An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide multiple LED dies that are joined to a single carrier die. The multiple LED dies on the single carrier die are connected in series and/or in parallel by interconnection in the LED dies and/or in the single carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area. Related devices and fabrication methods are described.

A light emitting device includes: a first support member having an opening; a second support member disposed in the opening of the first support member; an adhesive member disposed between the first and second support members; a first lead electrode disposed on the second support member; a second lead electrode disposed on at least one of the first and second support members; a light emitting chip disposed on the first lead electrode, the light emitting chip being electrically connected to the second lead electrode; and a conductive layer disposed under the second support member, wherein the first support member includes a resin material, the second support member includes a ceramic material, and the first lead electrode is disposed between the light emitting chip and the second support member.

Provided is an article for supporting an LESD comprising a dielectric layer having a first major surface with a conductive layer thereon and a second major surface, the dielectric layer having at least three vias extending from the second major surface to the first major surface, the conductive layer comprising at least first and second conductive features, wherein the first conductive feature is adjacent an opening of at least a first via and the second conductive feature is adjacent an opening of at least a second and a third via.

A method of manufacturing an optical communication device aligns an optical sub-assembly and an optical modulator on a carrier wafer. A first sub-mount supports the optical sub-assembly and a second sub-mount supports the optical modulator. Pre-defined break lines are placed on the carrier wafer to accommodate separation of the sub-assembly and the optical modulator. The first sub-mount connects the optical sub-assembly to a thermoelectric cooler by either an epoxy, a spacer layer, or both. The optical sub-assembly is aligned in the x/y/z directions relative to the second sub-mount in a position to match an optical height of the optical modulator in the z-direction, wherein the z-direction is a vertical direction relative to the carrier wafer.

An optoelectronic device includes a substrate having a first side, a second side opposite to the first side; a first optoelectronic unit formed on the first side of the substrate; a second optoelectronic unit formed on the first side of the substrate; a third optoelectronic unit formed on the first side of the substrate; a first electrode formed on and electrically connected to the first optoelectronic unit; a second electrode formed on and electrically connected to the second optoelectronic unit; a first pad formed on the first side of the substrate and electrically insulated from the third optoelectronic unit; and a plurality of conductor arrangement structures electrically connected to the first optoelectronic unit, the second optoelectronic unit, and the third optoelectronic unit.

A display tile structure includes a tile layer with opposing emitter and backplane sides. A light emitter having first and second electrodes for conducting electrical current to cause the light emitter to emit light is disposed in the tile layer. First and second electrically conductive tile micro-wires and first and second conductive tile contact pads are electrically connected to the first and second tile micro-wires, respectively. The light emitter includes a plurality of semiconductor layers and the first and second electrodes are disposed on a common side of the semiconductor layers opposite the emitter side of the tile layer. The first and second tile micro-wires and first and second tile contact pads are disposed on the backplane side of the tile layer.

The present invention provides a surface mounted light emitting apparatus which has long service life and favorable property for mass production, and a molding used in the surface mounted light emitting apparatus.

The surface mounted light emitting apparatus comprises the light emitting device 10 based on GaN which emits blue light, the first resin molding 40 which integrally molds the first lead 20 whereon the light emitting device 10 is mounted and the second lead 30 which is electrically connected to the light emitting device 10, and the second resin molding 50 which contains YAG fluorescent material and covers the light emitting device 10. The first resin molding 40 has the recess 40c comprising the bottom surface 40a and the side surface 40b formed therein, and the second resin molding 50 is placed in the recess 40c. The first resin molding 40 is formed from a thermosetting resin such as epoxy resin by the transfer molding process, and the second resin molding 50 is formed from a thermosetting resin such as silicone resin.

Disclosed are a light emitting device package. The light emitting device package includes a body having recess; a first lead frame including a first and second portions on a first region of the body; a second lead frame including a third and fourth portions on a second region of the body; a third lead frame between the first and second lead frame. The body has a length of the first direction greater than a width of the second direction, wherein the second portion of the first lead frame extends toward the second lead frame and has a small width, and wherein the fourth portion of the second lead frame extends toward the first lead frame. A first light emitting device is disposed on the first portion of the first lead frame and a second light emitting device is disposed on the third portion of the second lead frame.

A photonic waveguide for conducting light having first and second wavelengths, the waveguide comprising superposed first and second strips of light conducting semiconductor materials having first and second refractive indexes, wherein the second wavelength is shorter than the first wavelength and the second refractive index is higher than the first refractive index, wherein the width and height of the first strip of light conducting semiconductor material are such that the first strip of light conducting semiconductor material is adapted to confine an optical mode of the first wavelength and the width and height of the second strip of light conducting semiconductor material are such that the second strip of light conducting semiconductor material is adapted to confine an optical mode of the second wavelength but is too narrow to confine an optical mode of the first wavelength.

Standardized photon building blocks are packaged in molded interconnect structures to form a variety of LED array products. No electrical conductors pass between the top and bottom surfaces of the substrate upon which LED dies are mounted. Microdots of highly reflective material are jetted onto the top surface. Landing pads on the top surface of the substrate are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors in the interconnect structure are electrically coupled to the LED dies in the photon building blocks through the contact pads and landing pads. Compression molding is used to form lenses over the LED dies and leaves a flash layer of silicone covering the landing pads. The flash layer laterally above the landing pads is removed by blasting particles at the flash layer.