The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.

A manufacturing method of a photoelectric conversion panel includes forming a short ring, forming a plurality of data lines connected to a TFT and the short ring, forming a first conductive portion of a bias line connected to the photodiode in an upper layer above the photodiode, electrically blocking the short ring and the TFT from each other by cutting the plurality of data lines after the forming of the first conductive portion, and forming an inorganic insulating film in a blocking portion created by the plurality of data lines being cut.

There is provided a pixel circuit capable of outputting time difference data or image data, and including a first temporal circuit and a second temporal circuit. The first temporal circuit is used to store detected light energy of a first interval and a second interval as the time difference data. The second temporal circuit is used to store detected light energy of the second interval as the image data. The pixel circuit is used to output a pulse width signal corresponding to the time difference data or the image data in different operating modes.

A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like.

A time of flight sensor includes at least one demodulation pixel. Each demodulation pixel includes a semiconductor substrate; a charge generation region in the semiconductor substrate, the charge generation region having a lateral extent, the charge generation region being configured to convert light into charge carriers; a light directing element in the charge generation region of the semiconductor substrate, the light directing element being configured to direct light through at least a portion of the lateral extent of the charge generation region; a collection region in the semiconductor substrate, the collection region being configured to collect the charge carriers generated in at least a portion of the lateral extent of the charge generation region, and a readout component in electrical communication with the collection region, the readout component being operable to control an electrical coupling between the charge generation region and the collection region.

A circuit substrate to be laminated on another substrate includes a plurality of signal lines, a plurality of input portions respectively connected to the plurality of signal lines, and each configured to receive a signal from an outside of the circuit substrate, a plurality of signal processing circuits respectively connected to the plurality of input portions via the plurality of signal lines, and a plurality of transistors configured to supply a predetermined voltage to the plurality of signal lines in a state where no signal is input to the plurality of input portions from the outside. A part of the plurality of transistors is connected to a first control line, and another part of the plurality of transistors is connected to a second control line different from the first control line.

An array substrate, a display panel, and an electronic device are provided. The array substrate includes a substrate, a first conductive layer including a first connection part, a fourth insulating layer disposed on the first conductive layer and provided with a second via, and a second conductive layer disposed on the fourth insulating layer and in the second via. The second conductive layer includes a second electrode, and the second electrode is connected to the first connection part through the second via.

An imaging device includes a first pixel and a second pixel each provided with a photoelectric converter that converts light into electric charges and a first transistor connected to the photoelectric converter, first wiring connected to one of a source and a drain of the first transistor of the first pixel, second wiring connected to one of a source and a drain of the first transistor of the second pixel, a first voltage line to which a first voltage is applied, and a first amplification circuit that is connected to the first voltage line, amplifies the first voltage, and outputs the amplified first voltage to the first wiring and the second wiring.

A fingerprint sensor includes: a thin film transistor disposed on a substrate; a first insulating layer disposed on the thin film transistor; a first sensing electrode disposed on the first insulating layer and connected to the thin film transistor; a second insulating layer disposed on the first sensing electrode and including an opening exposing the first sensing electrode; a sensing semiconductor layer disposed in the opening of the second insulating layer and on the first sensing electrode, and including an N-type semiconductor layer, an I-type semiconductor layer, and a P-type semiconductor layer; and a second sensing electrode disposed on the sensing semiconductor layer. An upper surface of the sensing semiconductor layer and an upper surface of the second insulating layer are coplanar.