A photon counting detector is provided for electrometric waves having a wide wavelength range, such as X-rays, gamma rays, and excited weak fluorescence, by use of a common detecting structure. The detector includes an optical connecting part opposed to an emission surface of a columnar-body array and can adjust a spreading range of light emitted from an emission end face of each of a plurality of columnar bodies. The detector also includes a group of APD (avalanche photodiode) clusters opposed to the emission surface via the optical connecting part. In the group of APD clusters, NN (N is a positive integer of 2 or more) APDs each having a light receiving face are arranged two-dimensionally and the output signals from the NN APDs are combined by a wired logical addition circuit so as to form an APD cluster serving as one pixel. A plurality of such clusters are arranged two-dimensionally.

A solid state photomultiplier includes at least one microcell configured to generate an initial analog signal when exposed to optical photons. The solid state photomultiplier further includes a quench circuit electrically coupled with the at least one microcell. The quench circuit includes at least one quench resistor configured to exhibit a substantially constant temperature coefficient of resistance over a selected temperature range.

There is provided an image sensor including: a plurality of first electrodes respectively formed within a plurality of pixel areas, the pixel areas being formed on a substrate; a protection layer formed on an upper surface of the substrate and including a plurality of contact holes respectively exposing the first electrodes of the pixel areas; a plurality of auxiliary electrodes respectively contacting with the first electrodes through the contact holes and extending to an upper surface of the protection layer of the pixel area; a photoconductive layer formed on both the first electrodes and on the auxiliary electrodes; and a second electrode formed on the photo conductive layer.

A system and method for a multi-sensor pixel architecture for use in a digital imaging system is described. The system includes at least one semiconducting layer for absorbing radiation incident on opposites of the at least one semiconducting layer along with a set of electrodes on one side of the semiconducting layer for transmitting a signal associated with the radiation absorbed by the semiconducting layer.

A semiconductor detector for detecting radiation comprises a first semiconductor part in which an electron and a hole are generated by incident radiation; a signal output electrode outputting a signal base on the electron or the hole; and a gettering part gettering impurities in the first semiconductor part. In addition, the semiconductor detector further comprises a second semiconductor part doped with a type of dopant impurities and having dopant impurity concentration higher than that of the first semiconductor part. The second semiconductor part is in contact with the first semiconductor part. The gettering part is in contact with the second semiconductor part and not in contact with the first semiconductor part.

A semiconductor detector includes a plate-shaped semiconductor part, a signal output electrode for outputting a signal provided at one surface of the semiconductor part, a plurality of curved electrodes provided at the one surface of the semiconductor part and which have distances from the signal output electrode that are different from each other, and an arc-shaped collection electrode for collecting an electric charge generated at the semiconductor part. The plurality of curved electrodes are applied with voltage to generate in the semiconductor part a potential gradient in which a potential varies toward the signal output electrode. The collection electrode is located at a part of the semiconductor part between an adjacent pair of curved electrodes. The collection electrode is connected to a curved electrode located a distance from the signal output electrode shorter than a distance between the collection electrode and the signal output electrode among the curved electrodes.

The structure and methods of fabricating a high efficiency compact solid state neutron detector based on III-Nitride semiconductor structures deposited on a substrate. The operation of the device is based on absorption of neutrons, which results in generation of free carriers.

In an embodiment a semiconductor detector includes a doped semiconductor body with a detection region, a front side and a rear side opposite the front side, a first electrical ring electrode and a second electrical ring electrode arranged around a read-out point on the front side, wherein the ring electrodes are configured to generate an electric field profile in the semiconductor body to guide free charge carriers to the read-out point, the ring electrodes overlapping at least partially with the detection region, as seen in plan view of the front side, a passivation layer arranged on the front side in a direction parallel to the front side between the first ring electrode and the second ring electrode and a first doped layer extending along the front side and electrically conductively connecting the first ring electrode to the second ring electrode without interruptions, wherein the first doped layer and a rest of the semiconductor body are oppositely doped to each other, and wherein a specific resistance of the first doped layer is between 1 cm and 1000 cm, inclusive.

In an embodiment a method includes providing a semiconductor body with a first main side and an opposite, second main side, wherein the semiconductor body is configured to detect radiation with an energy of at least 10 eV, and wherein the first main side includes a radiation entrance area for the radiation, generating a bottom insulation layer located directly at the first main side, the bottom insulation layer comprising a first electrically insulating material, applying a sacrificial layer directly on the bottom insulation layer across the entrance area so that throughout the entrance area the bottom insulation layer is between the semiconductor body and the sacrificial layer, applying a reinforcing layer over the bottom insulation layer so that the sacrificial layer is sandwiched between the bottom insulation layer and the reinforcing layer, the reinforcing layer comprising a second electrically insulating material and exposing the bottom insulation layer from the sacrificial layer and from the reinforcing layer in the entrance area.

A detector may be provided with a sensing element or an array of sensing elements, each of the sensing elements may have a corresponding gain element. A substrate may be provided having a sensing element and a gain element integrated together. The gain element may include a section in which, along a direction perpendicular to an incidence direction of an electron beam, a region of first conductivity is provided adjacent to a region of second conductivity, and a region of third conductivity may be provided adjacent to the region of second conductivity. The sensing element may include a section in which, along the incidence direction, a region of fourth conductivity is provided adjacent to an intrinsic region of the substrate, and the region of second conductivity may be provided adjacent to the intrinsic region.