A method for forming semiconductor devices includes forming a highly doped region. A stack of alternating layers is formed on the substrate. The stack is patterned to form nanosheet structures. A dummy gate structure is formed over and between the nanosheet structures. An interlevel dielectric layer is formed. The dummy gate structures are removed. SG regions are blocked, and top sheets are removed from the nanosheet structures along the dummy gate trench. A bottommost sheet is released and forms a channel for a field effect transistor device by etching away the highly doped region under the nanosheet structure and layers in contact with the bottommost sheet. A gate structure is formed in and over the dummy gate trench wherein the bottommost sheet forms a device channel for the EG device.

A method of forming a gate structure for a semiconductor device that includes forming first spacers on the sidewalls of replacement gate structures that are present on a fin structure, wherein an upper surface of the first spacers is offset from an upper surface of the replacement gate structure, and forming at least second spacers on the first spacers and the exposed surfaces of the replacement gate structure. The method may further include substituting the replacement gate structure with a functional gate structure having a first width portion in a first space between adjacent first spacers, and a second width portion having a second width in a second space between adjacent second spacers, wherein the second width is greater than the first width.

Present embodiments provide for a complementary nanowire semiconductor device and fabrication method thereof. The fabrication method comprises providing a substrate, wherein the substrate has a NMOS active region, a PMOS active region and a shallow trench isolation (STI) region; forming a plurality of first hexagonal epitaxial wires on the NMOS active region and the PMOS active region by selective epitaxially growing a germanium (Ge) crystal material; selectively etching the substrate to suspend the pluralities of first hexagonal epitaxial wires on the substrate; forming a plurality of second hexagonal epitaxial wires on the NMOS active region by selective epitaxially growing a III-V semiconductor crystal material surrounding the pluralities of first hexagonal epitaxial wires on the NMOS active region; depositing a dielectric material on the pluralities of first hexagonal epitaxial wires and the pluralities of second hexagonal epitaxial wires, wherein the dielectric material covers the pluralities of first hexagonal epitaxial wires and the pluralities of second hexagonal epitaxial wires; and depositing a conducting material on the dielectric material for forming a gate electrode surrounding the pluralities of first hexagonal epitaxial wires and the pluralities of second hexagonal epitaxial wires, wherein the pluralities of first hexagonal epitaxial wires are a plurality of first nanowires and the pluralities of second hexagonal epitaxial wires are a plurality of second nanowires.

Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a semiconductor device includes an array having at least one first region and at least one second region. The first region includes at least one first device oriented in a first direction. The second region includes at least one second device oriented in a second direction. The second direction is different than the first direction.

Metal quantum dots are incorporated into doped source and drain regions of a MOSFET array to assist in controlling transistor performance by altering the energy gap of the semiconductor crystal. In a first example, the quantum dots are incorporated into ion-doped source and drain regions. In a second example, the quantum dots are incorporated into epitaxially doped source and drain regions.

A method of manufacturing a flash memory cell is provided including forming a plurality of semiconductor fins on a semiconductor substrate, forming floating gates for a sub-set of the plurality of semiconductor fins and forming a first insulating layer between the plurality of semiconductor fins. The first insulating layer is recessed to a height less than the height of the plurality of semiconductor fins and sacrificial gates are formed over the sub-set of the plurality of semiconductor fins. A second insulating layer is formed between the sacrificial gates and, after that, the sacrificial gates are removed. Recesses are formed in the first insulating layer and sense gates and control gates are formed in the recesses for the sub-set of the plurality of semiconductor fins. The first and second insulating layers may be oxide layers.

The present invention provides a method of manufacturing nanowire semiconductor device. In the active region of the PMOS the first nanowire is formed with high hole mobility and in the active region of the NMOS the second nanowire is formed with high electron mobility to achieve the objective of improving the performance of nanowire semiconductor device.

A method for forming semiconductor devices includes forming a highly doped region. A stack of alternating layers is formed on the substrate. The stack is patterned to form nanosheet structures. A dummy gate structure is formed over and between the nanosheet structures. An interlevel dielectric layer is formed. The dummy gate structures are removed. SG regions are blocked, and top sheets are removed from the nanosheet structures along the dummy gate trench. A bottommost sheet is released and forms a channel for a field effect transistor device by etching away the highly doped region under the nanosheet structure and layers in contact with the bottommost sheet. A gate structure is formed in and over the dummy gate trench wherein the bottommost sheet forms a device channel for the EG device.

Provided is a semiconductor device having dual channels including a first portion and a second portion sharing a buried gate pillar. The buried gate pillar extends from a first surface of a substrate toward a second surface opposite to the first surface. The first portion includes the buried gate pillar, a first gate dielectric layer at a first sidewall of the buried gate pillar and a first doped region set aside the first gate dielectric layer. A first channel is provided in the substrate between the first gate dielectric layer and the first doped region set. The second portion includes the buried gate pillar, a second gate dielectric layer at a second sidewall of the buried gate pillar and a second doped region set aside the second gate dielectric layer. A second channel is provided in the substrate between the second gate dielectric layer and the second doped region set.

A method for forming a semiconductor device comprises forming a first buffer layer with a first melting point on a substrate. A second buffer layer is formed on the first buffer layer. The second buffer layer has a second melting point that is greater than the first melting point. Annealing process is performed that increases a temperature of the first buffer layer such that the first buffer layer partially liquefies and causes a strain in the second buffer layer to be substantially reduced.