nm and red LED chips having a light emission peak wavelength of at least 600 nm and at most 640 nm. The light-emitting device includes a yellow phosphor having a light emission peak wavelength of at least 500 nm and at most 580 nm and a red phosphor having a light emission peak wavelength of at least 640 nm and at most 670 nm. The light-emitting device emits white light through mixing of light emitted by each of the blue LED chips, the red LED chips, the yellow phosphor, and the red phosphor.

A variety of illumination devices for general illumination utilizing solid state light sources (e.g., light-emitting diodes) are disclosed. In general, an illumination device can include multiple light sources that are disposed on a substrate, where at least some of the light sources include a light-emitting diode (LED) and a corresponding inelastic scattering element surrounding, at least in part, the LED. The inelastic scattering elements can have different light emission spectra. The illumination device can further include a light-mixing element adapted to receive light that is output by the light sources, where, during operation of the illumination device, each inelastic scattering element inelastically scatters light emitted from its corresponding LED, and the light-mixing element mixes the light received from the inelastic scattering elements to provide the output light.

An LED module includes a submount having a face in a thickness direction thereof, an LED chip bonded to the face of the submount with a first bond, and a patterned wiring circuit electrically connected to the LED chip. The first bond transmits light emitted from the LED chip. The submount is a light-transmissive member having light diffusing properties, and a planar size larger than a planar size of the LED chip. The patterned wiring circuit is provided on the face of the submount so as not to overlap the LED chip. The submount is constituted by a plurality of light-transmissive layers which are stacked in the thickness direction and have different optical properties so that a light-transmissive layer of the plurality of light-transmissive layers which is farther from the LED chip is higher in reflectance in a wavelength range of the light emitted from the LED chip.

A method of fabricating a light-emitting device, the method including forming a first resin comprising a phosphor inside a cavity of a package body on which a light-emitting diode chip is mounted, measuring color coordinates of light emitted by combination of the light-emitting diode chip and the phosphor, and correcting the color coordinates by forming a second resin on the first resin. The first resin is not fully cured before measuring and correcting the color coordinates.

A package method includes steps of providing a light emitting module, a mold and a molding compound, wherein the light emitting module includes a substrate and at least one light emitting unit disposed on the substrate, the mold has at least one recess, and a side wall of the recess is parallel to a side surface of the light emitting unit; filling the recess with the molding compound; placing the substrate on the mold reversely, so that the light emitting unit is immersed into the recess and the molding compound directly encapsulates the light emitting unit; and heating and pressing the substrate and the mold, so as to solidify the molding compound.