A light-emitting device includes doped layer arranged on a substrate. The doped layer is n-doped or p-doped. A multiple quantum well is arranged on the doped layer and includes a plurality of adjacent pairs of quantum wells and quantum barriers. An electron blocking layer is arranged on the multiple quantum well. The doped layer, the electron blocking layer, the quantum wells, and all of the quantum barriers except for the last quantum barrier include a first III-nitride alloy. The last quantum barrier includes a second III-nitride alloy that is different from the first III-nitride alloy. The second III-nitride alloy has a bandgap larger than a bandgap of the last quantum well and smaller than a bandgap of the electron blocking layer. An interface between the last quantum barrier and the electron blocking layer exhibits a polarization difference between 0 and 0.012 C/m.sup.2.

The present disclosure discloses a display substrate, including a substrate, and a driver circuit, an insulation layer and a bonding electrode sequentially superposed on the substrate. The bonding electrode is configured to be connected to an anode and a cathode of a micro inorganic light-emitting diode chip to be bonded. The display substrate further includes an elastic layer sandwiched between the bonding electrode and the insulation layer, the elastic layer having an orthographic projection on the substrate covering at least an orthographic projection of the bonding electrode on the substrate. The present disclosure provides a display panel, including the above display substrate, and further including a micro inorganic light-emitting diode chip having an anode and a cathode thereof connected to the bonding electrode on the display substrate.

A semiconductor nanoparticle aggregate that is an aggregate of core/shell type semiconductor nanoparticles including a core including In and P and a shell having one or more layers, in which a peak wavelength of an emission spectrum of the semiconductor nanoparticle aggregate is from 605 nm to 655 nm and a full width at half maximum of the emission spectrum is 43 nm or less. For each semiconductor nanoparticle, (1) an average value of a full width at half maximum of an emission spectrum is 28 nm or less, (2) a standard deviation of a peak wavelength of the emission spectrum is 10 nm or more and 30 nm or less, and (3) a standard deviation of the full width at half maximum of the emission spectrum is 12 nm or less.

The invention pertains to the field of nanotechnology. The invention provides highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnSe.sub.1-xTe.sub.x core and ZnS and/or ZnSe shell layers. The nanostructures comprising a ZnSe.sub.1-xTe.sub.x core and ZnS and/or ZnSe shell layers display a low full width at half-maximum and a high quantum yield. The invention also provides methods of producing the nanostructures.

A light emitting device comprises a light emitting element having a light emission peak wavelength in a range of 400 nm or more and 490 nm or less and a first fluorescent material having a light emission peak wavelength in a range of 570 nm or more and 680 nm or less, and emits light having a correlated color temperature being 1,950 K or less, an average color rendering index Ra being 70 or more, a full width at half maximum of a light emission peak having the maximum light emission intensity being 110 nm or less, and a ratio B/L of an effective radiance B to a luminance L being 0.151 or less, wherein the luminance of light emitted by the light emitting device in a range of 300 nm or more and 800 nm or less when B and L is as defined in the disclosure.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

A color conversion panel includes light blocking members spaced apart from each other on a substrate; and a first color conversion layer, a second color conversion layer, and a transmission layer respectively disposed between the light blocking members, wherein the transmission layer includes first quantum dots, and the first quantum dots convert incident light into light having a wavelength in a range of about 480 nm to about 530 nm.

Provided is a light-emitting device, a lighting appliance, and a street light that emit light with minimal negative effects on the behavior of sea turtles and which makes irradiated objects easily visible to humans. The light-emitting device includes a light-emitting element having an emission peak wavelength within a range from 400 nm to 490 nm; and a first phosphor having an emission peak wavelength within a range from 570 nm to 680 nm, wherein the light-emitting device, lighting appliance, and street light emit light that has a correlated color temperature of 1950 K or less, an average color rendering index Ra of 40 or greater, a full width at half maximum of an emission spectrum indicating a maximum emission intensity in an emission spectrum of the light-emitting device of 110 nm or less, and a sea turtle light attraction index T derived from Equation (1) of 0.416 or less.

An alternating electric field-driven gallium nitride (GaN)-based nano-light-emitting diode (nanoLED) structure with an electric field enhancement effect is provided. The GaN-based nanoLED structure forms a nanopillar structure that runs through an indium tin oxide (ITO) layer, a p-type GaN layer, a multiple quantum well (MQW) active layer and an n-type GaN layer and reaches a GaN buffer layer; and the nanopillar structure has a cross-sectional area that is smallest at the MQW active layer and gradually increases towards two ends of a nanopillar, forming a pillar structure with a thin middle and two thick ends. The shape of the GaN-based nanopillar improves the electric field strength within the QW layer in the alternating electric field environment and increases the current density in the QW region of the nanopillar structure under current driving, forming strong electric field gain and current gain, thereby improving the luminous efficiency of the device.

A full spectrum light emitting device includes photoluminescence materials which generate light with a peak emission wavelength in a range 490 nm to 680 nm (green to red) and a broadband solid-state excitation source operable to generate broadband blue excitation light with a dominant wavelength in a range from 420 nm to 470 nm, where the broadband blue excitation light includes at least two different blue light emissions in a wavelength range 420 nm to 480 nm.