A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.

The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.

An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order. The substrate includes a first electrode, a second electrode and an insulating part. The insulating part is formed between the first electrode and the second electrode. The LED die further includes a second insulating layer and a metal layer which are formed around the pre-growth layer. The present disclosure includes a method for manufacturing the LED die.

Described herein are microfluidic devices and methods of detecting an analyte in a sample that includes flowing the sample though a microfluidic device, wherein the presence of the analyte is detected directly from the microfluidic device without the use of an external detector at an outlet of the microfluidic device. In a more specific aspect, detection is performed by incorporating functional nanopillars, such as detector nanopillars and/or light source nanopillars, into a microchannel of a microfluidic device.

A light emitting diode (LED) includes a semiconductor material with an active region. The active region is disposed in the semiconductor material to produce light in response to a voltage applied across the semiconductor material. The active region includes a wide bandgap region disposed to inhibit charge transfer from a central region of the LED to the lateral edges of the LED. The active region also includes a narrow bandgap region disposed in the central region with the wide bandgap region disposed about the narrow bandgap region, and the narrow bandgap region has a narrower bandgap than the wide bandgap region.

The present invention provides a Group III nitride semiconductor light-emitting device in which electrons and holes are suppressed from being captured by threading dislocation, and a production method therefor. The light-emitting device comprises an n-type contact layer, an n-side electrostatic breakdown preventing layer, an n-side superlattice layer, a light-emitting layer, a p-type cladding layer, a p-type contact layer, a transparent electrode, an n-electrode, and a p-electrode. The light-emitting device has a plurality of pits extending from the n-type semiconductor layer to the p-type semiconductor layer. The n-side electrostatic breakdown preventing layer has an n-type AlGaN layer. The n-type AlGaN layer includes starting points of the pits.

A micro-LED structure includes a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level away from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer, such that an edge of the light emitting layer does not contact the top edge of the first type conductive layer and the bottom edge of the second type conductive layer. A profile of the first type conductive layer perpendicularly projected on a bottom surface of the second type conductive layer is surrounded by the bottom edge of the second type conductive layer.

A light emitting element includes: a conductive member having a first through hole; a reflecting layer disposed in the first through hole; an insulation layer disposed on the conductive member and the reflecting layer and having second through holes positioned so as not to overlap the first through hole in a plan view; a semiconductor structure including a p-type semiconductor layer disposed on the insulation layer, an emission layer disposed on the p-type semiconductor layer, and an n-type semiconductor layer disposed on the emission layer in part; an n-electrode disposed on and electrically connected to the n-type semiconductor layer; and p-electrode electrically connected to the conductive member. A reflectance of the reflecting layer for a peak wavelength of light emitted from the emission layer is higher than the reflectance of the conductive member for the peak wavelength of the light emitted from the emission layer.