An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

There are disclosed herein various implementations of a semiconductor component including one or more aluminum silicon nitride layers. The semiconductor component includes a substrate, a group III-V intermediate body situated over the substrate, a group III-V buffer layer situated over the group III-V intermediate body, and a group III-V device fabricated over the group III-V buffer layer. The group III-V intermediate body includes the one or more aluminum silicon nitride layers.

A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of Al.sub.xIn.sub.yGa.sub.1-x-yN (0<x<1, 0<y<1, 0<x+y<1) while the well layer is made of In.sub.zGa.sub.1-zN (0<z<1). Thereby quaternary composition is adjusted for lattice match between the barrier layers and the well layers. Thus crystal defect caused by lattice mismatch is improved.

Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.

The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission efficiency. The Group III nitride semiconductor light-emitting device includes a base layer, an n-type superlattice layer, a light-emitting layer, and a p-type cladding layer, each of the layers being made of Group III nitride semiconductor. An electron injection adjusting layer comprising a single Al.sub.xGa.sub.1-xN (0<x<1) layer and having a thickness of 5 to 30 is formed in the base layer. The n-type superlattice layer is a superlattice layer having a periodic structure of an In.sub.yGa.sub.1-yN (0<y<1) layer, an i-GaN layer, and an n-GaN layer. The electron injection adjusting layer has a thickness of 5 to 30 and an Al composition ratio of 0.15 to 0.5.

A semiconductor light emitting device including an N-type semiconductor layer, a P-type semiconductor layer, a light emitting layer and a strain relief layer is provided. The light emitting layer is disposed between the N-type semiconductor layer and the P-type semiconductor layer, and the light emitting layer is a multiple quantum well structure. The strain relief layer is disposed between the light emitting layer and the N-type semiconductor layer, and is made of In.sub.xGa.sub.1-xN, where 0<x<1. The difference between any two values of x corresponded to any two positions in the strain relief layer is greater than 0.01 and less than 0.01. The thickness of the strain relief layer is larger than the thickness of each well layer of the multiple quantum well structure.

This invention relates generally to the field of quasicrystalline structures. In preferred embodiments, the stopgap structure is more spherically symmetric than periodic structures facilitating the formation of stopgaps in nearly all directions because of higher rotational symmetries. More particularly, the invention relates to the use of quasicrystalline structures for optical, mechanical, electrical and magnetic purposes. In some embodiments, the invention relates to manipulating, controlling, modulating and directing waves including electromagnetic, sound, spin, and surface waves, for pre-selected range of wavelengths propagating in multiple directions.

A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.

A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).