Embodiments provide a light emitting device package including a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes connected to the first and second conductive semiconductor layers, a first pad connected to the first electrodes in first-first through-holes penetrating the second conductive semiconductor layer and the active layer, and a first insulation layer disposed between the first pad and the second conductive semiconductor layer and between the first pad and the active layer to cover the first electrodes in a first-second through-hole, and a second pad connected to the second electrode through a second through-hole penetrating the first insulation layer and electrically spaced apart from the first pad. The second pad does not overlap the first insulation layer in the first-second through-hole in a thickness direction of the light emitting structure.

A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

A method for manufacturing a light emitting diode (LED) die includes providing an LED die including a substrate, an N type semiconductor layer, an active layer, and a P type semiconductor layer grown on the substrate in sequence. The N type semiconductor layer, the active layer, and the P type semiconductor layer are etched to define a plurality of recesses and a groove. An insulating layer to cover side surfaces of the recesses and the P type semiconductor layer is formed and a portion of the insulating layer is etched to define an opening to expose a top portion of the P type semiconductor layer. A pair of electrodes is formed and the LED die is cut along the groove to obtain an individual LED die.

A light emitting element with a hexagonal planar shape, has: an n-side semiconductor layer; a p-side semiconductor layer provided on the n-side semiconductor layer; a plurality of holes that are provided to an area excluding three corners at mutually diagonal positions of the p-side semiconductor layer in plan view, and expose the n-side semiconductor layer; a first p-electrode provided in contact with the p-side semiconductor layer; second p-electrodes provided to three corners on the first p-electrode; and an n-electrode that is provided on the first p-electrode and is electrically connected to the n-side semiconductor layer through the plurality of holes.

A light-emitting element includes a light transmissive substrate; a first semiconductor stacked body including: a first n-side semiconductor layer, and a first p-side semiconductor layer, the first p-side semiconductor layer having a hole formed therein; a first p-electrode; a first n-electrode having a portion above the first p-electrode, and a portion extending into the hole, the first n-electrode being electrically connected to the first n-side semiconductor layer through the hole; a second semiconductor stacked body including: a second n-side semiconductor layer located around a periphery of the first semiconductor stacked body, and a second p-side semiconductor layer located above the second n-side semiconductor layer and located outside of an inner edge portion of the second n-side semiconductor layer; a second p-electrode; and a second n-electrode having a portion above the second p-electrode, and being electrically connected to the inner edge portion of the second n-side semiconductor layer.

A side-view type light emitting device has a bottom surface thereof as a light emission surface and a first lateral surface thereof as a mounting surface for mounting on a mounting substrate, and includes a semiconductor layered structure including a first semiconductor layer, an active layer and a second semiconductor layer; a first connecting electrode exposed from the first lateral surface and electrically connected to the first semiconductor layer; a first electrode disposed between the first semiconductor layer and the first connecting electrode; a second connecting electrode exposed from the first lateral surface; a metal wire electrically connecting an upper surface of the second semiconductor layer to the second connecting electrode; and a resin layer. In a direction perpendicular to the light emission surface, the active layer does not overlap with the first connecting electrode, and the active layer does not overlap with the second connecting electrode.

A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting element 1 includes a substrate 2, an n-type nitride semiconductor layer 3, a light-emitting layer 4, a p-type nitride semiconductor layer 5, a transparent electrode layer 6 and a reflective electrode layer 7, and the transparent electrode layer 6 has a thickness T satisfying the following expression (1): $\begin{array}{cc}\frac{3}{4n}+0.30\left(\frac{}{4n}\right)T\frac{3}{4n}+0.45\left(\frac{}{4n}\right)& \left(1\right)\end{array}$
wherein is the light-emitting wavelength of the light-emitting element 4, and n is the refractive index of the transparent electrode layer 6.

Solid state lighting (SSL) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.

A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

A light emitting device includes a base body, a light emitting element and a sealing member. The base body includes a base material and a pair of connection terminals on at least a first main surface of the base material. The light emitting element is connected to the connection terminals. The sealing member seals the light emitting element. The sealing member includes a light transmissive member disposed on an upper surface of the light emitting element, and a light shielding member sealing an end surface of the light emitting element and an end surface of the light transmissive member. The base material has a linear expansion coefficient within 10 ppm/ C. of a linear expansion coefficient of the light emitting element.