Various forms of Mg.sub.xGe.sub.1xO.sub.2x are disclosed, where an epitaxial layer comprises single crystal Mg.sub.xGe.sub.1xO.sub.2x, with x having a value of 0x<1, wherein the single crystal Mg.sub.xGe.sub.1xO.sub.2x has a crystal symmetry compatible with a substrate or with an underlying layer on which the single crystal Mg.sub.xGe.sub.1xO.sub.2x is grown. Semiconductor structures and devices comprising the epitaxial layer of Mg.sub.xGe.sub.1xO.sub.2x are disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices.

The present disclosure provides a light-emitting substrate. The light-emitting substrate includes a backboard, a light-emitting layer and a plurality of first optical bodies. The light-emitting layer is located on a side of the backboard; the light-emitting layer includes a plurality of light-emitting units, and the plurality of light-emitting units are arranged in an array. Each first optical body includes a first optical portion and a second optical portion; a gap between two adjacent light-emitting units is filled with the first optical portion, and the second optical portion is located on a side of the light-emitting layer away from the backboard, and is connected to the first optical portion. The second optical portion includes a first surface extending outwards from an edge of the first optical portion.

The invention relates to various aspects of a -LED or a -LED array for augmented reality or lighting applications, in particular in the automotive field. The -LED is characterized by particularly small dimensions in the range of a few m.

The invention relates to various aspects of a -LED or a -LED array for augmented reality or lighting applications, in particular in the automotive field. The -LED is characterized by particularly small dimensions in the range of a few m.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

The invention relates to various aspects of a -LED or a -LED array for augmented reality or lighting applications, in particular in the automotive field. The -LED is characterized by particularly small dimensions in the range of a few m.

The invention relates to various aspects of a -LED or a -LED array for augmented reality or lighting applications, in particular in the automotive field. The -LED is characterized by particularly small dimensions in the range of a few m.

Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.