A light source module includes at least one light source emitting light, and a body supporting the light source. The body includes a heat sink supporting the light source on a top surface thereof, an electrical insulating part provided on the heat sink, and a plating part provided on the insulating part. The plating part includes a contact heat dissipation part contacting a portion of a bottom surface of the light source to receive heat generated from the light source, and a diffusion heat dissipation part connected to the contact heat dissipation part for receiving heat from the contact heat dissipation part to discharge the heat to the heat sink. Accordingly, quick heat dissipation is performed.

A light source module includes a light source for emitting light, and a heat sink for absorbing heat from the light source and dissipating the heat to the outside. The heat sink includes a mounting part for attaching the light source, and a heat dissipation fin for absorbing heat generated by the light source and dissipating the heat to the outside. An electrical insulating layer is provided on at least one surface of the heat sink, and an electrically conductive layer is provided in the insulating layer. The electrically conductive layer provides a path through which electric current is applied to the light source. A lens cover is provided over the light source.

Embodiments of the invention include a light emitting device, a first wavelength converting material, and a second wavelength converting material. The first wavelength converting material includes a nanostructured wavelength converting material. The nanostructured wavelength converting material includes particles having at least one dimension that is no more than 100 nm in length. The first wavelength converting material is spaced apart from the light emitting device.

Disclosed is a heat-dissipation device of an LED. The device comprises one or a plurality of heat conducting material silks; a heat-dissipation housing of an LED chip is contacted with one end of the heat conducting material silks through heat conducting materials or in a direct manner, in order to transmit the heat to the heat conducting material silks and heat the surrounding air through the heat conducting material silks; the heat conducting material silks are arranged in an air flowing pipeline, and the heat is taken away by the flowing air; the pipeline is made of insulation materials. The weight and size of the heat-dissipation device of the LED can be reduced exponentially under the condition that a proper working temperature for the LED chip is ensured, and the ground insulation of the whole heat-dissipation device can be ensured.

Provided is a flexible light emitting semiconductor device (26), such as an LED device, that includes a flexible dielectric layer (12) having first and second major surfaces and at least one via (10) extending through the dielectric layer from the first to the second major surface, with a conductive layer (19, 20, 18) on each of the first and second major surfaces and in the via. The conductive layer (18) in the via supports a light emitting semiconductor device (26) and is electrically isolated from the conductive layer (19) on the first major surface of the dielectric layer.

A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

The present disclosure relates to a wavelength conversion apparatus and a manufacturing method therefor. The wavelength conversion apparatus comprises a light-emitting layer, a reflective film, a sintering silver layer, and a substrate stacked successively. The light-emitting layer converts an excitation light into exit light having a different wavelength from the excitation light. The reflective film is plated on the light-emitting layer and used for reflecting the exit light emitted by the light-emitting layer. The sintering silver layer is connected to the light-emitting layer and the substrate; the sintering silver layer comprises flake silver particles connected with each other via surface contact; and the sintering silver layer is formed by sintering spherical silver nanoparticles and flake silver particles. The wavelength conversion apparatus is characterized by excellent thermal conductivity and high luminous efficiency.

A semiconductor light emitting device includes a semiconductor light source, a resin package surrounding the semiconductor light source, and a lead fixed to the resin package. The lead is provided with a die bonding pad for bonding the semiconductor light source, and with an exposed surface opposite to the die bonding pad The exposed surface is surrounded by the resin package in the in-plane direction of the exposed surface.

Provided is a component arrangement, including a carrier substrate; a spacer which is arranged on the carrier substrate so as to surround an installation space and has an outlet opening on a side facing away from the carrier substrate; an optical component arranged in the installation space; a contact connection which electrically conductively connects the optical component to external contacts arranged outside the installation space; a cover substrate which is arranged on the spacer and with which the outlet opening is covered in a light-permeable manner; and a light-reflecting surface which is formed on an anisotropically etched silicon component and is arranged in the installation space as an inclined surface at an angle of approx. 45 relative to the surface of the carrier substrate facing the installation space, in such a way that light radiated in a horizontal direction onto the light-reflecting surface can be radiated out in the vertical direction through the opening and the cover substrate, and vice versa.

A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed on the substrate. The metal layer is disposed on the transistor and electrically connected to the transistor, wherein a first distance is between the upper surface of the metal layer and the substrate in a direction perpendicular to the substrate. The light-emitting diode is disposed on the metal layer, wherein the light-emitting diode includes a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction above, a second distance is between the first surface and the second surface, wherein the ratio of the second distance to the first distance is greater than or equal to 0.25 and less than or equal to 6.