An electromagnetic radiation detector pixel includes a set of epitaxial layers and a lens. The set of epitaxial layers defines an electromagnetic radiation absorber. The lens is directly bonded to the set of epitaxial layers.

To improve reliability of a solid-state imaging apparatus. A solid-state imaging apparatus includes: a chip; and a transparent member. A solid-state image sensor is formed in the chip. The transparent member is directly joined to the chip via a projecting portion. The projecting portion of the transparent member is formed so as to maintain a gap between the transparent member and an imaging region of the solid-state image sensor of the chip. A protective film may be formed on a semiconductor substrate via an anti-reflection film. A color filter or an on-chip lens may be formed for each pixel in the imaging region of the solid-state image sensor of the chip.

There is provided a structure to improve BSI global shutter efficiency. In a sensor pixel circuit, at least one strong electric field is formed at the position of a floating diffusion region to accordingly have the effect of shielding the floating diffusion region. Or, the semiconductor material from the floating diffusion node toward a light incident direction is removed in the manufacturing process such that a depletion region cannot be formed in this direction. Or, a reflection layer or a photoresist layer is formed in the light incident direction to block the light. In these ways, charges generated by the undesired noises are reduced, and noise charges are difficult to reach the floating diffusion region thereby improving the shutter efficiency.

The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

An imaging device includes a semiconductor substrate and pixels. Each of the pixels includes a first capacitive element including a first electrode provided above the semiconductor substrate, a second electrode provided above the semiconductor substrate, and a dielectric layer located between the first electrode and the second electrode. At least one selected from the group consisting of the first electrode and the second electrode has a first electrical contact point electrically connected to a first electrical element and a second electrical contact point electrically connected to a second electrical element different from the first electrical element. The first capacitive element includes at least one trench portion having a trench shape.

An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, multiple rings of isolation structures may be formed around the SPAD. An outer deep trench isolation structure may include a metal filler such as tungsten and may be configured to absorb light. The outer deep trench isolation structure therefore prevents crosstalk between adjacent SPADs. Additionally, one or more inner deep trench isolation structures may be included. The inner deep trench isolation structures may include a low-index filler to reflect light and keep incident light in the active area of the SPAD.

Image sensors and methods of manufacturing image sensors are provided. One such method includes forming a structure that includes a semiconductor layer extending from a front side to a back side, and a capacitive insulation wall extending through the semiconductor layer. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductor or a semiconductor material. Portions of the semiconductor layer and the region of the conductor or semiconductor material are selectively etched, and the first and second insulating walls have portions protruding outwardly beyond a back side of the semiconductor layer and of the region of the conductor or semiconductor material. A dielectric passivation layer is deposited on the back side of the structure, and portions of the dielectric passivation layer are locally removed on a back side of the protruding portions of the first and second insulating walls.

A solid-state imaging device includes a second image sensor having an organic photoelectric conversion film transmitting a specific light, and a first image sensor which is stacked in layers on a same semiconductor substrate as that of the second image sensor and which receives the specific light having transmitted the second image sensor, in which a pixel for focus detection is provided in the second image sensor or the first image sensor. Therefore, an AF method can be realized independently of a pixel for imaging.

A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.