A micro-LED structure includes a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from an edge of the second type conductive layer. An edge of the light emitting layer is aligned with an edge of the first type conductive layer. The edge of the first type conductive layer extends along the horizontal level away from the edge of the second type conductive layer.

An embodiment provides a semiconductor device package and a light emitting device comprising same, the semiconductor device package comprising: a body including a first cavity; and a semiconductor device disposed within the first cavity, wherein: the first cavity includes a first surface inclined such that the area of the cavity gradually increases as going away from the semiconductor device, and a plurality of second surfaces perpendicular to the upper surface of the semiconductor device; the body includes a first outer surface and a third outer surface that are opposite to each other, a second outer surface and a fourth surface that are opposite to each other, a first corner portion disposed in a region where the first and second outer surfaces meet each other, a second corner portion disposed in a region where the second and third outer surfaces meet each other, a third corner portion disposed in a region where the third and fourth outer surfaces meet each other, and a fourth corner portion disposed in a region where the fourth and first outer surfaces meet each other; and the plurality of second surfaces are disposed between the first and second corner portions, between the second and third corner portions, between the third and fourth corner portions, and between the fourth and first corner portions, respectively.

A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; an interlayer insulating film over the color filter; and a white-emissive light-emitting element formed over the interlayer insulating film and being electrically connected to the thin film transistor.

A lighting device disclosed in an embodiment of the invention includes: a lighting module emitting a first light and a second light; and a lens disposed on the lighting module to block light of a shorter wavelength among the first light and the second light and transmit light of a longer wavelength, wherein the lighting module includes: a substrate; a plurality of light emitting devices disposed on the substrate and emitting a first light; a resin layer covering the plurality of light emitting devices; and a phosphor layer disposed on the resin layer to convert the first light into second light, wherein the first and second light travel through the phosphor layer in the lens direction, and the second light may pass through the lens.

A light emitting device includes: a light emitting unit; an optical member configured to transmit or pass light emitted by the light emitting unit, the optical member including: a first region configured to transmit or pass light having a first chromaticity; and a second region configured to transmit or pass light having a second chromaticity different from the first chromaticity; and a movable member configured to move to change a distance between the light emitting unit and the optical member along an optical axis of the light emitting unit.

A display device includes: a plurality of light emitting elements on a first substrate; a second substrate facing the first substrate; a partition wall on one surface of the second substrate facing the first substrate, and including a plurality of openings; a plurality of color filters in the plurality of openings; wavelength conversion layers on the plurality of color filters, respectively, and to convert wavelengths of light emitted from the plurality of light emitting elements; and an adhesive layer adhering the first substrate and the second substrate to each other. The partition wall includes a silicon single crystal.

An emitter and a method for emitting light are described. The emitter has a substrate with a substrate surface and at least one LED element arranged on the substrate surface for generating the light to be emitted. An active cooling unit for cooling the at least one LED element has at least one cooling channel. The at least one cooling channel is arranged on the substrate surface in a beam path of at least one portion of the light to be emitted, which can be generated by means of the at least one LED element, for redirecting the light to be emitted.

A light-emitting substrate includes a transparent substrate; a first metal light-shielding layer, a wiring layer and light-emitting devices. The first metal light-shielding layer is disposed on the transparent substrate. The wiring layer is disposed on a side of the first metal light-shielding layer away from the transparent substrate, and the wiring layer includes circuit traces and pads. Orthographic projections of the circuit traces and the pads on the transparent substrate are all located within an orthographic projection of the first metal light-shielding layer on the transparent substrate. The light-emitting devices are disposed on a side of the wiring layer away from the transparent substrate, and electrically connected to some of the pads; and orthographic projections of the light-emitting devices on the transparent substrate are located within the orthographic projection of the first metal light-shielding layer on the transparent substrate.

Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride or an indium tin oxide; and the electrode layer is located on the second-type layer.

A unit pixel includes a transparent substrate, a plurality of light emitting devices arranged on the transparent substrate, and an optical layer disposed between the light emitting devices and the transparent substrate and transmitting light emitted from the light emitting devices. The transparent substrate has a concavo-convex pattern on a surface facing the light emitting devices.