The present disclosure describes a detector used in critical dimension scanning electron microscopes (CD-SEM) and review SEM systems. In one embodiment, the detector includes a semiconductor structure having a p-n junction and a hole through which a scanning beam is passed to a target. The detector also includes a top electrode for the p-n junction (e.g., anode or cathode) that provides an active area for detecting electrons or electromagnetic radiation (e.g., backscattering from the target). The top electrode has a doped layer and can also have a buried portion beneath the doped layer to reduce a series resistance of the top electrode without changing the active area. In another embodiment, an isolation structure can be formed in the semiconductor structure near sidewalls of the hole to electrically isolate the active area from the sidewalls. A method for forming the buried portion of the top electrode is also described.

A charged particle beam system may include a detector. A package for a detector may have a package body that includes two sets of pins, each of the sets of pins including two pins. Each pin of the sets of pins may be configured to be connected to one of two terminals of a sensing element. Pins of different sets may be configured to be connected to a different one of the two terminals of the diode. The sets of pins may be arranged with a symmetry such that magnetic fields generated when current passes through the sets of pins is reduced due to the symmetry.

A charged particle beam system may include a detector. A package for a detector may have a package body that includes two sets of pins, each of the sets of pins including two pins. Each pin of the sets of pins may be configured to be connected to one of two terminals of a sensing element. Pins of different sets may be configured to be connected to a different one of the two terminals of the diode. The sets of pins may be arranged with a symmetry such that magnetic fields generated when current passes through the sets of pins is reduced due to the symmetry.

Infrared imaging sensors and methods for producing same are provided herein. An example infrared imaging sensor includes a substrate, one or more x-ray absorber layers, and a black intermediate layer disposed between the substrate and the one or more x-ray absorber layers. Example substrates include sapphire disks, sapphire windows, diamond substrates, germanium substrates, and silicon substrates.

Infrared imaging sensors and methods for producing same are provided herein. An example infrared imaging sensor includes a substrate, one or more x-ray absorber layers, and a black intermediate layer disposed between the substrate and the one or more x-ray absorber layers. Example substrates include sapphire disks, sapphire windows, diamond substrates, germanium substrates, and silicon substrates.

A diamond-based particle detector includes a diamond substrate that includes a first side and a second side; a first side first doped layer contacting the first side of the diamond substrate; a first metal contact contacting the first side first doped layer, a first side intrinsic diamond layer contacting the first side first doped layer, (i) a second side first doped layer or (ii) a second side intrinsic diamond layer contacting the second side of the diamond substrate; and a second metal contact contacting (i) the second side first doped layer or (ii) the second side intrinsic diamond layer.

A diamond-based particle detector includes a diamond substrate that includes a first side and a second side; a first side first doped layer contacting the first side of the diamond substrate; a first metal contact contacting the first side first doped layer, a first side intrinsic diamond layer contacting the first side first doped layer, (i) a second side first doped layer or (ii) a second side intrinsic diamond layer contacting the second side of the diamond substrate; and a second metal contact contacting (i) the second side first doped layer or (ii) the second side intrinsic diamond layer.