A full spectrum light emitting device includes photoluminescence materials which generate light with a peak emission wavelength in a range 490 nm to 680 nm (green to red) and a broadband solid-state excitation source operable to generate broadband blue excitation light with a dominant wavelength in a range from 420 nm to 470 nm, where the broadband blue excitation light includes at least two different blue light emissions in a wavelength range 420 nm to 480 nm.

A light-emitting device includes: a light-emitting element configured to emit first light; a light-transmissive member covering an upper surface of the light-emitting element and including a wavelength conversion material configured to absorb a portion of the first light and emit second light; a light-scattering member disposed on the light-transmissive member, including a light-scattering material, and having a higher reflectance at a peak wavelength of the first light than at a peak wavelength of the second light; and a light-adjustment member located in or on the light-scattering member and having either (i) a higher absorptance at the peak wavelength of the second light than at the peak wavelength of the first light, or (ii) a higher reflectance at the peak wavelength of the second light than at the peak wavelength of the first light. A lateral surface of the light-transmissive member is exposed from the light-scattering member and the light-adjustment member.

A color film substrate, a fabrication method therefor, and a display device. The color film substrate comprises a base substrate (1); a black matrix (2) is located on one side of the base substrate (1), the black matrix (2) having a plurality of pixel openings (21); a quantum dot color film layer (31, 32, 33) is located in the pixel openings (21) and comprises an ultraviolet light-curable quantum dot material; and a light conversion structure (4), which is located between a side wall of the black matrix (2) and a side wall of the quantum dot color film layer (31, 32, 33). When a quantum dot solution is UV cured, the light conversion structure (4) may convert ultraviolet light of 395 nm into ultraviolet light that has a shorter wavelength and higher energy. Since the light conversion structure (4) is arranged between the side wall of the black matrix (2) and the side wall of the quantum dot color film layer (31, 32, 33), the ultraviolet light that has a shorter wavelength and higher energy may be emitted from a side edge and irradiated to the quantum dot color film layer (31, 32, 33), which solves the problem of uneven UV curing of the quantum dot color film layer (31, 32, 33), thereby improving the light-emitting performance of the display device.

In an embodiment a radiation emitting device includes a semiconductor chip configured to emit electromagnetic radiation of a first wavelength range from a radiation exit surface and a potting comprising a matrix material and a plurality of nanoparticles, wherein a concentration of the nanoparticles in the matrix material decreases starting from the radiation exit surface of the semiconductor chip so that a refractive index of the potting decreases starting from the radiation exit surface of the semiconductor chip, and wherein the nanoparticles are coated with a shell.

A light-emitting module is provided. The light-emitting module includes a circuit substrate and a first light-emitting element disposed on the circuit substrate. The light-emitting module also includes an optical pattern disposed on the circuit substrate and adjacent to the first light-emitting element. The light-emitting module further includes a lens covering the first light-emitting element and the optical pattern.

A light emitting device includes a light emitting diode chip, a light transmitting member, a white barrier member, and a conductive adhesive member. The light emitting diode chip has a bump pad formed on the lower surface thereof. The light transmitting member covers the side surfaces and the upper surface of the light emitting diode chip, and the upper surface of the light transmitting member has a rectangular shape having long sides and short sides. The conductive adhesive member is formed to extend through the white barrier member from the bottom of the light emitting diode chip. The upper surface of the conductive adhesive member is connected to the bump pad of the light emitting diode chip, and the lower surface of the conductive adhesive member is exposed at the lower surface of the white barrier member.

The present invention provides a light emitting apparatus comprising a three-color light emitting device unit including at least three light emitting diode (LED) chips for respectively emitting red, green and blue light; a white light emitting device unit including at least one blue LED chip with a fluorescent substance formed thereon; and a substrate provided with a first electrode connected in common to ends of the LED chips and second electrodes formed to correspond respectively to the LED chips. Further, the present invention provides a light emitting apparatus comprising a plurality of LED chips; a substrate provided with a first electrode connected in common to ends of the plurality of LED chips and second electrodes formed to correspond respectively to the plurality of LED chips; an upper package formed on the substrate to surround the plurality of LED chips and to have a partition crossing the first electrode at the center of the upper package; and a molding member that encapsulates the plurality of LED chips and is divided by the partition of the upper package.

This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.

In at least one embodiment, the method is designed for producing a light-emitting diode display (1). The method comprises the following steps: A) providing a growth substrate (2); B) applying a buffer layer (4) directly or indirectly onto a substrate surface (20); C) producing a plurality of separate growth points (45) on or at the buffer layer (4); D) producing individual radiation-active islands (5), originating from the growth points (45), wherein the islands (5) each comprise an inorganic semiconductor layer sequence (50) with at least one active zone (55) and have a mean diameter, when viewed from above onto the substrate surface (20), between 50 nm and 20 m inclusive; and E) connecting the islands (5) to transistors (6) for electrically controlling the islands (5).

Provided is an LED production method that can produce a great number of high-quality LEDs at low production cost. A binder-rich layer is formed on LEDs to increase the adhesiveness between the LEDs and a substrate; a phosphor layer or phosphor-rich layer is formed over the layer with a mask put on the layer; and the phosphor or a mixture of the phosphor and binder on the mask is recovered and reused.