Provided is a light-emitting device with quantum dots that has a small in-plane variation in luminescence intensity. A light-emitting device (1) includes a light-emitting part (11), a cell (10), a light source (12), and an incident light scatting part. The light-emitting part (11) contains quantum dots. The cell (10) encapsulates the light-emitting part (11). The light source (12) emits light at a wavelength exciting the quantum dots to the light-emitting part (11). The incident light scatting part is disposed between the light source (12) and the light-emitting part (11). The incident light scatting part scatters light incident on the light-emitting part (11).

A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.

The present disclosure provides systems for generating tunable white light. The systems include a plurality of LED strings that generate light with color points that fall within blue, yellow/green, red, and cyan color ranges, with each LED string being driven with a separately controllable drive current in order to tune the generated light output.

A light emitting diode package includes a light emitting diode which emits a first light having a first color; a body member defining a planar part thereof on which the light emitting diode is mounted, and a side part thereof which is extended upward from the planar part, the planar and side parts defining an inner cavity in which the light emitting diode is disposed; and a filling member which fills the inner cavity and includes a base part in which a plurality of first phosphors is dispersed, the plurality of first phosphors absorbing a portion of the first light and generating a second light having a second color different from the first color. The body member which defines the planar and side parts thereof has a third color different color from the second color, and the body member having the third color absorbs light having the second color.

A method of making an LED device and an LED device using a high-silica, fully-sintered glass substrate is provided. The high-silica substrate is at least 99% silica and is thin, such as less than 200 m in thickness. A phosphor containing layer is deposited on to the substrate and is laser sintered on the substrate such that a portion of the sintered phosphor layer embeds in the material of the substrate.

A method of manufacturing a light emitting device includes: mounting at least one light emitting element on a support member with a first surface of the light emitting element facing upward; applying an adhesive to the first surface of the light emitting element by holding the support member and dipping the first surface of the light emitting element in the adhesive; and disposing a light-transmissive member on the first surface of the light emitting element via the adhesive.

A light-emitting structure includes a semiconductor light-emitting element, a first connection point and a reflective element. The semiconductor light-emitting element includes a bottom surface, a top surface opposite to the bottom surface, and a side surface arranged between the bottom surface and the top surface. The first connection point is arranged on the bottom surface. The reflective element includes a first portion arranged right beneath the bottom surface, and a second portion not overlapping the bottom surface and uplifted from a lower elevation lower than the bottom surface to a higher elevation substantially equal to that of the top surface along a curved path.

In one embodiment, the transparent growth substrate of an LED die is formed to have light scattering areas, such as voids formed by a laser. In another embodiment, the growth substrate is removed and replaced by another substrate that is formed with light scattering areas. In one embodiment, the light scattering areas are formed over the light absorbing areas of the LED die, to reduce the amount of incident light on those absorbing areas, and over the sides of the substrate to reduce light guiding. The replacement substrate may be formed to include reflective particles in selected areas. A 3D structure may be formed by stacking substrate layers containing the reflective areas. The substrate may be a transparent substrate or a phosphor tile that is affixed to the top of the LED.

A light emitting diode (LED) device and packaging for same is disclosed. In some aspects, the LED is manufactured using a vertical configuration including a plurality of layers. Certain layers act to promote mechanical, electrical, thermal, or optical characteristics of the device. The device avoids design problems, including manufacturing complexities, costs and heat dissipation problems found in conventional LED devices. Some embodiments include a plurality of optically permissive layers, including an optically permissive cover substrate or wafer stacked over a semiconductor LED and positioned using one or more alignment markers.

A light emitting apparatus is disclosed. The light emitting apparatus includes a light-transmissive substrate having a top surface and a bottom surface, at least one semiconductor light emitting device disposed on the top surface of the light-transmissive substrate, a reflective part disposed over the semiconductor light emitting device to reflect light from the semiconductor light emitting device toward the light-transmissive substrate, and a first wavelength converter disposed between the light-transmissive substrate and the reflective part.